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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| FMI20N50E | ISC | I²PAK/TO-262 | 5000 | |
| FMI20N50ES | ISC | I²PAK/TO-262 | 5000 | |
| FMI20N50E DISTI # FE0000000000987 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI20N50ESSC DISTI # FE0000000004529 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI20N50ES DISTI # FE0000000000988 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: FMI20N50E OMO.#: OMO-FMI20N50E-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI20N50ES OMO.#: OMO-FMI20N50ES-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI27851 OMO.#: OMO-FMI27851-1190 |
신규 및 오리지널 |