IRF7471PBF

IRF7471PBF
Mfr. #:
IRF7471PBF
제조사:
Infineon / IR
설명:
MOSFET 40V 1 N-CH HEXFET 13mOhms 21nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF7471PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7471PBF DatasheetIRF7471PBF Datasheet (P4-P6)IRF7471PBF Datasheet (P7-P8)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SO-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
40 V
Id - 연속 드레인 전류:
10 A
Rds On - 드레인 소스 저항:
16 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
21 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
2.5 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
1.75 mm
길이:
4.9 mm
트랜지스터 유형:
1 N-Channel
유형:
Smps MOSFET
너비:
3.9 mm
상표:
인피니언 / IR
가을 시간:
4.1 ns
상품 유형:
MOSFET
상승 시간:
2.7 ns
공장 팩 수량:
4085
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
15 ns
일반적인 켜기 지연 시간:
12 ns
부품 번호 별칭:
SP001563538
단위 무게:
0.019048 oz
Tags
IRF7471, IRF747, IRF74, IRF7, IRF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 13 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-20V
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:83A; Row Pitch:6.3mm; SMD Marking:IRF7471PBF; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
부분 # 제조 설명 재고 가격
IRF7471PBF
DISTI # IRF7471PBF-ND
Infineon Technologies AGMOSFET N-CH 40V 10A 8-SOIC
RoHS: Compliant
Min Qty: 4085
Container: Tube
Limited Supply - Call
    IRF7471TRPBF
    DISTI # IRF7471PBFTR-ND
    Infineon Technologies AGMOSFET N-CH 40V 10A 8-SOIC
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)
    Limited Supply - Call
      IRF7471TRPBF
      DISTI # IRF7471PBFCT-ND
      Infineon Technologies AGMOSFET N-CH 40V 10A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      Limited Supply - Call
        IRF7471TRPBF
        DISTI # IRF7471PBFDKR-ND
        Infineon Technologies AGMOSFET N-CH 40V 10A 8-SOIC
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®
        Limited Supply - Call
          IRF7471PBF
          DISTI # 70017589
          Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 13 Milliohms,ID 10A,SO-8,PD 2.5W,VGS +/-20V
          RoHS: Compliant
          0
          • 1:$1.4500
          • 2:$1.4210
          • 5:$1.3780
          • 10:$1.3200
          • 25:$1.2330
          IRF7471PBF
          DISTI # 1013436
          Infineon Technologies AGMOSFET, N, LOGIC, SO-8
          RoHS: Compliant
          0
          • 1000:$0.8470
          • 500:$0.9030
          • 250:$0.9590
          • 100:$1.0800
          • 10:$1.4000
          • 1:$2.0300
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          유효성
          재고:
          Available
          주문 시:
          1000
          수량 입력:
          IRF7471PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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