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IRGIB15B60KD1P

IRGIB15B60KD1P
Mfr. #:
IRGIB15B60KD1P
제조사:
Infineon Technologies
설명:
IGBT Transistors 600V Low-Vceon
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRGIB15B60KD1P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IRGIB15B60KD1P 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
IGBT - 싱글
시리즈
-
포장
튜브
단위 무게
0.081130 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-220-3 Full Pack
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-220AB Full-Pak
구성
하나의
파워맥스
52W
역복구-시간-trr
67ns
전류 수집기 Ic-Max
19A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT형
NPT
전류 수집기 펄스 Icm
38A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 15A
스위칭 에너지
127μJ (on), 334μJ (off)
게이트 차지
56nC
Td-on-off-25°C
30ns/173ns
시험조건
400V, 15A, 22 Ohm, 15V
Pd 전력 손실
52 W
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
600 V
컬렉터-이미터-포화-전압
1.8 V
연속 수집기 전류 at-25-C
19 A
최대 게이트 이미 터 전압
+/- 20 V
Tags
IRGIB15B60KD1P, IRGIB15, IRGIB1, IRGIB, IRGI, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, Infineon IRGIB15B60KD1P IGBT, 19 A 600 V, 3-Pin TO-220
***ical
Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ineon
Target Applications: Fan; Pump; Solar; UPS; Washing Machine
***ied Electronics & Automation
IGBT 19A 600V Ultrafast Diode TO-220FP
***i-Key
IGBT ULT FAST DIO 600V TO-220FP
***ark
IGBT, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:19A; Voltage, Vce Sat Max:2.2V; Power Dissipation:52W; Case Style:TO-220FP; Termination Type:Through Hole; ;RoHS Compliant: Yes
***nell
IGBT, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:19A; Voltage, Vce Sat Max:2.2V; Power Dissipation:52W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:38A; Power, Pd:52W; Time, Rise:35ns
***ment14 APAC
IGBT, TO-220FP; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:52W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:19A; Package / Case:TO-220FP; Power Dissipation Max:52W; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
부분 # 제조 설명 재고 가격
IRGIB15B60KD1P
DISTI # 31066240		Infineon Technologies AGTrans IGBT Chip N-CH 600V 19A 52000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
RoHS: Compliant		1000
  • 5000:$1.8528
  • 2500:$1.9200
  • 1000:$2.0256
  • 500:$2.4000
  • 250:$2.6688
  • 100:$2.8128
  • 10:$3.2448
IRGIB15B60KD1P
DISTI # IRGIB15B60KD1P-ND		Infineon Technologies AGIGBT 600V 19A 52W TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		3990In Stock
  • 1000:$2.2075
  • 500:$2.6175
  • 100:$3.0747
  • 50:$3.5478
  • 1:$4.1800
IRGIB15B60KD1P
DISTI # C1S322000499975		Infineon Technologies AGTrans IGBT Chip N-CH 600V 19A 52000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
RoHS: Compliant		1000
  • 1000:$2.1500
  • 500:$2.3200
  • 100:$3.0300
  • 50:$3.3000
  • 10:$4.0200
  • 1:$6.2000
IRGIB15B60KD1P-EL
DISTI # IRGIB15B60KD1P		Infineon Technologies AGTrans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack EL - Rail/Tube (Alt: IRGIB15B60KD1P)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$1.9900
  • 10:$1.9900
  • 25:$1.9900
  • 50:$1.9900
  • 100:$1.8900
  • 500:$1.7900
  • 1000:$1.7900
IRGIB15B60KD1P
DISTI # 63J7449		Infineon Technologies AGSINGLE IGBT, 600V,DC Collector Current:19A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:52W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:- RoHS Compliant: Yes103
  • 1:$4.5800
  • 10:$3.9500
  • 25:$3.7900
  • 50:$3.6300
  • 100:$3.4700
  • 250:$3.3200
  • 500:$3.0200
IRGIB15B60KD1P
DISTI # 70600036		Infineon Technologies AGIRGIB15B60KD1P,IGBT Transistor,19 A 600 V,3-Pin TO-220
RoHS: Compliant		0
  • 2:$5.5100
IRGIB15B60KD1P
DISTI # 942-IRGIB15B60KD1P		Infineon Technologies AGIGBT Transistors 600V Low-Vceon
RoHS: Compliant		3669
  • 1:$3.9800
  • 10:$3.3800
  • 100:$2.9300
  • 250:$2.7800
  • 500:$2.5000
IRGIB15B60KD1PInternational RectifierInsulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant		96
  • 1000:$2.3200
  • 500:$2.4400
  • 100:$2.5400
  • 25:$2.6500
  • 1:$2.8500
IRGIB15B60KD1P
DISTI # 8303271P		Infineon Technologies AGIGBT 19A 600V ULTRAFAST DIODE TO-220FP, TU296
  • 10:£2.9700
IRGIB15B60KD1P
DISTI # 8303271		Infineon Technologies AGIGBT 19A 600V ULTRAFAST DIODE TO-220FP, PK78
  • 2:£3.6250
  • 10:£2.9700
IRGIB15B60KD1P
DISTI # 1013530		Infineon Technologies AGIGBT, TO-220FP
RoHS: Compliant		2103
  • 1:$6.3000
  • 10:$5.3500
  • 100:$4.6500
  • 250:$4.4000
  • 500:$3.9600
  • 1000:$3.3400
  • 2500:$3.3200
IRGIB15B60KD1P
DISTI # 1013530		Infineon Technologies AGIGBT, TO-220FP
RoHS: Compliant		2110
  • 1:£3.4000
  • 10:£2.1100
  • 100:£2.0500
  • 250:£1.9800
  • 500:£1.9200
영상 부분 # 설명
IRGIB15B60KD1P

