AS4C256M16D3LB-10BIN

AS4C256M16D3LB-10BIN
Mfr. #:
AS4C256M16D3LB-10BIN
제조사:
Alliance Memory
설명:
DRAM 4G, DDR3, 256M X 16, 1.35V, 96-BALL FBGA, 1866MHZ, INDUSTRIAL TEMP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
AS4C256M16D3LB-10BIN 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
AS4C256M16D3LB-10BIN 추가 정보
제품 속성
속성 값
제조사:
얼라이언스 메모리
제품 카테고리:
적은 양
RoHS:
Y
유형:
SDRAM - DDR3
데이터 버스 폭:
16 bit
조직:
256 M x 16
패키지/케이스:
FBGA-96
메모리 크기:
4 Gbit
최대 클록 주파수:
933 MHz
공급 전압 - 최대:
1.575 V
공급 전압 - 최소:
1.283 V
공급 전류 - 최대:
80 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 95 C
시리즈:
AS4C256M16D3LB-10
상표:
얼라이언스 메모리
장착 스타일:
SMD/SMT
습기에 민감한:
상품 유형:
적은 양
공장 팩 수량:
180
하위 카테고리:
메모리 및 데이터 저장
Tags
AS4C256M16D3LB-10, AS4C256M16D3LB, AS4C256M16D3L, AS4C256M1, AS4C256M, AS4C25, AS4C2, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Transistors gavno, take it. I ordered 10 pcs of all the fuflo, the amplifier put 15 seconds plays and is cut out, i went to buy in the store new all the norms

    2019-04-28
    A***n
    A***n
    RU

    The seller 5 + for excellent work. Handles of excellent quality. I recommend. Thank you.

    2019-08-22
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
영상 부분 # 설명
AS4C256M16D3B-12BINTR

Mfr.#: AS4C256M16D3B-12BINTR

OMO.#: OMO-AS4C256M16D3B-12BINTR

DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
AS4C256M16D3LB-12BANTR

Mfr.#: AS4C256M16D3LB-12BANTR

OMO.#: OMO-AS4C256M16D3LB-12BANTR

DRAM 4G 1.35V 800MHz 256Mx16 DDR3 A-Temp
AS4C256M16D3L-12BAN

Mfr.#: AS4C256M16D3L-12BAN

OMO.#: OMO-AS4C256M16D3L-12BAN

DRAM DDR3, 4GB. 1.35V 800MHz,256M x 16
AS4C256M16D3L-12BANTR

Mfr.#: AS4C256M16D3L-12BANTR

OMO.#: OMO-AS4C256M16D3L-12BANTR

DRAM DDR3, 4GB. 1.35V 800MHz,256M x 16
AS4C256M16D3B-12BCN

Mfr.#: AS4C256M16D3B-12BCN

OMO.#: OMO-AS4C256M16D3B-12BCN-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
AS4C256M16D312BIN

Mfr.#: AS4C256M16D312BIN

OMO.#: OMO-AS4C256M16D312BIN-1190

신규 및 오리지널
AS4C256M16D3L-12BCN

Mfr.#: AS4C256M16D3L-12BCN

OMO.#: OMO-AS4C256M16D3L-12BCN-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
AS4C256M16D3LB-12BINTR

Mfr.#: AS4C256M16D3LB-12BINTR

OMO.#: OMO-AS4C256M16D3LB-12BINTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
AS4C256M16D3A-12BANTR

Mfr.#: AS4C256M16D3A-12BANTR

OMO.#: OMO-AS4C256M16D3A-12BANTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C256M16D3A-12BINTR

Mfr.#: AS4C256M16D3A-12BINTR

OMO.#: OMO-AS4C256M16D3A-12BINTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
유효성
재고:
180
주문 시:
2163
수량 입력:
AS4C256M16D3LB-10BIN의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$10.45
US$10.45
10
US$9.68
US$96.80
25
US$9.46
US$236.50
50
US$9.41
US$470.50
100
US$8.28
US$828.00
250
US$7.87
US$1 967.50
500
US$7.74
US$3 870.00
1000
US$7.53
US$7 530.00
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