T2G6000528-Q3

Mfr. #:: T2G6000528-Q3
제조사:: Qorvo
설명:: RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: T2G6000528-Q3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: T2G6000528-Q3 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 15 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: -

Vgs - 게이트 소스 항복 전압:: -

Id - 연속 드레인 전류:: 650 mA

출력 파워:: 10 W

최대 드레인 게이트 전압:: -

최소 작동 온도:: -

최대 작동 온도:: -

Pd - 전력 손실:: 12.5 W

장착 스타일:: SMD/SMT

포장:: 쟁반

애플리케이션:: 군용 레이더, 전문 및 군용 무선 통신

구성:: 하나의

동작 주파수:: DC to 6 GHz

시리즈:: T2G

상표:: 코르보

순방향 트랜스컨덕턴스 - 최소:: -

개발 키트:: T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1099997

Tags: T2G6000528-Q, T2G6000, T2G6, T2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T2G6000528-Q3 설명

***W: RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

T2G6000528-Q3 추가 정보

T2G GaN HEMT Transistors: QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
T2G6000528-Q3 DISTI # 772-T2G6000528-Q3	Qorvo	RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz RoHS: Compliant	291	1:$80.4000 25:$68.0500 100:$57.6000
T2G6000528-Q3 28V DISTI # 772-T2G6000528-Q328V	Qorvo	RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN RoHS: Compliant	75	1:$80.4000 25:$68.0500 100:$57.6000
T2G6000528-Q3EVB3 DISTI # 772-T2G6000528-Q3EV	Qorvo	RF Development Tools 3-3.3GHz Eval Board RoHS: Compliant	2	1:$875.0000
T2G6000528-Q3, EVAL BOARD DISTI # 772-T2G6000528-Q3EB	Qorvo	RF Development Tools DC-6.0GHz 10 Watt 28V GaN Eval Brd RoHS: Compliant	0	1:$875.0000

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