FDMS5352

Mfr. #:: FDMS5352
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET 60V N-Channel PowerTrench
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDMS5352 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: FDMS5352 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: Power-56-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 13.6 A

Rds On - 드레인 소스 저항:: 6.7 mOhms

Vgs - 게이트 소스 전압:: 20 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.5 W

구성:: 하나의

채널 모드:: 상승

상표명:: 파워트렌치

포장:: 릴

키:: 1.1 mm

길이:: 6 mm

시리즈:: FDMS5352

트랜지스터 유형:: 1 N-Channel

너비:: 5 mm

상표:: 온세미컨덕터 / 페어차일드

가을 시간:: 7 ns

상품 유형:: MOSFET

상승 시간:: 11 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 58 ns

일반적인 켜기 지연 시간:: 19 ns

단위 무게:: 0.002402 oz

Tags: FDMS53, FDMS5, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS5352 설명

***ark: MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain C

***emi: N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011)

***ure Electronics: N-Channel 60 V 12.3 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***emi: Power Trench® MOSFET, N-Channel, 60V, 50A, 12.3mΩ

***r Electronics: Power Field-Effect Transistor, 11.5A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

*** Source Electronics: MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R

***emi: N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ

***ure Electronics: FDMS86520L Series 60 V 22 A 8.2 mOhm N-Ch PowerTrench® MOSFET - Power 56

*** Stop Electro: Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 60V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***ark: Mosfet Transistor, Dual N Channel, 15 A, 60 V, 0.047 Ohm, 10 V, 2 V

***ical: Trans MOSFET N-CH 60V 15A Automotive 5-Pin(4+Tab) PowerPAK SO T/R

***nell: MOSFET, 2 N CH, 60V, 15A, POWERPAK SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 34W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C

***ure Electronics: N-Channel 60 V 0.07 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, N CH, 60V, 16A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***ical: Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK T/R

***i-Key: MOSFET N-CH 60V 15A TO252

***ment14 APAC: MOSFET,N CH,W DIODE,60V,15A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V

***: 60V N-CHANNEL

***ow.cn: Trans MOSFET P-CH 60V 16A Automotive 8-Pin PowerPAK 1212 T/R

*** Electronics: Automotive P-Channel 60 V (D-S) 175 °C MOSFET

***roFlash: Power Field-Effect Transistor, 16A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

*** Stop Electro: Power Field-Effect Transistors

FDMS5352 추가 정보

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

부분 #	제조	설명	재고	가격
FDMS5352 DISTI # V72:2272_06338066	ON Semiconductor	Trans MOSFET N-CH Si 60V 13.6A 8-Pin Power 56 T/R	0
FDMS5352 DISTI # V36:1790_06338066	ON Semiconductor	Trans MOSFET N-CH Si 60V 13.6A 8-Pin Power 56 T/R	0	3000000:$1.1070 1500000:$1.1080 300000:$1.1810 30000:$1.2870 3000:$1.3040
FDMS5352 DISTI # FDMS5352CT-ND	ON Semiconductor	MOSFET N-CH 60V 13.6A POWER56 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6194In Stock	1000:$1.4427 500:$1.7412 100:$2.1193 10:$2.6370 1:$2.9400
FDMS5352 DISTI # FDMS5352DKR-ND	ON Semiconductor	MOSFET N-CH 60V 13.6A POWER56 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6194In Stock	1000:$1.4427 500:$1.7412 100:$2.1193 10:$2.6370 1:$2.9400
FDMS5352 DISTI # FDMS5352TR-ND	ON Semiconductor	MOSFET N-CH 60V 13.6A POWER56 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	6000:$1.2558 3000:$1.3041
FDMS5352 DISTI # FDMS5352	ON Semiconductor	Trans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	6000:$1.0900 12000:$1.0900 18000:$1.0900 30000:$1.0900 3000:$1.1900
FDMS5352 DISTI # FDMS5352	ON Semiconductor	Trans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R (Alt: FDMS5352) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€1.0659 18000:€1.1419 12000:€1.2299 6000:€1.3329 3000:€1.5999
FDMS5352 DISTI # FDMS5352	ON Semiconductor	Trans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R - Bulk (Alt: FDMS5352) RoHS: Compliant Min Qty: 246 Container: Bulk	Americas - 0	1230:$1.1900 2460:$1.1900 246:$1.2900 492:$1.2900 738:$1.2900
FDMS5352 DISTI # 08N9285	ON Semiconductor	MOSFET Transistor, N Channel, 13.6 A, 60 V, 0.0056 ohm, 10 V, 1.8 V	0	30000:$1.1500 18000:$1.2000 12000:$1.2500 6000:$1.3800 3000:$1.4600 1:$1.5500
FDMS5352 DISTI # 512-FDMS5352	ON Semiconductor	MOSFET 60V N-Channel PowerTrench RoHS: Compliant	6298	1:$2.7000 10:$2.3000 100:$1.8400 500:$1.6100 1000:$1.3300 3000:$1.2400 6000:$1.1900
FDMS5352	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 13.6A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	18583	1000:$1.3400 500:$1.4100 100:$1.4700 25:$1.5300 1:$1.6500
FDMS5352 DISTI # FDMS5352	ON Semiconductor	Transistor: N-MOSFET,unipolar,60V,49A,104W,PQFN8	2848	500:$1.6600 100:$1.7800 25:$1.9700 5:$2.4600 1:$2.8600

관련 상품

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	Mfr.#: IRFH5110TRPBF OMO.#: OMO-IRFH5110TRPBF	MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
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	Mfr.#: RJE7318800140 OMO.#: OMO-RJE7318800140-402	Modular Connectors / Ethernet Connectors Mod Jack 1 Port 8P8C Shielded w/o Tabs
	Mfr.#: HCPL-M453-500E OMO.#: OMO-HCPL-M453-500E-BROADCOM	High Speed Optocouplers 1MBd 3750Vdc
	Mfr.#: 2N7002K-T1-E3 OMO.#: OMO-2N7002K-T1-E3-VISHAY	MOSFET N-CH 60V 300MA SOT-23

유효성

재고:: Available
주문 시:: 1989
수량 입력:

FDMS5352의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$2.70~~; ~~US$2.70~~

10: ~~US$2.30~~; ~~US$23.00~~

100: ~~US$1.84~~; ~~US$184.00~~

500: ~~US$1.61~~; ~~US$805.00~~

1000: ~~US$1.33~~; ~~US$1 330.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

FDMS53 9
FDMS5 12
FDMS 328
FDM 847

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FDMS5352

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes