S29GL01GS10TFI010

S29GL01GS10TFI010
Mfr. #:
S29GL01GS10TFI010
제조사:
Cypress Semiconductor
설명:
NOR Flash 1G 3V 100ns Parallel NOR Flash
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S29GL01GS10TFI010 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
S29GL01GS10TFI010 추가 정보 S29GL01GS10TFI010 Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
NOR 플래시
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
TSOP-56
시리즈:
S29GL01G/512/256/128S
메모리 크기:
1 Gbit
인터페이스 유형:
평행 한
조직:
64 M x 16
타이밍 유형:
비동기
데이터 버스 폭:
16 bit
공급 전압 - 최소:
2.7 V
공급 전압 - 최대:
3.6 V
공급 전류 - 최대:
100 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
포장:
쟁반
메모리 유형:
도 아니다
속도:
100 ns
건축학:
상표:
사이프러스 반도체
습기에 민감한:
상품 유형:
NOR 플래시
공장 팩 수량:
91
하위 카테고리:
메모리 및 데이터 저장
상표명:
미러비트 이클립스
단위 무게:
0.607206 oz
Tags
S29GL01GS10TFI01, S29GL01GS10TFI, S29GL01GS10T, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GL-S Series 1 Gb (64 M x 16) 3.6 V 100 ns Surface Mount Flash Memory - TSOP-56
***et
NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 100ns 56-Pin TSOP Tray
***ment14 APAC
MEMORY, FLASH, 1GB, 3V, 56TSOP; Memory Size:1Gbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:TSOP; No. of Pins:56; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); IC Generic Number:S29GL01GS
MirrorBit® NOR GL Flash Memory Device - EXPANSION
Cypress has expanded it's offering of MirrorBit® NOR GL Flash Memory Devices to include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption.Learn MoreCypress MirrorBit® GL NOR Flash family is optimized for the voltage, density, cost-per-bit, reliability, performance, and scalability needs of a wide variety of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.View the entire MirrorBit® NOR GL Series
MirrorBit® NOR GL Flash Memory Device
Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
부분 # 제조 설명 재고 가격
S29GL01GS10TFI010
DISTI # 1274-1016-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 1
Container: Tray
On Order
  • 1001:$8.0845
  • 546:$8.3632
  • 273:$8.4500
  • 182:$8.8898
  • 91:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS10TFI010
DISTI # V99:2348_07029526
Cypress SemiconductorNOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 56-Pin TSOP Tray
RoHS: Compliant
91
  • 1:$9.3750
S29GL01GS10TFI010
DISTI # 39T5694
Cypress SemiconductorFLASH MEMORY, 1024MBIT, 100NS, 56-TSOP,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:64M x 16bit,IC Interface Type:Parallel,Memory Case Style:TSOP,No. of Pins:56Pins,Clock Frequency:- RoHS Compliant: Yes0
  • 250:$7.6500
  • 100:$7.8300
  • 50:$8.6600
  • 25:$8.7100
  • 10:$8.9100
  • 1:$9.6300
S29GL01GS10TFI010SpansionFlash, 128MX8, 100ns, PDSO56
RoHS: Compliant
58
  • 1000:$8.9300
  • 500:$9.4000
  • 100:$9.7900
  • 25:$10.2100
  • 1:$11.0000
S29GL01GS10TFI010
DISTI # 797-S29GL01GS10TFI01
Cypress SemiconductorNOR Flash 1G 3V 100ns Parallel NOR Flash
RoHS: Compliant
316
  • 1:$9.6200
  • 10:$8.9000
  • 25:$8.7000
  • 50:$8.6500
  • 100:$7.8200
  • 250:$7.6500
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TRS3232EQPWRQ1

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Mfr.#: TPS51200DRCT

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LDO Voltage Regulators Sink/Source DDR Term Regulato
유효성
재고:
Available
주문 시:
1984
수량 입력:
S29GL01GS10TFI010의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$9.62
US$9.62
10
US$8.90
US$89.00
25
US$8.70
US$217.50
50
US$8.65
US$432.50
100
US$7.82
US$782.00
250
US$7.65
US$1 912.50
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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