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IKY40N120CH3XKSA1

IKY40N120CH3XKSA1
Mfr. #:
IKY40N120CH3XKSA1
제조사:
Infineon Technologies
설명:
IGBT Transistors
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IKY40N120CH3XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO247-4-2
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
80 A
Pd - 전력 손실:
500 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
포장:
튜브
연속 수집가 현재 IC 최대:
80 A
상표:
인피니언 테크놀로지스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
240
하위 카테고리:
IGBT
부품 번호 별칭:
IKY40N120CH3 SP001465124
단위 무게:
0.211644 oz
Tags
IKY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Igbt, 1.2KV, 80A, 500W, TO-247
***ark
Igbt, 1.2Kv, 80A, 500W, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts. | Summary of Features: Extremely low control inductance loop with extra emitter pin for driver feedback; 20% reduction in total switching losses compared to 3pin package using same technology; Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint | Benefits: Highest efficiency with lowest switching losses 1200 V IGBT; High power density 1200V discrete IGBT; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247 | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
부분 # 제조 설명 재고 가격
IKY40N120CH3XKSA1
DISTI # IKY40N120CH3XKSA1-ND		Infineon Technologies AGIGBT 1200V 80A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		140In Stock
  • 720:$6.8044
  • 240:$7.8141
  • 25:$8.9992
  • 10:$9.4380
  • 1:$10.4500
IKY40N120CH3XKSA1
DISTI # IKY40N120CH3XKSA1		Infineon Technologies AGIGBT PRODUCTS - Rail/Tube (Alt: IKY40N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$5.2900
  • 1440:$5.3900
  • 960:$5.4900
  • 480:$5.7900
  • 240:$5.9900
IKY40N120CH3XKSA1
DISTI # SP001465124		Infineon Technologies AGIGBT PRODUCTS (Alt: SP001465124)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€4.2900
  • 500:€4.5900
  • 100:€4.7900
  • 50:€4.9900
  • 25:€5.1900
  • 10:€5.3900
  • 1:€5.8900
IKY40N120CH3XKSA1
DISTI # 93AC7074		Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes217
  • 500:$6.5400
  • 250:$7.1700
  • 100:$7.5100
  • 50:$8.0900
  • 25:$8.6600
  • 10:$9.0800
  • 1:$10.0400
IKY40N120CH3XKSA1
DISTI # 726-IKY40N120CH3XKSA		Infineon Technologies AGIGBT Transistors
RoHS: Compliant		156
  • 1:$9.9400
  • 10:$8.9900
  • 25:$8.5700
  • 100:$7.4400
  • 250:$7.1000
  • 500:$6.4800
IKY40N120CH3XKSA1
DISTI # 2986351		Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247
RoHS: Compliant		217
  • 10:$11.7100
  • 5:$13.5800
  • 1:$14.6000
IKY40N120CH3XKSA1
DISTI # 2986351		Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247220
  • 100:£5.4000
  • 50:£5.8100
  • 10:£6.2100
  • 5:£7.2000
  • 1:£7.7300
영상 부분 # 설명
FS45MR12W1M1B11BOMA1

Mfr.#: FS45MR12W1M1B11BOMA1

OMO.#: OMO-FS45MR12W1M1B11BOMA1

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IKW40N120CS6XKSA1

Mfr.#: IKW40N120CS6XKSA1

OMO.#: OMO-IKW40N120CS6XKSA1

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FGH40T120SQDNL4

Mfr.#: FGH40T120SQDNL4

OMO.#: OMO-FGH40T120SQDNL4

 IGBT Transistors IGBT 1200V 40A UFS
IKY40N120CS6XKSA1

Mfr.#: IKY40N120CS6XKSA1

OMO.#: OMO-IKY40N120CS6XKSA1

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NGTB40N120S3WG

Mfr.#: NGTB40N120S3WG

OMO.#: OMO-NGTB40N120S3WG

 IGBT Transistors IGBT 1200V 40A FS3 LOW VF
IKQ40N120CH3XKSA1

Mfr.#: IKQ40N120CH3XKSA1

OMO.#: OMO-IKQ40N120CH3XKSA1

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IKQ40N120CT2XKSA1

Mfr.#: IKQ40N120CT2XKSA1

OMO.#: OMO-IKQ40N120CT2XKSA1

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IRF100P218XKMA1

Mfr.#: IRF100P218XKMA1

OMO.#: OMO-IRF100P218XKMA1

 MOSFET TRENCH_MOSFETS
IKQ40N120CT2XKSA1

Mfr.#: IKQ40N120CT2XKSA1

OMO.#: OMO-IKQ40N120CT2XKSA1-INFINEON-TECHNOLOGIES

 IGBT HS SW 1200V 40A TO-247-3
IKY40N120CS6XKSA1

Mfr.#: IKY40N120CS6XKSA1

OMO.#: OMO-IKY40N120CS6XKSA1-INFINEON-TECHNOLOGIES

 IGBT 1200V 40A TO247PLUS
유효성
재고:
156
주문 시:
2139
수량 입력:
IKY40N120CH3XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$9.94
US$9.94
10
US$8.99
US$89.90
25
US$8.57
US$214.25
100
US$7.44
US$744.00
250
US$7.10
US$1 775.00
500
US$6.48
US$3 240.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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