LKK47-06C5

Mfr. #:: LKK47-06C5
제조사:: Littelfuse
설명:: MOSFET 47 Amps 600V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: LKK47-06C5 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: LKK47-06C5 Datasheet LKK47-06C5 Datasheet (P4)
ECAD Model:

제품 속성
속성 값

제조사:: 익시스

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-264-3

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 47 A

Rds On - 드레인 소스 저항:: 45 mOhms

Vgs - 게이트 소스 전압:: 20 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 480 W

구성:: 듀얼

채널 모드:: 상승

상표명:: 쿨모스

포장:: 튜브

시리즈:: LKK47

트랜지스터 유형:: 2 N-Channel

상표:: 익시스

가을 시간:: 10 ns

상품 유형:: MOSFET

상승 시간:: 20 ns

공장 팩 수량:: 25

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 100 ns

일반적인 켜기 지연 시간:: 30 ns

단위 무게:: 0.264555 oz

Tags: LKK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

LKK47-06C5 설명

***ical: Trans MOSFET N-CH 600V 47A 5-Pin(5+Tab) ISOPLUS 264

***i-Key: MOSFET 2N-CH 600V 47A ISOPLUS264

***ure Electronics: Single N-Channel 600 V 40 mOhm 107 nC CoolMOS Power Mosfet - TO-220-3

***ark: Mosfet, N-Ch, 600V, 50A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: Single N-Channel 600 V 40 mOhm 107 nC CoolMOS Power Mosfet - TO-247-3

***ark: Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: Single N-Channel 600 V 40 mOhm 107 nC CoolMOS Power Mosfet - TO-247-3-4

***nell: MOSFET, N-CH, 600V, 50A, TO-247-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***icroelectronics: N-CHANNEL 600V - 0.050 Ohm - 60A Max247 Zener-Protected MDmesh(TM)Power MOSFET

***ical: Trans MOSFET N-CH 600V 60A 3-Pin (3+Tab) Max247 Tube

***ser: Power MOSFET Transistors N-Ch 600 Volt 60 Amp

***ponent Stockers USA: 60 A 600 V 0.055 ohm N-CHANNEL Si POWER MOSFET

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 60A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: IC DUAL PCMCIA PWR SWITCH 30SSOP

***icroelectronics SCT: Power MOSFETs, 600V, 60A, Max247, Tube

***ment14 APAC: MOSFET, N CH, 600V, 60A, MAX247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:560W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:MAX-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:Max-247; Power Dissipation Pd:560W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

***r Electronics: Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247

***nell: MOSFET, N-CH, 600V, 52A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe

***icroelectronics: N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package

***r Electronics: Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247-4

***nell: MOSFET, N-CH, 600V, 52A, 150DEG C, 350W; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 350W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

Market price

부분 #	제조	설명	재고	가격
LKK47-06C5 DISTI # LKK47-06C5-ND	IXYS Corporation	MOSFET 2N-CH 600V 47A ISOPLUS264 RoHS: Compliant Min Qty: 25 Container: Tube	Temporarily Out of Stock	25:$34.8380
LKK47-06C5 DISTI # 747-LKK47-06C5	IXYS Corporation	MOSFET 47 Amps 600V RoHS: Compliant	26	1:$37.2600 5:$35.4000 10:$34.4700 25:$31.6700 50:$30.3200 100:$29.4400 250:$27.0100

LKK47-06C5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes