IGP10N60TXKSA1

Mfr. #:: IGP10N60TXKSA1
제조사:: Infineon Technologies
설명:: IGBT Transistors LOW LOSS IGBT TECH 600V 10A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IGP10N60TXKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IGP10N60TXKSA1 Datasheet IGP10N60TXKSA1 Datasheet (P4-P6)IGP10N60TXKSA1 Datasheet (P7-P9)IGP10N60TXKSA1 Datasheet (P10-P12)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-220-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 1.5 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 24 A

Pd - 전력 손실:: 110 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

시리즈:: 트렌치스톱 IGBT

포장:: 튜브

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 500

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IGP10N60T IGP1N6TXK SP000683042

단위 무게:: 0.071589 oz

Tags: IGP10N, IGP10, IGP1, IGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGP10N60TXKSA1 설명

***ical: Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ineon SCT: Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

*** Source Electronics: Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ure Electronics: STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220

***ical: Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ment14 APAC: IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***Yang: IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3

***ow.cn: Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

***nsix Microsemi: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

*** Source Electronics: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

***el Electronic: STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins

***icroelectronics: N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

***ure Electronics: STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope

***p One Stop: Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP - TO-220FP

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;

***nell: IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Rail

***r Electronics: Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ure Electronics: SGP23N60: 600 V 23 A 100 W Through Hole Ultra-Fast IGBT - TO-220-3

***rchild Semiconductor: Fairchild's UD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Market price

부분 #	제조	설명	재고	가격
IGP10N60TXKSA1 DISTI # V36:1790_06383849	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	0	500000:$0.6144 250000:$0.6149 50000:$0.6992 5000:$0.8783 500:$0.9100
IGP10N60TXKSA1 DISTI # IGP10N60TXKSA1-ND	Infineon Technologies AG	IGBT 600V 20A 110W TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$0.9691
IGP10N60TXKSA1 DISTI # IGP10N60TXKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 24A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP10N60TXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$0.6699 3000:$0.6819 2000:$0.7059 1000:$0.7319 500:$0.7589
IGP10N60TXK DISTI # IGP10N60TXKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IGP10N60TXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$0.6699 3000:$0.6819 2000:$0.7059 1000:$0.7319 500:$0.7589
IGP10N60TXKSA1 DISTI # 726-IGP10N60TXKSA1	Infineon Technologies AG	IGBT Transistors LOW LOSS IGBT TECH 600V 10A RoHS: Compliant	1500	1:$1.5500 10:$1.3100 100:$1.0500 500:$0.9230 1000:$0.7650 2500:$0.7130 5000:$0.6860 10000:$0.6600
IGP10N60T DISTI # 726-IGP10N60T	Infineon Technologies AG	IGBT Transistors LOW LOSS IGBT TECH 600V 10A RoHS: Compliant	596	1:$1.5500 10:$1.3100 100:$1.0500 500:$0.9230 1000:$0.7650 2500:$0.7130 5000:$0.6860 10000:$0.6600
IGP10N60TXKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	1880	1000:$0.6100 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7500

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IGP10N60TXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes