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IPW60R070CFD7XKSA1

IPW60R070CFD7XKSA1
Mfr. #:
IPW60R070CFD7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET HIGH POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW60R070CFD7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPW60R070CFD7XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
31 A
Rds On - 드레인 소스 저항:
57 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
67 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
156 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
시리즈:
CoolMOS CFD7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
6 ns
상품 유형:
MOSFET
상승 시간:
23 ns
공장 팩 수량:
240
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
99 ns
일반적인 켜기 지연 시간:
26 ns
부품 번호 별칭:
IPW60R070CFD7 SP001617990
Tags
IPW60R070C, IPW60R070, IPW60R07, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 31A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPW60R070CFD7XKSA1
DISTI # V99:2348_18786389		Infineon Technologies AGHIGH POWER_NEW230
  • 500:$4.6710
  • 250:$4.9240
  • 100:$5.2050
  • 25:$6.1750
  • 10:$6.4710
  • 1:$7.8650
IPW60R070CFD7XKSA1
DISTI # V36:1790_18786389		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$3.5240
  • 120000:$3.5290
  • 24000:$4.2970
  • 2400:$5.9060
  • 240:$6.1900
IPW60R070CFD7XKSA1
DISTI # IPW60R070CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		384In Stock
  • 720:$4.9237
  • 240:$5.6543
  • 25:$6.5120
  • 10:$6.8300
  • 1:$7.5600
IPW60R070CFD7XKSA1
DISTI # 32740012		Infineon Technologies AGHIGH POWER_NEW230
  • 2:$7.8650
IPW60R070CFD7XKSA1
DISTI # 33637520		Infineon Technologies AGHIGH POWER_NEW75
  • 3:$3.7891
IPW60R070CFD7XKSA1
DISTI # IPW60R070CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R070CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.7900
  • 1440:$3.8900
  • 960:$3.9900
  • 480:$4.1900
  • 240:$4.2900
IPW60R070CFD7XKSA1
DISTI # SP001617990		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 (Alt: SP001617990)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€3.4900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.7900
  • 25:€3.9900
  • 10:€4.3900
  • 1:€5.3900
IPW60R070CFD7XKSA1
DISTI # 43AC9330		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes141
  • 500:$4.7300
  • 250:$5.1900
  • 100:$5.4300
  • 50:$5.8500
  • 25:$6.2600
  • 10:$6.5700
  • 1:$7.2600
IPW60R070CFD7XKSA1
DISTI # 726-IPW60R070CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		7414
  • 1:$7.1900
  • 10:$6.5000
  • 25:$6.2000
  • 100:$5.3800
  • 250:$5.1400
  • 500:$4.6800
IPW60R070CFD7XKSA1
DISTI # 2807983		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247861
  • 100:£4.1500
  • 50:£4.4700
  • 10:£4.7800
  • 5:£5.5400
  • 1:£6.0700
IPW60R070CFD7XKSA1
DISTI # 2807983		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247
RoHS: Compliant		191
  • 250:$6.0600
  • 100:$6.1700
  • 50:$6.5100
  • 10:$6.8900
  • 5:$7.7900
  • 1:$8.3300
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IPW60R080P7XKSA1

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RC0805JR-070RL

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OMO.#: OMO-RC0805JR-070RL

 Thick Film Resistors - SMD ZERO OHM JUMPER
B59850C0120A070

Mfr.#: B59850C0120A070

OMO.#: OMO-B59850C0120A070-EPCOS

 Thermistor PTC 10 Ohm 25% 2-Pin Radial Cardboard Strip
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OMO.#: OMO-CDSOT23-SM712-BOURNS

 신규 및 오리지널
유효성
재고:
Available
주문 시:
1990
수량 입력:
IPW60R070CFD7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$7.19
US$7.19
10
US$6.50
US$65.00
25
US$6.20
US$155.00
100
US$5.38
US$538.00
250
US$5.14
US$1 285.00
500
US$4.68
US$2 340.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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