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LMG1210RVRT

LMG1210RVRT
Mfr. #:
LMG1210RVRT
설명:
Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
LMG1210RVRT 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
LMG1210RVRT 추가 정보 LMG1210RVRT Product Details
제품 속성
속성 값
제조사:
텍사스 인스트루먼트
제품 카테고리:
게이트 드라이버
RoHS:
Y
제품:
MOSFET 게이트 드라이버
유형:
하이 사이드, 로우 사이드
장착 스타일:
SMD/SMT
패키지/케이스:
WQFN-19
드라이버 수:
2 Driver
출력 수:
2 Output
출력 전류:
3 A
상승 시간:
0.5 ns
가을 시간:
0.5 ns
공급 전압 - 최소:
4.75 V
공급 전압 - 최대:
18 V
전파 지연 - 최대:
20 ns
작동 공급 전류:
380 uA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 125 C
시리즈:
LMG1210
포장:
릴
작동 온도 범위:
- 40 C to + 125 C
출력 전압:
5 V
기술:
GaN
상표:
텍사스 인스트루먼트
논리 유형:
TTL
꺼짐 시간 - 최대:
18 ns
최대 끄기 지연 시간:
18 ns
최대 켜기 지연 시간:
18 ns
습기에 민감한:
네
상품 유형:
게이트 드라이버
Rds On - 드레인 소스 저항:
400 mOhms
공장 팩 수량:
250
하위 카테고리:
PMIC - 전원 관리 IC
Tags
LMG12, LMG1, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***d
    C***d
    UK

    There's a good video on YouTube demonstrating how to program the timer, search for '35238MP'.

    2019-06-28
    N***a
    N***a
    RU

    Class

    2019-05-13
***AS INSRUMENT
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.
***AS INSRUMENTS
To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.
***INS
The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers
OMO Electronic LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications that feature adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO which ensures a gate-drive voltage of 5V regardless of supply voltage.
부분 # 설명 재고 가격
LMG1210RVRT
DISTI # 32147604		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time1750
  • 1250:$3.0728
  • 500:$3.6434
  • 250:$4.0604
LMG1210RVRT
DISTI # 296-53417-1-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-6-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-2-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		250In Stock
  • 1250:$3.1038
  • 500:$3.6802
  • 250:$4.1014
LMG1210RVRT
DISTI # V39:1801_23157708		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
    LMG1210RVRT
    DISTI # V36:1790_23157708    		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
      LMG1210RVRT
      DISTI # V72:2272_23157708      		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
        LMG1210RVRT
        DISTI # LMG1210RVRT        		GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: LMG1210RVRT)
        RoHS: Compliant
        Min Qty: 250
        Container: Reel        		Americas - 0
        • 2500:$2.6900
        • 1500:$2.7900
        • 1000:$2.8900
        • 500:$2.9900
        • 250:$3.1900
        XLMG1210RVRT
        DISTI # XLMG1210RVRT        		GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: XLMG1210RVRT)
        RoHS: Not Compliant
        Min Qty: 250
        Container: Reel        		Americas - 0
          LMG1210RVRT200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time1230
          • 1000:$2.5200
          • 750:$2.5700
          • 500:$2.9700
          • 250:$3.4100
          • 100:$3.6600
          • 25:$4.0800
          • 10:$4.3700
          • 1:$4.8600
          LMG1210RVRT
          DISTI # 595-LMG1210RVRT          		Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
          RoHS: Compliant          		1320
          • 1:$5.8700
          • 10:$5.2800
          • 100:$4.3200
          • 250:$4.0500
          • 500:$3.6800
          • 1000:$3.1000
          • 2500:$2.9400
          영상 부분 # 설명
          LT6376IMS#PBF

          Mfr.#: LT6376IMS#PBF

          OMO.#: OMO-LT6376IMS-PBF

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          OMO.#: OMO-LTC3777ELXE-PBF

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          OPA320AQDBVRQ1

          Mfr.#: OPA320AQDBVRQ1

          OMO.#: OMO-OPA320AQDBVRQ1

          		 Precision Amplifiers Automotive Qualified Precision, Zero-Crossover, 20MHz, 0.9pA Ib, RRIO, CMOS Operational Amplifier 5-SOT-23 -40 to 125
          22201C106MAT2A

          Mfr.#: 22201C106MAT2A

          OMO.#: OMO-22201C106MAT2A

          		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 10uF X7R 2220 20% Tol HIGH CV
          GRM188R6YA106MA73D

          Mfr.#: GRM188R6YA106MA73D

          OMO.#: OMO-GRM188R6YA106MA73D

          		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10uF 35volts *Derate Voltage/Temp
          901-10510-1

          Mfr.#: 901-10510-1

          OMO.#: OMO-901-10510-1-AMPHENOL-RF

          		 SMA STRAIGHT END LAUNCH JACK,
          OPA320AQDBVRQ1

          Mfr.#: OPA320AQDBVRQ1

          OMO.#: OMO-OPA320AQDBVRQ1-TEXAS-INSTRUMENTS

          		 IC OP AMP GP RR 20MHZ 5-SOT-23
          22201C106MAT2A

          Mfr.#: 22201C106MAT2A

          OMO.#: OMO-22201C106MAT2A-AVX

          		 Cap Ceramic 10uF 100V X7R 20% Pad SMD 2220 125C T/R
          GRM188R6YA106MA73D

          Mfr.#: GRM188R6YA106MA73D

          OMO.#: OMO-GRM188R6YA106MA73D-MURATA-ELECTRONICS

          		 Cap Ceramic 10uF 35V X5R 20% Pad SMD 0603 85C T/R
          XAL1510-153MED

          Mfr.#: XAL1510-153MED

          OMO.#: OMO-XAL1510-153MED-1190

          		 Fixed Inductors 15uH 20% 18A 12.4mOhms AEC-Q200
          유효성
          재고:
          Available
          주문 시:
          1984
          수량 입력:
          LMG1210RVRT의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$5.87
          US$5.87
          10
          US$5.28
          US$52.80
          100
          US$4.32
          US$432.00
          시작
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