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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IRF3703PBF DISTI # C1S322000480029 | Infineon Technologies AG | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant | 1 |
|
| IRF3703PBF DISTI # IRF3703PBF-ND | Infineon Technologies AG | MOSFET N-CH 30V 210A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube | 3209In Stock |
|
| IRF3703PBF DISTI # SP001574662 | Infineon Technologies AG | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB (Alt: SP001574662) RoHS: Compliant Min Qty: 1 | Europe - 2750 |
|
| IRF3703PBF DISTI # IRF3703PBF | Infineon Technologies AG | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3703PBF) RoHS: Compliant Min Qty: 3000 Container: Tube | Americas - 0 |
|
| IRF3703PBF DISTI # IRF3703PBF | Infineon Technologies AG | Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB (Alt: IRF3703PBF) RoHS: Compliant Min Qty: 1000 | Asia - 0 | |
| IRF3703PBF DISTI # 38K2778 | Infineon Technologies AG | MOSFET Transistor, N Channel, 210 A, 30 V, 2.8 mohm, 10 V, 4 V RoHS Compliant: Yes | 519 |
|
| IRF3703PBF. DISTI # 27AC6868 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:210A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:230W,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| IRF3703PBF DISTI # 70017482 | Infineon Technologies AG | MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.3 Milliohms,ID 210A,TO-220AB,PD 230W,-55de RoHS: Compliant | 1861 |
|
| IRF3703PBF | Infineon Technologies AG | Single N-Channel 30 V 2.8 mOhm 209 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant | 2810Tube |
|
| IRF3703PBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 475 |
|
| IRF3703PBF | International Rectifier | Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 780 |
|
| IRF3703PBF DISTI # 942-IRF3703PBF | Infineon Technologies AG | MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC RoHS: Compliant | 887 |
|
| IRF3703PBF DISTI # IRF3703PBF | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,210A,230W,TO220AB | 43 |
|
| IRF3703PBF | International Rectifier | RoHS: Compliant | Europe - 130 | |
| IRF3703PBF DISTI # IRF3703PBF | Infineon Technologies AG | N-Ch 30V 210A 230W 0,0028R TO220AB RoHS: Compliant | 480 |
|
| IRF3703PBF | International Rectifier | INSTOCK | 1113 | |
| IRF3703PBF DISTI # 8657580 | Infineon Technologies AG | MOSFET, N, 30V, 210A, TO-220 RoHS: Compliant | 519 |
|
| IRF3703PBF DISTI # 8657580 | Infineon Technologies AG | MOSFET, N, 30V, 210A, TO-220 RoHS: Compliant | 519 |
|
| IRF3703PBF DISTI # XSKDRABV0021343 | INF | RoHS: Compliant | 756 |
|
| IRF3703PBF DISTI # XSFP00000002593 | Infineon Technologies AG | Power Field-EffectTransistor,57AI(D),100V,0.023ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 1891 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
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|
Mfr.#: IRF3709STRLPBF OMO.#: OMO-IRF3709STRLPBF |
MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC |
|
|
Mfr.#: IRF3711SPBF OMO.#: OMO-IRF3711SPBF |
MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC |
|
|
Mfr.#: IRF3704LPBF |
MOSFET N-CH 20V 77A TO-262 |
|
|
Mfr.#: IRF3710L |
MOSFET N-CH 100V 57A TO-262 |
|
|
Mfr.#: IRF3711ZSTRR |
MOSFET N-CH 20V 92A D2PAK |
|
Mfr.#: IRF3709ZCSPBF OMO.#: OMO-IRF3709ZCSPBF-1190 |
MOSFET, 30V, 87A, 6.3 MOHM, 17 NC QG, D2-PAK |
|
|
Mfr.#: IRF3711ZCSTRLP |
MOSFET N-CH 20V 92A D2PAK |
|
Mfr.#: IRF3710PBF,IRF3710, OMO.#: OMO-IRF3710PBF-IRF3710--1190 |
신규 및 오리지널 |
|
|
Mfr.#: IRF3710SPBF |
MOSFET N-CH 100V 57A D2PAK |
|
Mfr.#: IRF3711Z F3711 IRL3716 |
신규 및 오리지널 |