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RGTH50TS65DGC11

RGTH50TS65DGC11
Mfr. #:
RGTH50TS65DGC11
제조사:
Rohm Semiconductor
설명:
IGBT Transistors 650V 25A IGBT Stop Trench
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RGTH50TS65DGC11 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
RGTH50TS65DGC11 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.6 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
50 A
Pd - 전력 손실:
174 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
시리즈:
RGTH50TS65
포장:
튜브
연속 수집가 현재 IC 최대:
50 A
작동 온도 범위:
- 40 C to + 175 C
상표:
로옴 반도체
지속적인 수집가 전류:
25 A
게이트-이미터 누설 전류:
+/- 200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
부품 번호 별칭:
RGTH50TS65D
단위 무게:
1.340411 oz
Tags
RGTH50TS, RGTH5, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 650V 50A 3-Pin TO-247N Tube
***ark
Igbt, Single, 650V, 50A, To-247N-3 Rohs Compliant: Yes
***nell
IGBT, SINGLE, 650V, 50A, TO-247N-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 174W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of P
***i-Key
IGBT TRNCH FIELD 650V 50A TO247N
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 30A Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors FS1TIGBT TO247 30A 650V
***rchild Semiconductor
Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 40A 168000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
부분 # 제조 설명 재고 가격
RGTH50TS65DGC11
DISTI # RGTH50TS65DGC11-ND		ROHM SemiconductorIGBT 650V 50A 174W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		430In Stock
  • 2520:$1.6660
  • 510:$1.9754
  • 120:$2.3205
  • 30:$2.6777
  • 10:$2.8320
  • 1:$3.1500
RGTH50TS65DGC11
DISTI # RGTH50TS65DGC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 50A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH50TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 2700:$1.4900
  • 4500:$1.4900
  • 1800:$1.5900
  • 900:$1.6900
  • 450:$1.7900
RGTH50TS65DGC11
DISTI # 755-RGTH50TS65DGC11		ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant		429
  • 1:$3.1500
  • 10:$2.6800
  • 100:$2.3300
  • 250:$2.2100
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5900
  • 5000:$1.5300
RGTH50TS65DGC11
DISTI # 1501516		ROHM SemiconductorIGBT N-CHANNEL 50A 650V TRENCH TO-247, PK10
  • 500:£1.6740
  • 250:£1.7740
  • 100:£1.8960
  • 25:£2.1680
  • 5:£2.4620
RGTH50TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***16
  • 7:$3.8280
  • 3:$4.3500
  • 1:$5.2200
RGTH50TS65DGC11
DISTI # 2519794		ROHM SemiconductorIGBT, SINGLE, 650V, 50A, TO-247N-3
RoHS: Compliant		0
  • 270:$3.3400
  • 120:$3.5200
  • 30:$4.0600
  • 10:$4.3000
  • 1:$4.7800
RGTH50TS65DGC11
DISTI # 2519794		ROHM SemiconductorIGBT, SINGLE, 650V, 50A, TO-247N-30
  • 500:£1.2200
  • 250:£1.3700
  • 100:£1.4300
  • 10:£1.6600
  • 1:£2.1900
RGTH50TS65DGC11ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGTH50TS65DGC11ROHM SemiconductorRoHS(ship within 1day)20
    • 1:$3.4300
    • 10:$2.5700
    • 50:$2.2600
    • 100:$1.9300
    • 500:$1.8000
    • 1000:$1.7400
    영상 부분 # 설명
    RGTH50TK65GC11

    Mfr.#: RGTH50TK65GC11

    OMO.#: OMO-RGTH50TK65GC11

    		 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGTH50TK65DGC11

    Mfr.#: RGTH50TK65DGC11

    OMO.#: OMO-RGTH50TK65DGC11

    		 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGTH50TS65DGC11

    Mfr.#: RGTH50TS65DGC11

    OMO.#: OMO-RGTH50TS65DGC11

    		 IGBT Transistors 650V 25A IGBT Stop Trench
    RGTH50TS65GC11

    Mfr.#: RGTH50TS65GC11

    OMO.#: OMO-RGTH50TS65GC11

    		 IGBT Transistors 650V 25A IGBT Stop Trench
    RGTH50TS65DGC11

    Mfr.#: RGTH50TS65DGC11

    OMO.#: OMO-RGTH50TS65DGC11-ROHM-SEMI

    		 IGBT Transistors 650V 25A Field Stop Trench IGBT
    RGTH50TS65GC11

    Mfr.#: RGTH50TS65GC11

    OMO.#: OMO-RGTH50TS65GC11-ROHM-SEMI

    		 IGBT Transistors 650V 25A Field Stop Trench IGBT
    RGTH50TK65

    Mfr.#: RGTH50TK65

    OMO.#: OMO-RGTH50TK65-1190

    		 신규 및 오리지널
    RGTH50TS65D

    Mfr.#: RGTH50TS65D

    OMO.#: OMO-RGTH50TS65D-1190

    		 신규 및 오리지널
    유효성
    재고:
    429
    주문 시:
    2412
    수량 입력:
    RGTH50TS65DGC11의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.15
    US$3.15
    10
    US$2.68
    US$26.80
    100
    US$2.33
    US$233.00
    250
    US$2.21
    US$552.50
    500
    US$1.98
    US$990.00
    1000
    US$1.67
    US$1 670.00
    2500
    US$1.59
    US$3 975.00
    5000
    US$1.53
    US$7 650.00
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