QPD1000

Mfr. #:: QPD1000
제조사:: Qorvo
설명:: RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: QPD1000 데이터 시트
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ECAD Model:
추가 정보:: QPD1000 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 19 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 28 V

Vgs - 게이트 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 817 mA

출력 파워:: 24 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

Pd - 전력 손실:: 28.8 W

장착 스타일:: SMD/SMT

패키지/케이스:: QFN-8

포장:: 쟁반

구성:: 하나의

동작 주파수:: 30 MHz to 1.215 GHz

작동 온도 범위:: - 40 C to + 85 C

시리즈:: QPD

상표:: 코르보

개발 키트:: QPD1000PCB401, QPD1000PCB402

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

Vgs th - 게이트 소스 임계 전압:: - 2.8 V

부품 번호 별칭:: 1131140

Tags: QPD100, QPD10, QPD1, QPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1000 설명

***W: RF Power Transistor, .03- 1.215 GHz, 15W, 28 V, GaN

QPD1000 추가 정보

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
QPD1000 DISTI # 772-QPD1000	Qorvo	RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN RoHS: Compliant	524	1:$58.0000 25:$51.0000 100:$45.0000
QPD1000PCB4B01 DISTI # 772-QPD1000EB1	Qorvo	RF Development Tools QPD1000 50-1000MHz Eval Board RoHS: Compliant	3	1:$875.0000
QPD1000PCB4B02 DISTI # 772-QPD1000EB2	Qorvo	RF Development Tools QPD1000 200-1200MHz Eval Board RoHS: Compliant	2	1:$875.0000

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