Mfr.#: IRGIB15B60KD1P

OMO.#: OMO-IRGIB15B60KD1P

 IGBT Transistors 600V Low-Vceon
IRGIB15B60KD1P-EL

Mfr.#: IRGIB15B60KD1P-EL

OMO.#: OMO-IRGIB15B60KD1P-EL-1190

 Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack EL - Rail/Tube (Alt: IRGIB15B60KD1P)
IRGIB15B60KD1P

Mfr.#: IRGIB15B60KD1P

OMO.#: OMO-IRGIB15B60KD1P-INFINEON-TECHNOLOGIES

 IGBT Transistors 600V Low-Vceon
IRGIB15B60KD1

Mfr.#: IRGIB15B60KD1

OMO.#: OMO-IRGIB15B60KD1-1190

 신규 및 오리지널
IRGIB15B60KD1PBF

Mfr.#: IRGIB15B60KD1PBF

OMO.#: OMO-IRGIB15B60KD1PBF-1190

 신규 및 오리지널
IRGIB15B60KD1PBF,GIB15B6

Mfr.#: IRGIB15B60KD1PBF,GIB15B6

OMO.#: OMO-IRGIB15B60KD1PBF-GIB15B6-1190

 신규 및 오리지널
IRGIB15B60KD1PBF.

Mfr.#: IRGIB15B60KD1PBF.

OMO.#: OMO-IRGIB15B60KD1PBF--1190

 신규 및 오리지널
IRGIB15B60KD1PINFINEON

Mfr.#: IRGIB15B60KD1PINFINEON

OMO.#: OMO-IRGIB15B60KD1PINFINEON-1190

 신규 및 오리지널
유효성
재고:
Available
주문 시:
4000
수량 입력:
IRGIB15B60KD1P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.78
US$2.78
10
US$2.64
US$26.40
100
US$2.50
US$250.13
500
US$2.36
US$1 181.15
1000
US$2.22
US$2 223.40
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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