IPW60R125P6XKSA1

Mfr. #:: IPW60R125P6XKSA1
제조사:: Infineon Technologies
설명:: MOSFET HIGH POWER PRICE/PERFORM
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPW60R125P6XKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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추가 정보:: IPW60R125P6XKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-247-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 30 A

Rds On - 드레인 소스 저항:: 113 mOhms

Vgs th - 게이트 소스 임계 전압:: 3.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 56 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 219 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 튜브

키:: 21.1 mm

길이:: 16.13 mm

시리즈:: CoolMOS P6

트랜지스터 유형:: 1 N-Channel

너비:: 5.21 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 5 ns

상품 유형:: MOSFET

상승 시간:: 9 ns

공장 팩 수량:: 240

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 44 ns

일반적인 켜기 지연 시간:: 14 ns

부품 번호 별칭:: IPW60R125P6 SP001114656

단위 무게:: 1.340411 oz

Tags: IPW60R125P, IPW60R125, IPW60R12, IPW60R1, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW60R125P6XKSA1 설명

***ure Electronics: Single N-Channel 600 V 125 mOhm 56 nC CoolMOS Power Mosfet - TO-247-3

***et: Transistor MOSFET N-Channel 600V 30A 3-Pin TO-247 Tube

***ark: Mosfet, N-Ch, 600V, 30A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ure Electronics: Single N-Channel 600 V 99 mOhm 70 nC CoolMOS Power Mosfet - TO-247-3

***ark: Mosfet, N-Ch, 600V, 37.9A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package

***ure Electronics: N-Channel 600 V 93 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247

***ark: Mosfet, N-Ch, 600V, 34A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes

***icroelectronics: N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package

***ure Electronics: N-Channel 600 V 110 mOhm Flange Mount Mdmesh DM2 Power Mosfet - TO-247

***ark: Mosfet, N-Ch, 600V, 28A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.094Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247

*** Electronics: FAIRCHILD SEMICONDUCTOR FCH125N60E MOSFET Transistor, N Channel, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 VNew

***nell: MOSFET, N-CH, 600V, 29A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

***r Electronics: Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***el Electronic: Aluminum Electrolytic Capacitors 100μF Radial, Can - SMD ±20% Tape & Reel (TR) TG 0.402 10.20mm Surface Mount Automotive 150mA CAP ALUM 100UF 20% 63V SMD

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.

***ical: Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-247 Tube

***ark: Mosfet, N-Ch, 650V, 38A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package

***r Electronics: Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, N-CH, 650V, 32A, 250W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V

