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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI7960DP-T1-E3 DISTI # SI7960DP-T1-E3TR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI7960DP-T1-E3 DISTI # SI7960DP-T1-E3CT-ND | Vishay Siliconix | MOSFET 2N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI7960DP-T1-E3 DISTI # SI7960DP-T1-E3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI7960DP-T1-GE3 DISTI # SI7960DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI7960DP-T1-GE3 DISTI # SI7960DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI7960DP-T1-GE3 DISTI # SI7960DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI7960DP-T1-E3 DISTI # 57J5759 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 60V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.7A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 | |
| SI7960DP-T1-GE3 DISTI # 26R1947 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 60V, 9.7A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.7A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 | |
| SI7960DP-T1-E3 DISTI # 781-SI7960DP-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI7252DP-T1-GE3 RoHS: Compliant | 0 | |
| SI7960DP-T1-GE3 DISTI # 781-SI7960DP-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI7252DP-T1-GE3 RoHS: Compliant | 0 | |
| SI7960DP-T1-E3 | Vishay Intertechnologies | 43 |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SI7962DP-T1-E3 OMO.#: OMO-SI7962DP-T1-E3 |
MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD |
|
|
Mfr.#: SI7964DP-T1-GE3 OMO.#: OMO-SI7964DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SI7252DP-T1-GE3 |
|
|
Mfr.#: SI7960DP-T1-GE3 OMO.#: OMO-SI7960DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SI7252DP-T1-GE3 |
|
|
Mfr.#: SI7964DP-T1-E3 OMO.#: OMO-SI7964DP-T1-E3 |
MOSFET RECOMMENDED ALT 78-SI7252DP-T1-GE3 |
|
Mfr.#: SI7962DP-T1-GE3 OMO.#: OMO-SI7962DP-T1-GE3-317 |
RF Bipolar Transistors MOSFET 40V 11.1A 3.5W 17mohm @ 10V |
|
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Mfr.#: SI7960DP OMO.#: OMO-SI7960DP-1190 |
신규 및 오리지널 |
|
Mfr.#: SI7960DP-T1-E3 OMO.#: OMO-SI7960DP-T1-E3-VISHAY |
MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
|
|
Mfr.#: SI7960DP-T1-GE3 OMO.#: OMO-SI7960DP-T1-GE3-VISHAY |
MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
|
|
Mfr.#: SI7962 OMO.#: OMO-SI7962-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI7964DP-T1-GE3 OMO.#: OMO-SI7964DP-T1-GE3-VISHAY |
MOSFET 2N-CH 60V 6.1A PPAK SO-8 |