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S25FL128SAGNFI013

S25FL128SAGNFI013
Mfr. #:
S25FL128SAGNFI013
제조사:
Cypress Semiconductor
설명:
Flash 128Mb, 3V, 133Mhz Serial Flash
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S25FL128SAGNFI013 데이터 시트
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S25FL128SAGNFI013 추가 정보 S25FL128SAGNFI013 Product Details
제품 속성
속성 값
제조사
사이프러스
제품 카테고리
메모리
시리즈
FL-S
포장
테이프 및 릴(TR) 대체 포장
패키지 케이스
8-WDFN Exposed Pad
작동 온도
-40°C ~ 85°C (TA)
상호 작용
SPI 시리얼
전압 공급
2.7 V ~ 3.6 V
공급자-장치-패키지
8-WSON (6x8)
메모리 크기
128M (16M x 8)
메모리형
플래시 - NOR
속도
133MHz
포맷 메모리
플래시
Tags
S25FL128SAGNFI01, S25FL128SAGNFI, S25FL128SAGN, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte). 3.0V SPI Flash Memory
***et
NOR Flash Serial-SPI 3V/3.3V 128Mbit 128M x 1bit 8ns 8-Pin WSON EP T/R
***i-Key
IC FLASH 128M SPI 133MHZ 8WSON
***ark
128-MBIT CMOS 3.0 VOLT 65NM FL
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
부분 # 제조 설명 재고 가격
S25FL128SAGNFI013
DISTI # S25FL128SAGNFI013-ND		Cypress SemiconductorIC FLASH 128M SPI 133MHZ 8WSON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$2.4394
S25FL128SAGNFI013
DISTI # 68X0164		Cypress SemiconductorTAPE AND REEL / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, WSON6X8 IN T&R PACKING0
  • 1:$3.2000
S25FL128SAGNFI013
DISTI # 797-25FL128SAGNFI013		Cypress SemiconductorNOR Flash 128Mb, 3V, 133Mhz Serial Flash
RoHS: Compliant		1917
  • 1:$2.9300
  • 10:$2.6600
  • 25:$2.6300
  • 50:$2.5900
  • 100:$2.3200
  • 250:$2.3100
  • 500:$2.2200
  • 1000:$2.1300
  • 2500:$2.0800
S25FL128SAGNFI013KOA Speer Electronics Inc 26027
    S25FL128SAGNFI013
    DISTI # XSFR00000012004    		CYPRESS SEMICONDUCTORFlash, 128MX1, PDSO8
    RoHS: Compliant    		2500
      영상 부분 # 설명
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      OMO.#: OMO-S25FL128SDPBHIC00-CYPRESS-SEMICONDUCTOR

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      S25FL128SDPMFV010

      Mfr.#: S25FL128SDPMFV010

      OMO.#: OMO-S25FL128SDPMFV010-CYPRESS-SEMICONDUCTOR

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      S25FL128SDPBHV210

      Mfr.#: S25FL128SDPBHV210

      OMO.#: OMO-S25FL128SDPBHV210-CYPRESS-SEMICONDUCTOR

      		 IC FLASH 128M SPI 66MHZ 24BGA FL-S
      유효성
      재고:
      Available
      주문 시:
      3000
      수량 입력:
      S25FL128SAGNFI013의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$3.00
      US$3.00
      10
      US$2.85
      US$28.50
      100
      US$2.70
      US$270.00
      500
      US$2.55
      US$1 275.00
      1000
      US$2.40
      US$2 400.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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