IPW60R125P6XKSA1 추가 정보

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

부분 #	제조	설명	재고	가격
IPW60R125P6XKSA1 DISTI # V99:2348_06377537	Infineon Technologies AG	Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	20	1200:$2.2870 720:$2.7130 240:$3.1780 10:$3.6610 1:$4.7300
IPW60R125P6XKSA1 DISTI # IPW60R125P6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	80In Stock	2640:$2.3980 720:$2.9930 240:$3.5159 25:$4.0568 10:$4.2910 1:$4.7800
IPW60R125P6XKSA1 DISTI # 32892551	Infineon Technologies AG	Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	5000:$2.0691 2500:$2.1582 1000:$2.2671 500:$2.6928 250:$2.9997 100:$3.1581 10:$3.6432
IPW60R125P6XKSA1 DISTI # 26197262	Infineon Technologies AG	Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	20	1200:$2.4585 720:$2.9165 240:$3.4163 10:$3.9356 3:$4.6225
IPW60R125P6XKSA1 DISTI # IPW60R125P6XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW60R125P6XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$1.9900 960:$2.0900 1440:$2.0900 480:$2.1900 240:$2.2900
IPW60R125P6XKSA1 DISTI # IPW60R125P6XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Bulk (Alt: IPW60R125P6XKSA1) RoHS: Compliant Min Qty: 167 Container: Bulk	Americas - 0	835:$1.8900 1670:$1.8900 334:$1.9900 501:$1.9900 167:$2.0900
IPW60R125P6XKSA1 DISTI # IPW60R125P6	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPW60R125P6) RoHS: Compliant Min Qty: 240	Asia - 0
IPW60R125P6XKSA1 DISTI # SP001114656	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001114656) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.7900 500:€1.8900 50:€1.9900 100:€1.9900 25:€2.0900 10:€2.1900 1:€2.3900
IPW60R125P6XKSA1 DISTI # 12AC9736	Infineon Technologies AG	MOSFET, N-CH, 600V, 30A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.113ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	469	500:$2.7500 250:$3.0600 100:$3.2200 50:$3.3900 25:$3.5500 10:$3.7200 1:$4.3700
IPW60R125P6 DISTI # 726-IPW60R125P6	Infineon Technologies AG	MOSFET HIGH POWER PRICE/PERFORM RoHS: Compliant	117	1:$4.3300 10:$3.6800 100:$3.1900 250:$3.0300 500:$2.7200
IPW60R125P6XKSA1 DISTI # 726-IPW60R125P6XKSA1	Infineon Technologies AG	MOSFET HIGH POWER PRICE/PERFORM RoHS: Compliant	242	1:$4.3300 10:$3.6800 100:$3.1900 250:$3.0300 500:$2.7200 1000:$2.2900 2500:$2.1800
IPW60R125P6XKSA1	Infineon Technologies AG	Infineon CoolMOS™ N-Channel Power MOSFETIPW60R125P6 - TO247 RoHS: Not Compliant	200	1000:$1.9700 500:$2.0800 100:$2.1600 25:$2.2600 1:$2.4300
IPW60R125P6XKSA1 DISTI # IPW60R125P6XKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,600V,30A,219W,PG-TO247-3	171	1:$4.5600 3:$3.9300 10:$3.1500 30:$2.7300
IPW60R125P6XKSA1 DISTI # 2709928	Infineon Technologies AG	MOSFET, N-CH, 600V, 30A, TO-247 RoHS: Compliant	469	1200:$3.8300 720:$4.5400 240:$5.6000 10:$6.8400 1:$7.6500
IPW60R125P6XKSA1 DISTI # 2709928	Infineon Technologies AG	MOSFET, N-CH, 600V, 30A, TO-247	471	500:£2.1200 250:£2.3700 100:£2.4900 10:£2.8600 1:£3.7600

영상	부분 #	설명
	Mfr.#: AT24C32E-SSHM-T OMO.#: OMO-AT24C32E-SSHM-T	EEPROM 1.7-3.6V, 1MHz Ind Tmp 8-SOIC-N
	Mfr.#: FSBB20CH60C OMO.#: OMO-FSBB20CH60C	Motor / Motion / Ignition Controllers & Drivers 600V 20A SPM
	Mfr.#: BC817-40Q-7-F OMO.#: OMO-BC817-40Q-7-F	Bipolar Transistors - BJT SS Low Sat Transistor
	Mfr.#: BAW56LT1G OMO.#: OMO-BAW56LT1G	Diodes - General Purpose, Power, Switching 70V 200mA
	Mfr.#: SG3525AN OMO.#: OMO-SG3525AN	Switching Controllers Voltage Mode w/Sync
	Mfr.#: MBR0520L OMO.#: OMO-MBR0520L	Schottky Diodes & Rectifiers Schottky Power Rect .5a
	Mfr.#: LTST-C194TBKT OMO.#: OMO-LTST-C194TBKT	Standard LEDs - SMD Blue 470nm 28mcd 20mA
	Mfr.#: AT24C32E-SSHM-T OMO.#: OMO-AT24C32E-SSHM-T-MICROCHIP-TECHNOLOGY	EEPROM 1.7-3.6V, 1MHz Ind Tmp 8-SOIC-N
	Mfr.#: LTST-C194TBKT OMO.#: OMO-LTST-C194TBKT-LITE-ON	Standard LEDs - SMD Blue 470nm 28mcd 20mA
	Mfr.#: FSBB20CH60C OMO.#: OMO-FSBB20CH60C-ON-SEMICONDUCTOR	MODULE SPM 600V 20A SPMCC

IPW60R125P6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes