HGTG11N120CN

Mfr. #:: HGTG11N120CN
제조사:: ON Semiconductor / Fairchild
설명:: IGBT Transistors 43A 1200V N-Ch
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HGTG11N120CN 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: E

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 1200 V

수집기-이미터 포화 전압:: 2.1 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 43 A

Pd - 전력 손실:: 298 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: HGTG11N120CN

포장:: 튜브

연속 수집가 현재 IC 최대:: 43 A

키:: 20.82 mm

길이:: 15.87 mm

너비:: 4.82 mm

상표:: 온세미컨덕터 / 페어차일드

지속적인 수집가 전류:: 55 A

게이트-이미터 누설 전류:: +/- 250 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 150

하위 카테고리:: IGBT

부품 번호 별칭:: HGTG11N120CN_NL

단위 무게:: 0.225401 oz

Tags: HGTG11N120C, HGTG11N12, HGTG11N1, HGTG11, HGTG1, HGTG, HGT

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG11N120CN 설명

***ical: Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: PWR IGBT 35A 1200V NPT N-CHANNEL TO-247

***rchild Semiconductor: The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Market price

부분 #	제조	설명	재고	가격
HGTG11N120CND DISTI # 33354010	ON Semiconductor	NPTPIGBT TO247 43A 1200V	4050	450:$2.7500
HGTG11N120CND DISTI # HGTG11N120CND-ND	ON Semiconductor	IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	208In Stock	2700:$1.7690 900:$2.2025 450:$2.4545 25:$2.9852 10:$3.1580 1:$3.5200
HGTG11N120CN DISTI # HGTG11N120CN-ND	ON Semiconductor	IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 300 Container: Tube	Limited Supply - Call
HGTG11N120CND DISTI # V36:1790_06359382	ON Semiconductor	NPTPIGBT TO247 43A 1200V	0	450000:$1.8660 225000:$1.8700 45000:$2.3190 4500:$3.1670 450:$3.3120
HGTG11N120CND DISTI # HGTG11N120CND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 0	60:$1.4900 90:$1.4900 150:$1.4900 300:$1.4900 30:$1.5900
HGTG11N120CND DISTI # HGTG11N120CND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 1	Europe - 0	500:€1.2900 1000:€1.2900 100:€1.3900 25:€1.4900 50:€1.4900 10:€1.6900 1:€1.7900
HGTG11N120CND DISTI # 58K8900	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$2.2100 250:$2.4500 100:$2.5700 50:$2.6900 25:$2.8200 10:$2.9400 1:$3.4400
HGTG11N120CND DISTI # 58K8900	ON Semiconductor	SINGLE IGBT, 1.2KV, 43A,DC Collector Current:43A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	858	500:$2.2100 250:$2.4500 100:$2.5700 50:$2.6900 25:$2.8200 10:$2.9400 1:$3.4400
HGTG11N120CN DISTI # 512-HGTG11N120CN	ON Semiconductor	IGBT Transistors 43A 1200V N-Ch RoHS: Compliant	0
HGTG11N120CND DISTI # 512-HGTG11N120CND	ON Semiconductor	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde RoHS: Compliant	449	1:$3.7300 10:$3.1700 100:$2.7500 250:$2.6100 500:$2.3400 1000:$1.9700 2500:$1.8700
HGTG11N120CND	ON Semiconductor	HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant	7200Tube	10:$2.4500 50:$2.1300 100:$2.0700 250:$2.0100 500:$1.9600
HGTG11N120CN	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	1098	1000:$2.0100 500:$2.1200 100:$2.2100 25:$2.3000 1:$2.4800
HGTG11N120CND DISTI # HGTG11N120CND	ON Semiconductor	Transistor: IGBT,1.2kV,22A,298W,TO247-3	83	30:$2.7000 10:$3.0100 3:$3.7400 1:$4.3500
HGTG11N120CND	Fairchild Semiconductor Corporation	RoHS: Compliant	200
HGTG11N120CND DISTI # XSFP00000009698	Fairchild Semiconductor Corporation	RoHS: Compliant	5850 in Stock0 on Order	5850:$3.2700 450:$3.5000
HGTG11N120CND DISTI # XSKDRABV0037819	ON SEMICONDUCTOR	RoHS: Compliant	360 in Stock0 on Order	360:$2.0200 231:$2.1600
HGTG11N120CND	ON Semiconductor	1200V NPT IGBT	1350	1:$4.2000 100:$2.6800 500:$2.2100 1000:$2.0400
HGTG11N120CND DISTI # 1611490	ON Semiconductor	IGBT, N RoHS: Compliant	1431	500:$3.1700 250:$3.5400 100:$3.7300 10:$4.2900 1:$5.0600
HGTG11N120CND DISTI # 1611490	ON Semiconductor	IGBT, N	1895	500:£1.6000 250:£1.8000 100:£1.8800 10:£2.1700 1:£2.8800

관련 상품

영상	부분 #	설명
	Mfr.#: HGTG11N120CND OMO.#: OMO-HGTG11N120CND-ON-SEMICONDUCTOR	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
	Mfr.#: HGTG11N1120CND OMO.#: OMO-HGTG11N1120CND-1190	신규 및 오리지널
	Mfr.#: HGTG11N120 OMO.#: OMO-HGTG11N120-1190	신규 및 오리지널
	Mfr.#: HGTG11N120CN OMO.#: OMO-HGTG11N120CN-ON-SEMICONDUCTOR	IGBT 1200V 43A 298W TO247
	Mfr.#: HGTG11N120CND 11N120CND OMO.#: OMO-HGTG11N120CND-11N120CND-1190	신규 및 오리지널
	Mfr.#: HGTG11N120CND,HGTG11N120 OMO.#: OMO-HGTG11N120CND-HGTG11N120-1190	신규 및 오리지널
	Mfr.#: HGTG11N120CND? OMO.#: OMO-HGTG11N120CND--1190	NPTPIGBT TO247 43A 1200V
	Mfr.#: HGTG11N120CND_NL OMO.#: OMO-HGTG11N120CND-NL-1190	신규 및 오리지널
	Mfr.#: HGTG11N120CNP OMO.#: OMO-HGTG11N120CNP-1190	신규 및 오리지널
	Mfr.#: HGTG11N20CND OMO.#: OMO-HGTG11N20CND-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 1000
수량 입력:

HGTG11N120CN의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

HGTG11N120C 8
HGTG11N12 10
HGTG11N1 11
HGTG11 13
HGTG1 48
HGTG 150
HGT 430

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HGTG11N120CN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes