QPD1010

Mfr. #:: QPD1010
제조사:: Qorvo
설명:: RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: QPD1010 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: QPD1010 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 24.7 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 50 V

Vgs - 게이트 소스 항복 전압:: 145 V

Id - 연속 드레인 전류:: 400 mA

출력 파워:: 11 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

Pd - 전력 손실:: 13.5 W

장착 스타일:: SMD/SMT

패키지/케이스:: QFN-16

포장:: 와플

구성:: 하나의

동작 주파수:: 4 GHz

작동 온도 범위:: - 40 C to + 85 C

시리즈:: QPD

상표:: 코르보

개발 키트:: QPD1010-EVB1

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

Vgs th - 게이트 소스 임계 전압:: - 2.8 V

부품 번호 별칭:: 1132873

단위 무게:: 0.081130 oz

Tags: QPD101, QPD10, QPD1, QPD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1010 설명

***W: RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN

QPD1010 추가 정보

QPD1009 & QPD1010 GaN RF Transistors: Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

Market price

부분 #	제조	설명	재고	가격
QPD1010 DISTI # 772-QPD1010	Qorvo	RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN RoHS: Compliant	40	1:$20.5500 25:$17.7700 100:$15.3700 250:$14.3000 500:$13.3000
QPD1010-EVB1 DISTI # 772-QPD1010-EVB1	Qorvo	RF Development Tools DC-4GHz 10W 28-50V Eval Board RoHS: Compliant	3	1:$875.0000

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