IS43LR32160C-6BLI

Mfr. #:: IS43LR32160C-6BLI
제조사:: ISSI
설명:: DRAM 512M, 1.8V, 166Mhz Mobile DDR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IS43LR32160C-6BLI 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IS43LR32160C-6BLI 추가 정보

제품 속성
속성 값

제조사:: ISSI

제품 카테고리:: 적은 양

RoHS:: Y

유형:: SDRAM Mobile - LPDDR1

데이터 버스 폭:: 32 bit

조직:: 16 M x 32

패키지/케이스:: BGA-90

메모리 크기:: 512 Mbit

최대 클록 주파수:: 166 MHz

액세스 시간:: 6 ns

공급 전압 - 최대:: 1.95 V

공급 전압 - 최소:: 1.7 V

공급 전류 - 최대:: 60 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

시리즈:: IS43LR32160C

포장:: 쟁반

상표:: ISSI

장착 스타일:: SMD/SMT

습기에 민감한:: 네

작동 공급 전압:: 1.8 V

상품 유형:: 적은 양

공장 팩 수량:: 240

하위 카테고리:: 메모리 및 데이터 저장

상표명:: RLDRAM2

단위 무게:: 0.005915 oz

Tags: IS43LR32160C-6BLI, IS43LR32160C, IS43LR3216, IS43LR321, IS43LR3, IS43LR, IS43L, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43LR32160C-6BLI 평가 및 리뷰

A***a

Delivery to krasnodar region more than three months, which already strains. Changed the transistor on the trigger button of the screwdriver and everything worked. Now only load and time will show what quality. Good luck to everyone!

2019-08-13

D***i

Thank you to the seller!

2019-07-02

R***r

Very long walked in the russian federation. The seller extended the protection period and expressed concern for what thanks to him.

2019-09-05

N***L

Good one

2019-04-04

IS43LR32160C-6BLI 설명

***ark: 512M, 1.8V, Mobile DDR, 16Mx32, 166Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT

***et: DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA

***ment14 APAC: SDRAM, DDR3, 512MBIT, 166MHZ, BGA-90

***or: IC DRAM 512MBIT PARALLEL 90TFBGA

***nell: SDRAM, DDR3, 512MBIT, 166MHZ, BGA-90; DRAM Memory Configuration: 16M x 32bit; Memory Case Style: BGA; No. of Pins: 90Pins; IC Interface Type: LVCMOS; Access Time: 6ns; Page Size: -; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (12-Jan-2017); Memory Capacity: 512MB; Memory Type: DRAM

IS43LR32160C-6BLI 추가 정보

IS43LR16800F 2Mx16 Mobile DDR SDRAM: ISSI IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.

Mobile DDR SDRAM: ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.

