IPDD60R102G7XTMA1

Mfr. #:: IPDD60R102G7XTMA1
제조사:: Infineon Technologies
설명:: MOSFET HIGH POWER_NEW
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPDD60R102G7XTMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PG-HDSOP-10

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 23 A

Rds On - 드레인 소스 저항:: 102 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 34 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 139 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

상표:: 인피니언 테크놀로지스

가을 시간:: 4 ns

상품 유형:: MOSFET

상승 시간:: 5 ns

공장 팩 수량:: 1700

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 60 ns

일반적인 켜기 지연 시간:: 18 ns

부품 번호 별칭:: IPDD60R102G7 SP001632832

Tags: IPDD60R1, IPDD6, IPDD, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPDD60R102G7XTMA1 설명

***ure Electronics: N-Channel 600 V 102 mOhm 34 nC CoolMOS G7 Power Transistor - HDSOP-10

***ical: Trans MOSFET N-CH 600V 23A 10-Pin HDSOP EP T/R

***i-Key: MOSFET NCH 650V 66A PG-HDSOP-10

***ronik: N-CH 600V 23A 88mOhm HDSOP-10

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 23A, Hdsop; Transistor Polarity:n Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.088Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 23A, HDSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:139W; Transistor Case Style:HDSOP; No. of Pins:10Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Gold Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 600V, 23A, HDSOP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.088ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:139W; Modello Case Transistor:HDSOP; No. di Pin:10Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Gold Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

부분 #	제조	설명	재고	가격
IPDD60R102G7XTMA1 DISTI # V72:2272_19084635	Infineon Technologies AG	Trans MOSFET N-CH 600V 23A 10-Pin HDSOP EP T/R	0
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1CT-ND	Infineon Technologies AG	MOSFET NCH 650V 66A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	490In Stock	500:$3.6173 100:$4.4672 10:$5.4480 1:$6.1000
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1DKR-ND	Infineon Technologies AG	MOSFET NCH 650V 66A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	490In Stock	500:$3.6173 100:$4.4672 10:$5.4480 1:$6.1000
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1TR-ND	Infineon Technologies AG	MOSFET NCH 650V 66A PG-HDSOP-10 RoHS: Compliant Min Qty: 1700 Container: Tape & Reel (TR)	On Order	3400:$2.8138 1700:$2.9619
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPDD60R102G7XTMA1) RoHS: Compliant Min Qty: 1700 Container: Reel	Americas - 0	1700:$2.6900 3400:$2.5900 6800:$2.4900 10200:$2.3900 17000:$2.3900
IPDD60R102G7XTMA1 DISTI # SP001632832	Infineon Technologies AG	HIGH POWER_NEW (Alt: SP001632832) RoHS: Compliant Min Qty: 1700	Europe - 0	1700:€3.3900 3400:€2.7900 6800:€2.4900 10200:€2.3900 17000:€2.1900
IPDD60R102G7XTMA1 DISTI # 59AC7041	Infineon Technologies AG	MOSFET, N-CH, 600V, 23A, HDSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.088ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	475	1000:$2.6900 500:$3.1900 250:$3.5500 100:$3.7500 50:$3.9400 25:$4.1300 10:$4.3200 1:$5.0900
IPDD60R102G7XTMA1 DISTI # 726-IPDD60R102G7XTM1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	470	1:$5.0900 10:$4.3200 100:$3.7500 250:$3.5500 500:$3.1900 1000:$2.6900 1700:$2.5500
IPDD60R102G7XTMA1	Infineon Technologies AG	650v, 66a, 102mOhms, DDPAK Mosfet RoHS: Compliant	30Cut Tape/Mini-Reel	1:$4.3200 50:$3.2100 100:$3.0400 250:$2.8300 500:$2.6900
IPDD60R102G7XTMA1 DISTI # 2888463	Infineon Technologies AG	MOSFET, N-CH, 600V, 23A, HDSOP RoHS: Compliant	475	500:$5.3800 100:$6.6400 10:$8.0900 1:$9.0600
IPDD60R102G7XTMA1 DISTI # 2888463	Infineon Technologies AG	MOSFET, N-CH, 600V, 23A, HDSOP RoHS: Compliant	475	500:£2.4900 250:£2.7600 100:£2.9200 10:£3.3600 1:£4.4100

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IPDD60R102G7XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes