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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI9435BDY-T1-E3 DISTI # V72:2272_07432065 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 1541 |
|
| SI9435BDY-T1-E3 DISTI # V36:1790_07432065 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI9435BDY-T1-E3 DISTI # 32655286 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 7500 |
|
| SI9435BDY-T1-E3 DISTI # 32395911 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 6493 |
|
| SI9435BDY-T1-E3 DISTI # 33259591 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI9435BDY-T1-E3 DISTI # 32596230 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 1541 |
|
| SI9435BDY-T1-E3 DISTI # 30608737 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 207 |
|
| SI9435BDY-T1-E3 DISTI # SI9435BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R (Alt: SI9435BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 4071 |
|
| SI9435BDY-T1-E3 DISTI # SI9435BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9435BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI9435BDY-T1-E3 DISTI # SI9435BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R (Alt: SI9435BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 |
|
| SI9435BDY-T1-E3 DISTI # 06J8231 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J8231) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
|
| SI9435BDY-T1-E3 DISTI # 35K3498 | Vishay Intertechnologies | P CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.07ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,No. of Pins:8PinsRoHS Compliant: Yes | 0 |
|
| SI9435BDY-T1-E3 DISTI # 06J8231 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.07ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:2.5W RoHS Compliant: Yes | 2055 |
|
| SI9435BDY-T1-E3 DISTI # 70026299 | Vishay Siliconix | P-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant | 0 |
|
| SI9435BDY-T1-E3 | Vishay Intertechnologies | Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant | 5000Reel |
|
| SI9435BDY-T1-E3 | Vishay Intertechnologies | Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant | 2807Cut Tape/Mini-Reel |
|
| SI9435BDY-T1-E3 | Vishay Intertechnologies | 3870 | ||
| SI9435BDY-T1-E3 | Vishay Intertechnologies | 4019 | ||
| SI9435BDY-T1-E3 | Vishay Intertechnologies | 3137 | ||
| SI9435BDY-T1-E3CT-ND | Vishay Intertechnologies | 100 | ||
| SI9435BDY-T1-E3 | Vishay Siliconix | MOSFET Transistor, P-Channel, SO | 381 |
|
| SI9435BDY-T1-E3 | Vishay Siliconix | MOSFET Transistor, P-Channel, SO | 13 |
|
| SI9435BDY-T1-E3 | Vishay Intertechnologies | MOSFET Transistor, P-Channel, SO | 3096 |
|
| SI9435BDY-T1-E3 | N/A | MOSFET Transistor, P-Channel, SO | 1373 |
|
| SI9435BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5635 | |
| SI9435BDY-T1-E3 DISTI # C1S803601298597 | Vishay Intertechnologies | MOSFETs RoHS: Compliant | 207 |
|
| SI9435BDY-T1-E3. | Vishay Intertechnologies | MOSFET 30V 5.7A 0.042Ohm | Americas - 1750 |
|
| SI9435BDY-T1-E3 DISTI # XSFP00000011539 | Vishay Siliconix | RoHS: Compliant | 6516 in Stock0 on Order |
|
| SI9435BDY-T1-E3 DISTI # XSKDRABV0041549 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 2.2A I(D),20V, 1-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET, TO-236AB RoHS: Compliant | 4071 in Stock0 on Order |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI9435BDY-T1-E3 OMO.#: OMO-SI9435BDY-T1-E3 |
MOSFET 30V 5.7A 0.042Ohm |
|
|
Mfr.#: SI9435BDY-T1-GE3 OMO.#: OMO-SI9435BDY-T1-GE3 |
MOSFET 30V 5.7A 2.5W 42mohm @ 10V |
|
Mfr.#: SI9435BDY-E3 OMO.#: OMO-SI9435BDY-E3-1190 |
Transistor: P-MOSFET, unipolar, -30V, -4.6A, 2.5W, SO8 |
|
Mfr.#: SI9435BDY-T1-E3 OMO.#: OMO-SI9435BDY-T1-E3-VISHAY |
MOSFET P-CH 30V 4.1A 8-SOIC |
|
|
Mfr.#: SI9435BDY-T1-E3 , IMP811 |
신규 및 오리지널 |
|
|
Mfr.#: SI9435BDY-T1-E3(9435B) |
신규 및 오리지널 |
|
|
Mfr.#: SI9435BDY-T1-E3. OMO.#: OMO-SI9435BDY-T1-E3--1190 |
MOSFET 30V 5.7A 0.042Ohm |
|
|
Mfr.#: SI9435BDY-T1-GE3 OMO.#: OMO-SI9435BDY-T1-GE3-VISHAY |
MOSFET P-CH 30V 4.1A 8-SOIC |
|
|
Mfr.#: SI9435BDY-TI-E3 OMO.#: OMO-SI9435BDY-TI-E3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI9435BDYT1E3 OMO.#: OMO-SI9435BDYT1E3-1190 |
Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |