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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| F475R06W1E3BOMA1 DISTI # V99:2348_17558450 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray RoHS: Compliant | 8 |
|
| F475R06W1E3BOMA1 DISTI # F475R06W1E3BOMA1-ND | Infineon Technologies AG | IGBT MODULE VCES 600V 75A Min Qty: 24 Container: Bulk | Temporarily Out of Stock |
|
| F4-75R06W1E3 DISTI # 30604230 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 18-Pin EASY1B RoHS: Compliant | 97 |
|
| F475R06W1E3BOMA1 DISTI # 33693727 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray RoHS: Compliant | 11 |
|
| F475R06W1E3BOMA1 DISTI # 26612384 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray RoHS: Compliant | 8 |
|
| F475R06W1E3BOMA1 DISTI # F475R06W1E3BOMA1 | Infineon Technologies AG | LOW POWER EASY - Trays (Alt: F475R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Container: Tray | Americas - 0 |
|
| F475R06W1E3BOMA1 DISTI # 13AC8781 | Infineon Technologies AG | IGBT, MODULE, N-CH, 600V, 100A,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:275W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case RoHS Compliant: Yes RoHS: Compliant | 226 |
|
| F4-75R06W1E3 DISTI # 641-F4-75R06W1E3 | Infineon Technologies AG | IGBT Modules N-CH 600V 100A | 30 |
|
| F475R06W1E3BOMA1 DISTI # 2726112 | Infineon Technologies AG | IGBT, MODULE, N-CH, 600V, 100A RoHS: Compliant | 226 |
|
| F4-75R06W1E3 DISTI # C1S322000437601 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 275000mW 18-Pin EASY1B-1 Tray RoHS: Compliant Min Qty: 1 Container: Tray | 97 |
|
| F475R06W1E3BOMA1 DISTI # 2726112 | Infineon Technologies AG | IGBT, MODULE, N-CH, 600V, 100A RoHS: Compliant | 305 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: F475R07W1H3B11ABOMA1 OMO.#: OMO-F475R07W1H3B11ABOMA1 |
IGBT Modules |
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|
Mfr.#: F475R12KS4BOSA1 |
IGBT MODULE VCES 600V 75A |
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|
Mfr.#: F475R-10 OMO.#: OMO-F475R-10-1190 |
신규 및 오리지널 |
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|
Mfr.#: F475R-20 OMO.#: OMO-F475R-20-1190 |
신규 및 오리지널 |
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Mfr.#: F475R06W1E3BOMA1 |
IGBT MODULE VCES 600V 75A |
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Mfr.#: F475R07W1H3B11ABOMA1 |
IGBT MODULES |
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Mfr.#: F475R07W2H3B51BOMA1 |
MOD DIODE BRIDGE EASY2B-2-1 |
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Mfr.#: F475R12KS4B11BOSA1 |
IGBT MODULE VCES 600V 75A |
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Mfr.#: F475R07W2H3B51BPSA1 |
MOD DIODE BRIDGE EASY2B-2-1 |
|
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Mfr.#: F475R06W1E3 OMO.#: OMO-F475R06W1E3-1190 |
IGBT Module, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Saturation Voltage Vce(on):600V, Power Dissipation Pd:275W, Collector Emitter Voltage V(br)ceo:600V, No. o |