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IPB120N04S4-01

IPB120N04S4-01
Mfr. #:
IPB120N04S4-01
제조사:
Infineon Technologies
설명:
RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB120N04S4-01 데이터 시트
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추가 정보:
IPB120N04S4-01 추가 정보
제품 속성
속성 값
제조사
인피니언
제품 카테고리
FET - 단일
시리즈
OptiMOS-T2
포장
릴
부분 별칭
IPB120N04S401ATMA1 IPB120N04S401XT SP000705700
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
상표명
옵티모스
패키지 케이스
TO-252-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
300 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
120 A
Vds-드레인-소스-고장-전압
40 V
Rds-On-Drain-Source-Resistance
2 mOhms
트랜지스터 극성
N-채널
채널 모드
상승
Tags
IPB120N04S4-0, IPB120N04S4, IPB120N04, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive COOLiRFET™ Power MOSFETs
Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These new devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density and reliability. With this performance, many applications using these new COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
부분 # 제조 설명 재고 가격
IPB120N04S401ATMA1
DISTI # V72:2272_06383031		Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 1:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.3028
IPB120N04S401ATMA1
DISTI # 26195102		Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 7:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N04S401ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1759
  • 2000:$1.1339
  • 4000:$1.0929
  • 6000:$1.0559
  • 10000:$1.0369
IPB120N04S401ATMA1
DISTI # SP000705700		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000705700)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.3249
  • 2000:€1.1039
  • 4000:€1.0189
  • 6000:€0.9469
  • 10000:€0.8829
IPB120N04S401ATMA1
DISTI # 34AC1654		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes263
  • 1:$3.0000
  • 10:$2.7100
  • 25:$2.5300
  • 50:$2.3500
  • 100:$2.1800
  • 250:$1.9300
  • 500:$1.6900
IPB120N04S401ATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		46451
  • 1000:$1.1000
  • 500:$1.1600
  • 100:$1.2100
  • 25:$1.2600
  • 1:$1.3600
IPB120N04S4-01
DISTI # 726-IPB120N04S4-01		Infineon Technologies AGMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		2372
  • 1:$2.4100
  • 10:$2.0500
  • 100:$1.6400
  • 500:$1.4300
  • 1000:$1.1900
IPB120N04S401ATMA1
DISTI # 2781067		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant		263
  • 1:$2.4100
  • 10:$2.2500
  • 100:$1.9900
  • 250:$1.8800
  • 500:$1.7800
  • 1000:$1.7000
IPB120N04S401ATMA1
DISTI # 2781067		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant		331
  • 1:£2.4700
  • 10:£1.9800
  • 100:£1.6000
  • 250:£1.4200
  • 500:£1.2400
IPB120N04S401ATMA1
DISTI # C1S322000652291		Infineon Technologies AGMOSFETs
RoHS: Compliant		106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
영상 부분 # 설명
IPB120N04S404ATMA1

Mfr.#: IPB120N04S404ATMA1

OMO.#: OMO-IPB120N04S404ATMA1

 MOSFET N-CHANNEL_30/40V
IPB120N04S401ATMA1

Mfr.#: IPB120N04S401ATMA1

OMO.#: OMO-IPB120N04S401ATMA1

 MOSFET N-CHANNEL_30/40V
IPB120N06NGINTR-ND

Mfr.#: IPB120N06NGINTR-ND

OMO.#: OMO-IPB120N06NGINTR-ND-1190

 신규 및 오리지널
IPB120N06S402ATMA1

Mfr.#: IPB120N06S402ATMA1

OMO.#: OMO-IPB120N06S402ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N06S403ATMA1

Mfr.#: IPB120N06S403ATMA1

OMO.#: OMO-IPB120N06S403ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N06S4H1ATMA1

Mfr.#: IPB120N06S4H1ATMA1

OMO.#: OMO-IPB120N06S4H1ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N10S4-03

Mfr.#: IPB120N10S4-03

OMO.#: OMO-IPB120N10S4-03-1190

 - Bulk (Alt: IPB120N10S4-03)
IPB120N08S404ATMA1

Mfr.#: IPB120N08S404ATMA1

OMO.#: OMO-IPB120N08S404ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 75/80V
IPB120N06S4H1ATMA2

Mfr.#: IPB120N06S4H1ATMA2

OMO.#: OMO-IPB120N06S4H1ATMA2-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
IPB120N04S4-02

Mfr.#: IPB120N04S4-02

OMO.#: OMO-IPB120N04S4-02-317

 RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
유효성
재고:
Available
주문 시:
5500
수량 입력:
IPB120N04S4-01의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.60
US$1.60
10
US$1.52
US$15.25
100
US$1.44
US$144.45
500
US$1.36
US$682.15
1000
US$1.28
US$1 284.00
시작
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