Market price

부분 #	제조	설명	재고	가격
IS43LR32160C-6BLI DISTI # 26639726	Integrated Silicon Solution Inc	DRAM Chip Mobile-DDR SDRAM 512Mbit 16Mx32 1.8V 90-Pin TFBGA RoHS: Compliant	2640	240:$11.1553
IS43LR32160C-6BLI DISTI # IS43LR32160C-6BLI-ND	Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 90TFBGA RoHS: Compliant Min Qty: 240 Container: Tray	Temporarily Out of Stock	240:$8.2871
IS43LR32160C-6BLI-TR DISTI # IS43LR32160C-6BLI-TR-ND	Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 90TFBGA RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$7.2902
IS43LR32160C-6BLI DISTI # IS43LR32160C-6BLI	Integrated Silicon Solution Inc	DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA - Bulk (Alt: IS43LR32160C-6BLI) RoHS: Compliant Min Qty: 240 Container: Bulk	Americas - 0	240:$7.9900 480:$7.6900 960:$7.3900 1440:$7.0900 2400:$6.8900
IS43LR32160C-6BLI DISTI # IS43LR32160C-6BLI	Integrated Silicon Solution Inc	DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA (Alt: IS43LR32160C-6BLI) RoHS: Compliant Min Qty: 1	Europe - 0	1:€8.8900 10:€8.1900 25:€7.7900 50:€7.4900 100:€7.2900 500:€6.9900 1000:€6.4900
IS43LR32160C-6BLI-TR DISTI # IS43LR32160C-6BLI-TR	Integrated Silicon Solution Inc	DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA T/R - Tape and Reel (Alt: IS43LR32160C-6BLI-TR) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$8.0900 5000:$7.7900 10000:$7.4900 15000:$7.1900 25000:$6.8900
IS43LR32160C-6BLI-TR DISTI # IS43LR32160C-6BLI-TR	Integrated Silicon Solution Inc	DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA T/R (Alt: IS43LR32160C-6BLI-TR) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€8.1900 5000:€7.8900 10000:€7.5900 15000:€7.0900 25000:€6.5900
IS43LR32160C-6BLI DISTI # 49X0798	Integrated Silicon Solution Inc	SDRAM, DDR3, 512MBIT, 166MHZ, BGA-90,DRAM Memory Configuration:16M x 32bit,Access Time:6ns,Page Size:-,No. of Pins:90Pins,Memory Case Style:BGA,Operating Temperature Min:-40°C,Operating Temperature Max:85°C,IC Interface RoHS Compliant: Yes	175	1:$10.8900 10:$10.1900 25:$9.8900 50:$8.9300 100:$8.4100 250:$7.3900 500:$7.1500
IS43LR32160C-6BLI DISTI # 870-IS43LR32160C6BLI	Integrated Silicon Solution Inc	DRAM 512M, 1.8V, 166Mhz Mobile DDR RoHS: Compliant	239	1:$10.4600 10:$9.6900 25:$9.4700 50:$9.4200 100:$8.2900 250:$7.8800 500:$7.8000 1000:$7.5400
IS43LR32160C-6BLI-TR DISTI # 870-I43LR32160C6BLIR	Integrated Silicon Solution Inc	DRAM 512M, 1.8V, 166Mhz Mobile DDR RoHS: Compliant	0	2500:$7.0000
IS43LR32160C-6BLI DISTI # 2409138	Integrated Silicon Solution Inc	SDRAM, DDR3, 512MBIT, 166MHZ, BGA-90 RoHS: Compliant	175	1:$16.5500 10:$15.3300 25:$14.9900 50:$14.9100 100:$13.1200 250:$12.4800 500:$12.3400 1000:$11.9300
IS43LR32160C-6BLI DISTI # 2409138	Integrated Silicon Solution Inc	SDRAM, DDR3, 512MBIT, 166MHZ, BGA-90 RoHS: Compliant	175	1:£4.5900 10:£4.5000 25:£4.4000 50:£4.3100 100:£4.2100

영상	부분 #	설명
	Mfr.#: IS43LR32800G-6BL-TR OMO.#: OMO-IS43LR32800G-6BL-TR	DRAM 256M, 1.8V, 166Mhz Mobile DDR
	Mfr.#: IS43LR32160C-6BL-TR OMO.#: OMO-IS43LR32160C-6BL-TR	DRAM 512M, 1.8V, 166Mhz Mobile DDR
	Mfr.#: IS43LR32640A-5BL OMO.#: OMO-IS43LR32640A-5BL	DRAM 2G 1.8V DDR 64Mx32 200Mhz 90 ball BGA
	Mfr.#: IS43LR32640A-5BL-TR OMO.#: OMO-IS43LR32640A-5BL-TR	DRAM 2G 1.8V DDR 64Mx32 200Mhz 90 ball BGA
	Mfr.#: IS43LR32800F-6BL OMO.#: OMO-IS43LR32800F-6BL-INTEGRATED-SILICON-SOLUTION	DRAM 256M 1.8V, 166Mhz Mobile DDR SDRAM
	Mfr.#: IS43LR32400F-6BL OMO.#: OMO-IS43LR32400F-6BL-INTEGRATED-SILICON-SOLUTION	DRAM 128M (4Mx32) 166MHz Mobile DDR 1.8v
	Mfr.#: IS43LR32100D-6BLI/BL OMO.#: OMO-IS43LR32100D-6BLI-BL-1190	신규 및 오리지널
	Mfr.#: IS43LR32320B-5BLI OMO.#: OMO-IS43LR32320B-5BLI-INTEGRATED-SILICON-SOLUTION	IC DRAM 1G PARALLEL 90LFBGA
	Mfr.#: IS43LR32640A-6BLI/BL- OMO.#: OMO-IS43LR32640A-6BLI-BL--1190	신규 및 오리지널
	Mfr.#: IS43LR32320B-5BLI-TR OMO.#: OMO-IS43LR32320B-5BLI-TR-INTEGRATED-SILICON-SOLUTION	IC DRAM 1G PARALLEL 90LFBGA