SI8499DB-T2-E1

Name: Vishay - SI8499DB-T2-E1
Brand: Vishay
SKU: OMO-2826627
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8499DB-T2-E1
제조사:: Vishay
설명:: IGBT Transistors MOSFET -20V [email protected] 16A P-Ch G-III
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI8499DB-T2-E1 데이터 시트
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추가 정보:: SI8499DB-T2-E1 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

포장: 릴

장착 스타일: SMD/SMT

패키지 케이스: MicroFoot-6

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 P-Channel

Pd 전력 손실: 2.77 W

최대 작동 온도: + 125 C

최소 작동 온도: - 55 C

가을철: 30 ns

상승 시간: 10 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: - 7.8 A

Vds-드레인-소스-고장-전압: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 1.3 V

Rds-On-Drain-Source-Resistance: 32 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 55 nS

Qg-Gate-Charge: 20 nC

순방향 트랜스컨덕턴스-최소: 10 S

Tags: SI849, SI84, SI8

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8499DB-T2-E1 설명

***et Europe: Trans MOSFET P-CH 20V 7.8A 6-Pin Micro Foot T/R

***ure Electronics: 20V 32MOHMS P-CH MICROFOOT PKG TRENCHFET

***nell: MOSFET, P-CH, 20V, 16A, MFOOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MICRO FOOT; No. of Pins:6; MSL:MSL 1 - Unlimited

SI8499DB-T2-E1 추가 정보

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

부분 #	제조	설명	재고	가격
SI8499DB-T2-E1 DISTI # SI8499DB-T2-E1CT-ND	Vishay Siliconix	MOSFET P-CH 20V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	78In Stock	1000:$0.2701 500:$0.3376 100:$0.4558 10:$0.5910 1:$0.6800
SI8499DB-T2-E1 DISTI # SI8499DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	78In Stock	1000:$0.2701 500:$0.3376 100:$0.4558 10:$0.5910 1:$0.6800
SI8499DB-T2-E1 DISTI # SI8499DB-T2-E1TR-ND	Vishay Siliconix	MOSFET P-CH 20V 16A MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2540
SI8499DB-T2-E1 DISTI # SI8499DB-T2-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7.8A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8499DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2159 6000:$0.2099 12000:$0.2009 18000:$0.1959 30000:$0.1909
SI8499DB-T2-E1 DISTI # SI8499DB-T2-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7.8A 6-Pin Micro Foot T/R (Alt: SI8499DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI8499DB-T2-E1 DISTI # 69W7243	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -16A, MICRO FOOT-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-500mV, RoHS Compliant: Yes	0	1:$0.4310 10:$0.4180 100:$0.3300 250:$0.3130 500:$0.2920 1000:$0.2340
SI8499DB-T2-E1 DISTI # 86R3935	Vishay Intertechnologies	MOSFET, P CH, -20V, -16A, MICRO FOOT-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.2210 3000:$0.2190 6000:$0.2090 12000:$0.1850
SI8499DB-T2-E1 DISTI # 781-SI8499DB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant	67	1:$0.7100 10:$0.5380 100:$0.4000 500:$0.3280 1000:$0.2540 3000:$0.2490
SI8499DB-T2-E1	Vishay Siliconix		2110	13:$0.4125 50:$0.2681 188:$0.1547 648:$0.1320 1403:$0.1155
SI8499DB-T2-E1	Vishay Siliconix	16 A, 20 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET	1658	1191:$0.1500 251:$0.1680 1:$0.4800
SI8499DB-T2-E1	Vishay Siliconix	16 A, 20 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET	1688	1213:$0.1430 219:$0.1650 1:$0.5500
SI8499DBT2E1	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI8499DB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant	Americas -

SI8499DB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes