FDFME3N311ZT

FDFME3N311ZT
Mfr. #:
FDFME3N311ZT
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDFME3N311ZT 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
MicroFET-6
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
1.6 A
Rds On - 드레인 소스 저항:
299 mOhms
Vgs - 게이트 소스 전압:
12 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
1.1 W
구성:
하나의
채널 모드:
상승
상표명:
파워트렌치
포장:
키:
0.75 mm
길이:
2 mm
제품:
MOSFET 소신호
시리즈:
FDFME3N311ZT
트랜지스터 유형:
1 N-Channel
유형:
파워 트렌치 MOSFET
너비:
2 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
2.8 S
가을 시간:
2.8 ns
상품 유형:
MOSFET
상승 시간:
16 ns
공장 팩 수량:
5000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
35 ns
일반적인 켜기 지연 시간:
12 ns
단위 무게:
0.000889 oz
Tags
FDFME, FDFM, FDF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
부분 # 제조 설명 재고 가격
FDFME3N311ZT
DISTI # FDFME3N311ZTTR-ND
ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 5000:$0.2525
FDFME3N311ZT
DISTI # FDFME3N311ZTCT-ND
ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDFME3N311ZT
    DISTI # FDFME3N311ZTDKR-ND
    ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDFME3N311ZT
      DISTI # FDFME3N311ZT
      ON SemiconductorTrans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel
      Europe - 0
      • 5000:€0.4469
      • 10000:€0.3479
      • 20000:€0.2889
      • 30000:€0.2429
      • 50000:€0.2249
      FDFME3N311ZT
      DISTI # 73R3644
      ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes0
      • 1:$0.6400
      • 25:$0.5270
      • 50:$0.4340
      • 100:$0.3400
      • 250:$0.3170
      • 500:$0.2950
      • 1000:$0.2720
      FDFME3N311ZT
      DISTI # 64R3000
      ON SemiconductorMOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes0
      • 1:$0.2860
      • 5000:$0.2840
      • 10000:$0.2500
      • 25000:$0.2250
      • 50000:$0.2130
      FDFME3N311ZTFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      60662
      • 1000:$0.2500
      • 500:$0.2600
      • 100:$0.2700
      • 25:$0.2900
      • 1:$0.3100
      FDFME3N311ZT
      DISTI # 1813536
      ON SemiconductorMOSFET Transistor
      RoHS: Compliant
      0
      • 5000:£0.2410
      FDFME3N311ZT
      DISTI # 1813536
      ON SemiconductorMOSFET Transistor
      RoHS: Compliant
      0
      • 5000:$0.9780
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      8P34S1106NLGI

      Mfr.#: 8P34S1106NLGI

      OMO.#: OMO-8P34S1106NLGI-INTEGRATED-DEVICE-TECH

      Clock Drivers & Distribution 1:6 LVDS Output 1.8V Fanout Buffe
      유효성
      재고:
      776
      주문 시:
      2759
      수량 입력:
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