TGF2018

Mfr. #:: TGF2018
제조사:: Qorvo
설명:: RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2018 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TGF2018 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: pHEMT

기술:: GaAs

얻다:: 14 dB

Vds - 드레인 소스 항복 전압:: 8 V

Vgs - 게이트 소스 항복 전압:: - 15 V

Id - 연속 드레인 전류:: 58 mA

최대 드레인 게이트 전압:: 12 V

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 640 mW

장착 스타일:: SMD/SMT

포장:: 젤팩

구성:: 하나의

동작 주파수:: 20 GHz

작동 온도 범위:: - 65 C to + 150 C

제품:: RF JFET

시리즈:: TGF

유형:: GaAs pHEMT

상표:: 코르보

순방향 트랜스컨덕턴스 - 최소:: 70 mS

NF - 노이즈 피겨:: 1 dB

P1dB - 압축점:: 22 dBm

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1098412

Tags: TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2018 설명

***W: Transistor, DC- 20 GHz, 22 dBm, 14.5 dB, 1 dB NF, 8V DIE

TGF2018 추가 정보

TGF2018/25 Heterojunction Power FETs: Qorvo TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

Market price

부분 #	제조	설명	재고	가격
TGF2018 DISTI # 772-TGF2018	Qorvo	RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm RoHS: Compliant	200	100:$5.8300 300:$5.4500 500:$5.0900 1000:$4.7600

TGF2018

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes