IPB320N20N3GATMA1

IPB320N20N3GATMA1
Mfr. #:
IPB320N20N3GATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB320N20N3GATMA1 데이터 시트
배달:
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지불:
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HTML Datasheet:
IPB320N20N3GATMA1 DatasheetIPB320N20N3GATMA1 Datasheet (P4-P6)IPB320N20N3GATMA1 Datasheet (P7-P9)IPB320N20N3GATMA1 Datasheet (P10-P11)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
200 V
Id - 연속 드레인 전류:
34 A
Rds On - 드레인 소스 저항:
28 mOhms
Vgs th - 게이트 소스 임계 전압:
2 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
29 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
136 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
키:
4.4 mm
길이:
10 mm
시리즈:
OptiMOS 3
트랜지스터 유형:
1 N-Channel
너비:
9.25 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
27 S
가을 시간:
4 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
21 ns
일반적인 켜기 지연 시간:
11 ns
부품 번호 별칭:
G IPB320N20N3 IPB32N2N3GXT SP000691172
단위 무게:
0.139332 oz
Tags
IPB320N20N3G, IPB320, IPB32, IPB3, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 200V, 34A, TO263-3; Transistor Polarity:N Channel; Continuous Drai
***ure Electronics
Single N-Channel 200 V 32 mOhm 29 nC OptiMOS™ Power Mosfet - D2PAK-3
***p One Stop Japan
Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
***nell
MOSFET, N-CH, 200V, 34A, TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
부분 # 제조 설명 재고 가격
IPB320N20N3GATMA1
DISTI # V72:2272_06382940
Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB320N20N3GATMA1
    DISTI # V36:1790_06382940
    Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    0
    • 1000000:$1.1950
    • 500000:$1.1970
    • 100000:$1.3070
    • 10000:$1.4800
    • 1000:$1.5080
    IPB320N20N3GATMA1
    DISTI # IPB320N20N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    On Order
    • 5000:$1.3789
    • 2000:$1.4328
    • 1000:$1.5082
    IPB320N20N3GATMA1
    DISTI # IPB320N20N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 500:$1.8420
    • 100:$2.1638
    • 10:$2.6410
    • 1:$2.9400
    IPB320N20N3GATMA1
    DISTI # IPB320N20N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 500:$1.8420
    • 100:$2.1638
    • 10:$2.6410
    • 1:$2.9400
    IPB320N20N3GATMA1
    DISTI # IPB320N20N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB320N20N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 4000:$1.2900
    • 6000:$1.2900
    • 10000:$1.2900
    • 1000:$1.3900
    • 2000:$1.3900
    IPB320N20N3GATMA1
    DISTI # SP000691172
    Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R (Alt: SP000691172)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 6000:€1.0900
    • 10000:€1.0900
    • 4000:€1.1900
    • 2000:€1.2900
    • 1000:€1.5900
    IPB320N20N3GATMA1
    DISTI # 47W3467
    Infineon Technologies AGMOSFET, N CHANNEL, 200V, 34A, TO263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$1.7200
    • 100:$2.0200
    • 10:$2.3200
    • 1:$2.7400
    IPB320N20N3 G
    DISTI # 726-IPB320N20N3GXT
    Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    874
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 726-IPB320N20N3GATMA
    Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    962
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 7528344
    Infineon Technologies AGMOSFET N-CHANNEL 200V 34A OPTIMOS3 TO263, EA15
    • 10:£1.5600
    • 1:£2.2200
    IPB320N20N3GATMA1
    DISTI # 2212854
    Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-32
    • 500:£1.3000
    • 250:£1.4500
    • 100:£1.5500
    • 10:£1.7800
    • 1:£2.3600
    IPB320N20N3GATMA1
    DISTI # 2212854
    Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-3
    RoHS: Compliant
    12
    • 1000:$2.1600
    • 500:$2.5600
    • 250:$2.8500
    • 100:$3.0100
    • 10:$3.4700
    • 1:$4.0800
    영상 부분 # 설명
    STP8N120K5

    Mfr.#: STP8N120K5

    OMO.#: OMO-STP8N120K5

    MOSFET N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-220 package
    CRCW080510R0FKEAC

    Mfr.#: CRCW080510R0FKEAC

    OMO.#: OMO-CRCW080510R0FKEAC

    Thick Film Resistors - SMD 1/8Watt 10ohms 1% Commercial Use
    STP8N120K5

    Mfr.#: STP8N120K5

    OMO.#: OMO-STP8N120K5-STMICROELECTRONICS

    MOSFET N-CH 1200V 8A TO-220
    ISO1410BDW

    Mfr.#: ISO1410BDW

    OMO.#: OMO-ISO1410BDW-TEXAS-INSTRUMENTS

    INTERFACE TX/RX/TXRX CAN
    CRCW080510R0FKEAC

    Mfr.#: CRCW080510R0FKEAC

    OMO.#: OMO-CRCW080510R0FKEAC-VISHAY-DALE

    D12/CRCW0805-C 100 10R 1% ET1
    CRCW0805100RFKEAC

    Mfr.#: CRCW0805100RFKEAC

    OMO.#: OMO-CRCW0805100RFKEAC-VISHAY-DALE

    D12/CRCW0805-C 100 100R 1% ET1
    ADS1261BIRHBT

    Mfr.#: ADS1261BIRHBT

    OMO.#: OMO-ADS1261BIRHBT-TEXAS-INSTRUMENTS

    Precision, 5-Channel and 10-Channel, 40-kSPS, 24-Bit, Delta-Sigma ADCs With PGA and Monitors
    유효성
    재고:
    956
    주문 시:
    2939
    수량 입력:
    IPB320N20N3GATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.71
    US$2.71
    10
    US$2.30
    US$23.00
    100
    US$2.00
    US$200.00
    250
    US$1.89
    US$472.50
    500
    US$1.70
    US$850.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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