IPB60R180P7ATMA1

Mfr. #:: IPB60R180P7ATMA1
제조사:: Infineon Technologies
설명:: MOSFET TO263-3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB60R180P7ATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IPB60R180P7ATMA1 추가 정보

제품 속성
속성 값

제조사

제품 카테고리: IC 칩

시리즈: -

포장: 대부분

부품 상태: 활동적인

커넥터 스타일: 디서브

커넥터 유형: 리셉터클, 암 소켓

직위 수: 15

행 수: 2

쉘 크기, 커넥터 레이아웃: 2 (DA, A)

접점 유형: 신호

장착 유형: 패널 실장, 스루홀

플랜지 피처: 하우징/쉘(비나사)

종료: 와이어 랩

특징: -

쉘 재질, 마감: 강철

접점 마침: -

접점 마감 두께: -

침입 방지: -

재료 가연성 등급: UL94 V-0

현재 등급: -

작동 온도: -55°C ~ 125°C

전압 정격: -

색상: -

문의 양식: -

하우징 자재: 폴리부틸렌 테레프탈레이트(PBT), 폴리에스테르, 유리 충전

와이어 게이지: -

접촉 재료: 구리 합금

백셋 간격: -

Tags: IPB60R18, IPB60R1, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R180P7ATMA1 설명

***ure Electronics: Single N-Channel 600 V 180 mOhm CoolMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 18A

***ronik: CoolMOS 600V 18A 180mOhm TO263

***i-Key: MOSFET TO263-3

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 18A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 18A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:72W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 600V, 18A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:72W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPB60R180P7ATMA1 추가 정보

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

부분 #	제조	설명	재고	가격
IPB60R180P7ATMA1 DISTI # V72:2272_18787578	Infineon Technologies AG	HIGH POWER_NEW	2000	1000:$1.3173 500:$1.4452 250:$1.6087 100:$1.8899 25:$2.1059 10:$2.3399 1:$3.4378
IPB60R180P7ATMA1 DISTI # V36:1790_18787578	Infineon Technologies AG	HIGH POWER_NEW	0
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1TR-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	5000:$1.1403 2000:$1.1546 1000:$1.2401
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1CT-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1000In Stock	500:$1.5416 100:$1.8763 10:$2.3340 1:$2.6000
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1000In Stock	500:$1.5416 100:$1.8763 10:$2.3340 1:$2.6000
IPB60R180P7ATMA1 DISTI # 33647293	Infineon Technologies AG	HIGH POWER_NEW	2000	1000:$1.3173 500:$1.4452 250:$1.6087 100:$1.8899 25:$2.1059 10:$2.3399 7:$3.4378
IPB60R180P7ATMA1 DISTI # 33655373	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$1.2217
IPB60R180P7ATMA1 DISTI # IPB60R180P7ATMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPB60R180P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.0339 6000:$1.0529 4000:$1.0899 2000:$1.1309 1000:$1.1729
IPB60R180P7ATMA1 DISTI # 49AC7997	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	0	500:$1.4300 250:$1.5400 100:$1.6400 50:$1.7700 25:$1.9100 10:$2.0500 1:$2.4100
IPB60R180P7ATMA1 DISTI # 726-IPB60R180P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	10000	1:$2.3900 10:$2.0300 100:$1.6200 500:$1.4200 1000:$1.1800
IPB60R180P7ATMA1 DISTI # 2841645	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-263	0	500:£1.1000 250:£1.1800 100:£1.2600 10:£1.5900 1:£2.1100
IPB60R180P7ATMA1 DISTI # 2841645	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-263 RoHS: Compliant	0	1000:$1.6300 500:$1.6700 250:$1.7600 100:$1.8600 10:$2.1000 1:$2.2500

관련 상품

영상	부분 #	설명
	Mfr.#: IPB60R180P7ATMA1 OMO.#: OMO-IPB60R180P7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPB60R180C7ATMA1 OMO.#: OMO-IPB60R180C7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPB60R180C7ATMA1 OMO.#: OMO-IPB60R180C7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13A TO263-3
	Mfr.#: IPB60R180P7ATMA1 OMO.#: OMO-IPB60R180P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET TO263-3
	Mfr.#: IPB60R180P7ATMA1-CUT TAPE OMO.#: OMO-IPB60R180P7ATMA1-CUT-TAPE-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3000
수량 입력:

IPB60R180P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.55~~; ~~US$1.55~~

10: ~~US$1.47~~; ~~US$14.73~~

100: ~~US$1.40~~; ~~US$139.58~~

500: ~~US$1.32~~; ~~US$659.10~~

1000: ~~US$1.24~~; ~~US$1 240.70~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IPB60R18 3
IPB60R1 41
IPB60R 100
IPB60 105
IPB6 183
IPB 1339

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IPB60R180P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes