IRLU3802PBF

IRLU3802PBF
Mfr. #:
IRLU3802PBF
제조사:
Infineon / IR
설명:
MOSFET 12V 1 N-CH HEXFET 8.5mOhm 27nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRLU3802PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU3802PBF DatasheetIRLU3802PBF Datasheet (P4-P6)IRLU3802PBF Datasheet (P7-P9)IRLU3802PBF Datasheet (P10-P11)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-251-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
12 V
Id - 연속 드레인 전류:
84 A
Rds On - 드레인 소스 저항:
8.5 mOhms
Vgs - 게이트 소스 전압:
12 V
Qg - 게이트 차지:
27 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
88 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
6.22 mm
길이:
6.73 mm
트랜지스터 유형:
1 N-Channel
유형:
HEXFET 전력 MOSFET
너비:
2.38 mm
상표:
인피니언 / IR
가을 시간:
17 ns
상품 유형:
MOSFET
상승 시간:
14 ns
공장 팩 수량:
75
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
21 ns
일반적인 켜기 지연 시간:
11 ns
부품 번호 별칭:
SP001559000
단위 무게:
0.139332 oz
Tags
IRLU3, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):8.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 12V, 84A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:84A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.9V; Case Style:I-PAK; Termination Type:Through Hole; Case Style, Alternate:I-PAK; Current, Idm Pulse:320A; Power Dissipation:88W; Power, Pd:88W; Resistance, Rds on @ Vgs = 10V:0.0085ohm; Thermal Resistance, Junction to Case A:1.7°C/W; Voltage, Vds Max:12V; Voltage, Vgs th Max:1.9V
부분 # 제조 설명 재고 가격
IRLU3802PBF
DISTI # IRLU3802PBF-ND
Infineon Technologies AGMOSFET N-CH 12V 84A I-PAK
RoHS: Compliant
Min Qty: 6525
Container: Tube
Limited Supply - Call
    IRLU3802PBF
    DISTI # IRLU3802PBF
    Infineon Technologies AGTrans MOSFET N-CH 12V 84A 3-Pin(3+Tab) IPAK - Bulk (Alt: IRLU3802PBF)
    Min Qty: 695
    Container: Bulk
    Americas - 0
    • 695:$0.5249
    • 697:$0.5039
    • 1392:$0.4849
    • 3475:$0.4659
    • 6950:$0.4579
    IRLU3802PBF
    DISTI # 70018576
    Infineon Technologies AGMOSFET,12V,84A,8.5 MOHM,27 NC QG,LOGIC LEVEL,I-PAK
    RoHS: Compliant
    0
    • 6525:$1.4700
    • 13050:$1.4410
    • 32625:$1.3970
    • 65250:$1.3380
    • 163125:$1.2500
    IRLU3802PBF
    DISTI # 942-IRLU3802PBF
    Infineon Technologies AGMOSFET 12V 1 N-CH HEXFET 8.5mOhm 27nC
    RoHS: Compliant
    0
      IRLU3802PBFInternational RectifierPower Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant
      8417
      • 1000:$0.4700
      • 500:$0.5000
      • 100:$0.5200
      • 25:$0.5400
      • 1:$0.5800
      IRLU3802PBFInternational Rectifier 80
      • 41:$1.2500
      • 11:$1.5000
      • 1:$2.5000
      IRLU3802PBFInternational Rectifier 
      RoHS: Compliant
      Europe - 5100
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        OMO.#: OMO-IRLU3802PBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET 12V 1 N-CH HEXFET 8.5mOhm 27nC
        유효성
        재고:
        Available
        주문 시:
        5500
        수량 입력:
        IRLU3802PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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