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SIHB24N65E-GE3

SIHB24N65E-GE3
Mfr. #:
SIHB24N65E-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHB24N65E-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB24N65E-GE3 DatasheetSIHB24N65E-GE3 Datasheet (P4-P6)SIHB24N65E-GE3 Datasheet (P7-P9)
ECAD Model:
추가 정보:
SIHB24N65E-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
700 V
Id - 연속 드레인 전류:
24 A
Rds On - 드레인 소스 저항:
145 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
81 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
250 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
E
상표:
비쉐이 / 실리콘닉스
가을 시간:
69 ns
상품 유형:
MOSFET
상승 시간:
84 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
70 ns
일반적인 켜기 지연 시간:
24 ns
단위 무게:
0.050717 oz
Tags
SIHB24, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHB24N65E-GE3
DISTI # 26884872		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		272
  • 22:$3.6462
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		992In Stock
  • 3000:$2.9745
  • 1000:$3.1311
  • 100:$4.3612
  • 25:$5.0320
  • 10:$5.3230
  • 1:$5.9300
SIHB24N65E-GE3
DISTI # V36:1790_09219020		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000:$2.9040
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB24N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$2.7308
  • 6000:$2.8063
  • 4000:$2.8862
  • 2000:$3.0085
  • 1000:$3.1004
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK (Alt: SIHB24N65E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.1900
  • 100:€2.2900
  • 500:€2.2900
  • 50:€2.3900
  • 25:€2.6900
  • 10:€3.2900
  • 1:€4.1900
SIHB24N65E-GE3
DISTI # 68W7035		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7035)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 500:$4.4500
  • 250:$4.9400
  • 100:$5.0900
  • 50:$5.4500
  • 25:$5.8300
  • 10:$6.1900
  • 1:$7.4600
SIHB24N65E-GE3
DISTI # 68W7036		Vishay IntertechnologiesMOSFET, N CH, 650V, 24A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 20000:$2.6200
  • 12000:$2.6700
  • 8000:$2.7700
  • 4000:$2.9900
  • 2000:$3.2000
  • 1:$3.3500
SIHB24N65E-GE3
DISTI # 68W7035		Vishay IntertechnologiesMOSFET, N CHANNEL, 650V, 24A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes272
  • 1:$2.3700
  • 10:$2.3700
  • 25:$2.3700
  • 50:$2.3700
  • 100:$2.3700
  • 250:$2.3700
SIHB24N65E-GE3
DISTI # 78-SIHB24N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		2950
  • 1:$5.9600
  • 10:$4.9400
  • 100:$4.0600
  • 250:$3.9400
  • 500:$3.5300
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-E3
DISTI # 781-SIHB24N65E-E3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-GE3
DISTI # 2283632		Vishay IntertechnologiesMOSFET, N-CH, 650V, 24A, D2PAK
RoHS: Compliant		1258
  • 3000:$4.5000
  • 1000:$4.7200
  • 100:$6.5800
  • 25:$7.5900
  • 10:$8.0300
  • 1:$8.9400
SIHB24N65E-GE3
DISTI # 2283632		Vishay IntertechnologiesMOSFET, N-CH, 650V, 24A, D2PAK1269
  • 500:£2.8200
  • 250:£3.0400
  • 100:£3.1300
  • 10:£3.8100
  • 1:£5.0700
SIHB24N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
  • 10:$3.8640
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OMO.#: OMO-FDD4685-F085

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STP10NM60N

Mfr.#: STP10NM60N

OMO.#: OMO-STP10NM60N

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Mfr.#: STPS41H100CG-TR

OMO.#: OMO-STPS41H100CG-TR

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TC1240ECHTR

Mfr.#: TC1240ECHTR

OMO.#: OMO-TC1240ECHTR

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CSTNE16M0V530000R0

Mfr.#: CSTNE16M0V530000R0

OMO.#: OMO-CSTNE16M0V530000R0

 Resonators 16.0000MHz 15pF SMD CHP Resntr
NUCLEO-F207ZG

Mfr.#: NUCLEO-F207ZG

OMO.#: OMO-NUCLEO-F207ZG

 Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F207ZG MCU, supports Arduino, ST Zio and morpho connectivity
STP10NM60N

Mfr.#: STP10NM60N

OMO.#: OMO-STP10NM60N-STMICROELECTRONICS

 Darlington Transistors MOSFET N-channel 600 V Mdmesh 8A
유효성
재고:
Available
주문 시:
1985
수량 입력:
SIHB24N65E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$5.96
US$5.96
10
US$4.94
US$49.40
100
US$4.06
US$406.00
250
US$3.94
US$985.00
500
US$3.53
US$1 765.00
1000
US$2.98
US$2 980.00
2000
US$2.83
US$5 660.00
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