SIS402DN-T1-GE3

Mfr. #:: SIS402DN-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 35A 1212-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIS402DN-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SIS402DN-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

시리즈: SISxxxDN

포장: 릴

부분 별칭: SIJ484DP-T1-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAK-1212-8

기술: 시

채널 수: 1 Channel

구성: 싱글 쿼드 드레인 트리플 소스

트랜지스터형: 1 N-Channel

Pd 전력 손실: 3.8 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 15 ns

상승 시간: 20 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 35 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 6.4 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 25 ns

일반 켜기 지연 시간: 25 ns

순방향 트랜스컨덕턴스-최소: 82 S

채널 모드: 상승

Tags: SIS402DN-T1-G, SIS402DN-T, SIS402, SIS40, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS402DN-T1-GE3 추가 정보

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Market price

부분 #	제조	설명	재고	가격
SIS402DN-T1-GE3 DISTI # V72:2272_07432613	Vishay Intertechnologies	Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant	2900	1000:$0.7690 500:$0.7798 250:$0.8664 100:$0.9627 25:$1.1801 10:$1.1858 1:$1.3435
SIS402DN-T1-GE3 DISTI # SIS402DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1734In Stock	1000:$1.0021 500:$1.2095 100:$1.5550 10:$1.9350 1:$2.1400
SIS402DN-T1-GE3 DISTI # SIS402DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1734In Stock	1000:$1.0021 500:$1.2095 100:$1.5550 10:$1.9350 1:$2.1400
SIS402DN-T1-GE3 DISTI # SIS402DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.9059
SIS402DN-T1-GE3 DISTI # 26703731	Vishay Intertechnologies	Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant	3000	3000:$0.8306
SIS402DN-T1-GE3 DISTI # 30647647	Vishay Intertechnologies	Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant	2900	1000:$0.7690 500:$0.7798 250:$0.8664 100:$0.9627 25:$1.1801 13:$1.1858
SIS402DN-T1-GE3 DISTI # SIS402DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 T/R (Alt: SIS402DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.7179 6000:€0.4899 12000:€0.4219 18000:€0.3889 30000:€0.3619
SIS402DN-T1-GE3 DISTI # SIS402DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 T/R (Alt: SIS402DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIS402DN-T1-GE3 DISTI # SIS402DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS402DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5169 6000:$0.5019 12000:$0.4809 18000:$0.4679 30000:$0.4549
SIS402DN-T1-GE3 DISTI # 781-SIS402DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	3780	1:$1.9000 10:$1.5800 100:$1.2200 500:$1.0700 1000:$0.8850 3000:$0.8240 6000:$0.7940 9000:$0.7930
SIS402DNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIS402DN-T1-GE3 DISTI # 2478940	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 35A POWERPAK, FUL RoHS: Compliant	0	3000:£0.7470
SIS402DN-T1-GE3 DISTI # C1S803601056423	Vishay Intertechnologies	MOSFETs	3000	3000:$0.4580
SIS402DN-T1-GE3 DISTI # 2478940	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 35A POWERPAK, FULL REEL RoHS: Compliant	0	3000:$3.3500 6000:$2.5700 12000:$2.0600
SIS402DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas -	3000:$0.5140 6000:$0.4860 12000:$0.4710 24000:$0.4640

영상	부분 #	설명
	Mfr.#: SIS402DN-T1-GE3 OMO.#: OMO-SIS402DN-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SIS402DN OMO.#: OMO-SIS402DN-1190	신규 및 오리지널
	Mfr.#: SIS402DN-T1-E3 OMO.#: OMO-SIS402DN-T1-E3-1190	신규 및 오리지널
	Mfr.#: SIS402DN-T1-GE3 OMO.#: OMO-SIS402DN-T1-GE3-VISHAY	MOSFET N-CH 30V 35A 1212-8
	Mfr.#: SIS402DN-T1-GE3 QFN8 OMO.#: OMO-SIS402DN-T1-GE3-QFN8-1190	신규 및 오리지널
	Mfr.#: SIS402DN-T1-GE3CT OMO.#: OMO-SIS402DN-T1-GE3CT-1190	신규 및 오리지널

SIS402DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes