CSD13201W10

Mfr. #:: CSD13201W10
설명:: Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CSD13201W10 데이터 시트
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ECAD Model:
추가 정보:: CSD13201W10 추가 정보 CSD13201W10 Product Details

제품 속성
속성 값

제조사: 텍사스 인스트루먼트

제품 카테고리: FET - 단일

시리즈: 넥스펫

포장: Digi-ReelR 대체 패키징

장착 스타일: SMD/SMT

상표명: 넥스펫

패키지 케이스: 4-UFBGA, DSBGA

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 4-DSBGA (1x1)

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 1.2W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 12V

입력-커패시턴스-Ciss-Vds: 462pF @ 6V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 1.6A (Ta)

Rds-On-Max-Id-Vgs: 34 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1.1V @ 250μA

Gate-Charge-Qg-Vgs: 2.9nC @ 4.5V

Pd 전력 손실: 1.2 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 9.7 ns

상승 시간: 5.9 ns

Vgs 게이트 소스 전압: 8 V

Id-연속-드레인-전류: 1.6 A

Vds-드레인-소스-고장-전압: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 800 mV

Rds-On-Drain-Source-Resistance: 34 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 14.4 ns

일반 켜기 지연 시간: 3.9 ns

Qg-Gate-Charge: 2.3 nC

순방향 트랜스컨덕턴스-최소: 23 S

채널 모드: 상승

Tags: CSD132, CSD13, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD13201W10 설명

***as Instruments: 12V, N ch NexFET MOSFET™, single WLP 1.0x1.0, 34mOhm 4-DSBGA -55 to 150

***p One Stop Global: Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R

***i-Key: MOSFET N-CH 12V 1.6A 4DSBGA

***ark: 12V N Ch Mosfet

CSD13201W10 추가 정보

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

부분 #	설명	재고	가격
CSD13201W10 DISTI # V72:2272_07248711	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R RoHS: Compliant	234	100:$0.1918 25:$0.3164 10:$0.3515 1:$0.4655
CSD13201W10 DISTI # 296-41412-1-ND	MOSFET N-CH 12V 1.6A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	189531In Stock	1000:$0.1713 500:$0.2284 100:$0.3331 10:$0.4850 1:$0.6200
CSD13201W10 DISTI # 296-41412-6-ND	MOSFET N-CH 12V 1.6A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	189531In Stock	1000:$0.1713 500:$0.2284 100:$0.3331 10:$0.4850 1:$0.6200
CSD13201W10 DISTI # 296-41412-2-ND	MOSFET N-CH 12V 1.6A 4DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	186000In Stock	15000:$0.1340 6000:$0.1432 3000:$0.1525
CSD13201W10 DISTI # 25768664	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R RoHS: Compliant	234	100:$0.1918 60:$0.3164
CSD13201W10 DISTI # CSD13201W10	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD13201W10) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1269 6000:$0.1219 12000:$0.1179 18000:$0.1129 30000:$0.1079
CSD13201W10 DISTI # CSD13201W10	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R (Alt: CSD13201W10) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD13201W10	N-Channel NexFET&#153,Power MOSFET	5765	1000:$0.1000 750:$0.1100 500:$0.1300 250:$0.1600 100:$0.1800 25:$0.2100 10:$0.2200 1:$0.2500
CSD13201W10 DISTI # 595-CSD13201W10	MOSFET N-CH NexFET Pwr MOSFET RoHS: Compliant	33222	1:$0.4900 10:$0.3700 100:$0.2020 1000:$0.1520 3000:$0.1310 9000:$0.1220 24000:$0.1120
CSD13201W10 DISTI # C1S746203525749	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R RoHS: Compliant	234	100:$0.1918 25:$0.3164

관련 상품

영상	부분 #	설명
	Mfr.#: CSD13381F4 OMO.#: OMO-CSD13381F4	MOSFET 12V N-CH Pwr MOSFET
	Mfr.#: CSD13306WT OMO.#: OMO-CSD13306WT	MOSFET 12V N-Channel NexFET Power MOSFET
	Mfr.#: CSD13202Q2 OMO.#: OMO-CSD13202Q2	MOSFET N-CH Power MOSFET 12V 9.3mohm
	Mfr.#: CSD13383F4T OMO.#: OMO-CSD13383F4T	MOSFET 12V N-Channel FemtoFET MOSFET
	Mfr.#: CSD13385F5 OMO.#: OMO-CSD13385F5	MOSFET 12V, N ch NexFET MOSFETG , single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD13202Q2/TI OMO.#: OMO-CSD13202Q2-TI-TEXAS-INSTRUMENTS	신규 및 오리지널
	Mfr.#: CSD13381F4T OMO.#: OMO-CSD13381F4T-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET 12V,N-Ch FemtoFET MOSFET
	Mfr.#: CSD13302W OMO.#: OMO-CSD13302W-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
	Mfr.#: CSD13381F4 OMO.#: OMO-CSD13381F4-TEXAS-INSTRUMENTS	MOSFET N-CH 12V 2.1A 3PICOSTAR
	Mfr.#: CSD13383F4 OMO.#: OMO-CSD13383F4-TEXAS-INSTRUMENTS	MOSFET N-CH 12V 3PICOSTAR

유효성

재고:: Available
주문 시:: 3500
수량 입력:

CSD13201W10의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.15~~; ~~US$0.15~~

10: ~~US$0.14~~; ~~US$1.42~~

100: ~~US$0.14~~; ~~US$13.50~~

500: ~~US$0.13~~; ~~US$63.75~~

1000: ~~US$0.12~~; ~~US$120.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

CSD132 4
CSD13 24
CSD1 359
CSD 800

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CSD13201W10

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes