TK31J60W5,S1VQ

TK31J60W5,S1VQ
Mfr. #:
TK31J60W5,S1VQ
제조사:
Toshiba
설명:
MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TK31J60W5,S1VQ 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31J60W5,S1VQ DatasheetTK31J60W5,S1VQ Datasheet (P4-P6)TK31J60W5,S1VQ Datasheet (P7-P9)TK31J60W5,S1VQ Datasheet (P10)
ECAD Model:
추가 정보:
TK31J60W5,S1VQ 추가 정보
제품 속성
속성 값
제조사:
도시바
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-3PN-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
30.8 A
Rds On - 드레인 소스 저항:
73 mOhms
Vgs th - 게이트 소스 임계 전압:
3.7 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
86 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
230 W
구성:
하나의
채널 모드:
상승
상표명:
DTMOSIV
키:
20 mm
길이:
15.5 mm
시리즈:
TK31J60W5
트랜지스터 유형:
1 N-Channel
너비:
4.5 mm
상표:
도시바
가을 시간:
8.5 ns
상품 유형:
MOSFET
상승 시간:
32 ns
공장 팩 수량:
25
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
165 ns
일반적인 켜기 지연 시간:
70 ns
단위 무게:
0.245577 oz
Tags
TK31J60W5, TK31J, TK31, TK3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-3Pn(Os) Moq=50 Pd=230W F=1Mhz
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
***et
DTMOSIV(WITH FAST DIODE)_600V_88MOHM MAX(VGS=10V)_TO-3P(N)
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
부분 # 제조 설명 재고 가격
TK31J60W5,S1VQ
DISTI # V99:2348_13896177
Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 2500:$4.3250
  • 1000:$4.4540
  • 500:$5.0500
  • 250:$5.5120
  • 100:$5.9740
  • 25:$6.5600
  • 10:$7.1510
  • 1:$7.8660
TK31J60W5,S1VQ
DISTI # TK31J60W5S1VQ-ND
Toshiba America Electronic ComponentsMOSFET N-CH 600V 30.8A TO-3P(N)
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$7.9152
TK31J60W5,S1VQ
DISTI # 31315828
Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 25:$6.5490
  • 10:$7.1380
  • 2:$7.8510
TK31J60W5S1VQ
DISTI # TK31J60W5,S1VQ
Toshiba America Electronic ComponentsTrans MOSFET N 600V 30.8A 3-Pin SC-65 Bag - Rail/Tube (Alt: TK31J60W5,S1VQ)
RoHS: Compliant
Min Qty: 25
Container: Tube
Americas - 0
  • 25:$5.4900
  • 50:$5.0900
  • 100:$4.7900
  • 150:$4.5900
  • 250:$4.4900
TK31J60W5,S1VQ
DISTI # 757-TK31J60W5S1VQ
Toshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
RoHS: Compliant
23
  • 1:$10.1000
  • 10:$9.0800
  • 25:$8.2800
  • 50:$8.0700
  • 100:$7.4700
  • 250:$6.8600
  • 500:$6.2600
  • 1000:$5.0000
TK31J60W5S1VQOToshiba America Electronic Components 60
    TK31J60W5,S1VQToshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
    RoHS: Compliant
    Americas -
      TK31J60W5S1VQToshiba America Electronic ComponentsMOSFET N-CH 30.8A 230W FET 600V
      RoHS: Compliant
      Americas -
        TK31J60W5,S1VQ(O)
        DISTI # C1S751201082516
        Toshiba America Electronic ComponentsMOSFETs55
        • 50:$11.9000
        • 10:$14.2000
        • 5:$14.9000
        TK31J60W5,S1VQ
        DISTI # C1S751200875779
        Toshiba America Electronic ComponentsMOSFETs25
        • 25:$6.5490
        • 10:$7.1380
        • 1:$7.8510
        영상 부분 # 설명
        UCC27531DBVR

        Mfr.#: UCC27531DBVR

        OMO.#: OMO-UCC27531DBVR

        Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Sgl Gate Dvr
        UCC27531DBVR

        Mfr.#: UCC27531DBVR

        OMO.#: OMO-UCC27531DBVR-TEXAS-INSTRUMENTS

        Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Sgl Gate Dv
        유효성
        재고:
        Available
        주문 시:
        3000
        수량 입력:
        TK31J60W5,S1VQ의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$10.10
        US$10.10
        10
        US$9.08
        US$90.80
        25
        US$8.28
        US$207.00
        50
        US$8.07
        US$403.50
        100
        US$7.47
        US$747.00
        250
        US$6.86
        US$1 715.00
        500
        US$6.26
        US$3 130.00
        1000
        US$5.00
        US$5 000.00
        2500
        US$4.78
        US$11 950.00
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