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IPP65R225C7XKSA1

IPP65R225C7XKSA1
Mfr. #:
IPP65R225C7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 650V 11A TO220-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP65R225C7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPP65R225C7XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
11 A
Rds On - 드레인 소스 저항:
199 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
20 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
63 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
15.65 mm
길이:
10 mm
시리즈:
CoolMOS C7
트랜지스터 유형:
1 N-Channel
너비:
4.4 mm
상표:
인피니언 테크놀로지스
가을 시간:
10 ns
상품 유형:
MOSFET
상승 시간:
6 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
48 ns
일반적인 켜기 지연 시간:
9 ns
부품 번호 별칭:
IPP65R225C7 SP000929432
단위 무게:
0.211644 oz
Tags
IPP65R22, IPP65R2, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
***ukat
N-Ch 650V 11A 63W 0,225R TO220
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
부분 # 제조 설명 재고 가격
IPP65R225C7XKSA1
DISTI # 31593601		Infineon Technologies AGTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 500:$1.0670
IPP65R225C7XKSA1
DISTI # IPP65R225C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 11A TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		202In Stock
  • 5000:$1.1630
  • 2500:$1.2077
  • 500:$1.5656
  • 100:$1.9055
  • 25:$2.2364
  • 10:$2.3710
  • 1:$2.6400
IPP65R225C7XKSA1
DISTI # V99:2348_06378009		Infineon Technologies AGTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
    IPP65R225C7XKSA1
    DISTI # V36:1790_06378009    		Infineon Technologies AGTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
    RoHS: Compliant    		0
    • 500000:$0.9925
    • 250000:$0.9960
    • 50000:$1.3740
    • 5000:$2.0880
    • 500:$2.2100
    IPP65R225C7XKSA1
    DISTI # SP000929432    		Infineon Technologies AGTrans MOSFET N-CH 700V 11A 3-Pin TO-220 Tube (Alt: SP000929432)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 3000
    • 1000:€1.0129
    • 500:€1.0499
    • 100:€1.0909
    • 50:€1.1349
    • 25:€1.1819
    • 10:€1.2889
    • 1:€1.4179
    IPP65R225C7XKSA1
    DISTI # IPP65R225C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 11A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R225C7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 5000:$1.0819
    • 3000:$1.1019
    • 2000:$1.1399
    • 1000:$1.1829
    • 500:$1.2269
    IPP65R225C7XKSA1
    DISTI # 50Y2073    		Infineon Technologies AGPower MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V RoHS Compliant: Yes0
    • 5000:$1.1100
    • 2500:$1.1600
    • 1000:$1.2400
    • 500:$1.5000
    • 100:$1.7200
    • 10:$2.1500
    • 1:$2.5300
    IPP65R225C7
    DISTI # 726-IPB65R225C7    		Infineon Technologies AGMOSFET 650V CoolMOS C7 Power Trans,225mOhm
    RoHS: Compliant    		119
    • 1:$2.5000
    • 10:$2.1300
    • 100:$1.7000
    • 500:$1.4900
    • 1000:$1.2300
    IPP65R225C7XKSA1
    DISTI # 726-IPP65R225C7XKSA1    		Infineon Technologies AGMOSFET N-Ch 650V 11A TO220-3
    RoHS: Compliant    		0
    • 1:$2.5000
    • 10:$2.1300
    • 100:$1.7000
    • 500:$1.4900
    • 1000:$1.2300
    • 2500:$1.1500
    • 5000:$1.1000
    IPP65R225C7XKSA1
    DISTI # IPP65R225C7    		Infineon Technologies AGN-Ch 650V 11A 63W 0,225R TO220
    RoHS: Compliant    		465
    • 1:€5.1700
    • 10:€2.1700
    • 50:€1.1700
    • 100:€1.0700
    IPP65R225C7XKSA1
    DISTI # 2480864    		Infineon Technologies AGMOSFET, N-CH, 650V, 11A, TO-220-3
    RoHS: Compliant    		9
    • 1000:$1.8500
    • 500:$2.2500
    • 100:$2.5600
    • 10:$3.2100
    • 1:$3.7700
    IPP65R225C7XKSA1
    DISTI # 2480864    		Infineon Technologies AGMOSFET, N-CH, 650V, 11A, TO-220-3547
    • 500:£1.0300
    • 250:£1.1000
    • 100:£1.1600
    • 25:£1.4700
    • 5:£1.7400
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    OMO.#: OMO-L6562ADTR-STMICROELECTRONICS

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    OMO.#: OMO-TPS54201DDCR-TEXAS-INSTRUMENTS

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    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    IPP65R225C7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.50
    US$2.50
    10
    US$2.13
    US$21.30
    100
    US$1.70
    US$170.00
    500
    US$1.49
    US$745.00
    1000
    US$1.23
    US$1 230.00
    2500
    US$1.15
    US$2 875.00
    5000
    US$1.10
    US$5 500.00
    10000
    US$1.06
    US$10 600.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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