IPD180N10N

IPD180N10N
Mfr. #:
IPD180N10N
제조사:
Infineon Technologies
설명:
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD180N10N 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
FET - 단일
시리즈
옵티모스
포장
Digi-ReelR 대체 패키징
부분 별칭
IPD180N10N3GBTMA1 IPD180N10N3GXT SP000482438
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
패키지 케이스
TO-252-3, DPak (2 Leads + Tab), SC-63
기술
작동 온도
-55°C ~ 175°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
PG-TO252-3
구성
하나의
FET형
MOSFET N-채널, 금속 산화물
파워맥스
71W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
100V
입력-커패시턴스-Ciss-Vds
1800pF @ 50V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
43A (Tc)
Rds-On-Max-Id-Vgs
18 mOhm @ 33A, 10V
Vgs-th-Max-Id
3.5V @ 33μA
Gate-Charge-Qg-Vgs
25nC @ 10V
Pd 전력 손실
71 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
5 ns
상승 시간
12 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
43 A
Vds-드레인-소스-고장-전압
100 V
Rds-On-Drain-Source-Resistance
18 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
19 ns
일반 켜기 지연 시간
12 ns
채널 모드
상승
Tags
IPD18, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
부분 # 제조 설명 재고 가격
IPD180N10N3GATMA1
DISTI # V72:2272_09156944
Infineon Technologies AGMV POWER MOS1850
  • 1000:$0.4258
  • 500:$0.5137
  • 250:$0.5657
  • 100:$0.5675
  • 25:$0.6906
  • 10:$0.6937
  • 1:$0.7809
IPD180N10N3GATMA1
DISTI # IPD180N10N3GATMA1TR-ND
Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.4813
IPD180N10N3GBTMA1
DISTI # IPD180N10N3GBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    IPD180N10N3GBTMA1
    DISTI # IPD180N10N3GBTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPD180N10N3GBTMA1
      DISTI # IPD180N10N3GBTMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1CT-ND
        Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)
        Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1DKR-ND
        Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®
        Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # 26196098
        Infineon Technologies AGMV POWER MOS1850
        • 21:$0.7816
        IPD180N10N3 G
        DISTI # IPD180N10N3 G
        Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin TO-252 T/R (Alt: IPD180N10N3 G)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel
        Asia - 12500
        • 2500:$0.4992
        • 5000:$0.4787
        • 7500:$0.4722
        • 12500:$0.4538
        • 25000:$0.4480
        • 62500:$0.4368
        • 125000:$0.4261
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1
        Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel
        Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GBTMA1
        DISTI # IPD180N10N3GBTMA1
        Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel
        Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GATMA1
        DISTI # 47Y8049
        Infineon Technologies AGMOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V , RoHS Compliant: Yes0
          IPD180N10N3GATMA1
          DISTI # 726-IPD180N10N3GATMA
          Infineon Technologies AGMOSFET MV POWER MOS
          RoHS: Compliant
          251
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          IPD180N10N3GBTMA1
          DISTI # 726-IPD180N10N3GBTMA
          Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant
          0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3 G
          DISTI # 726-IPD180N10N3G
          Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant
          0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3GInfineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant
          116
          • 1000:$0.4600
          • 500:$0.4800
          • 100:$0.5000
          • 25:$0.5200
          • 1:$0.5600
          IPD180N10N3GBTMA1Infineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant
          166
          • 1000:$0.4400
          • 500:$0.4600
          • 100:$0.4800
          • 25:$0.5000
          • 1:$0.5400
          IPD180N10N3GInfineon Technologies AGINSTOCK622
            IPD180N10N3GATMA1
            DISTI # 2443433
            Infineon Technologies AGMOSFET, N CH, 100V, 43A, TO-252-3
            RoHS: Compliant
            0
            • 1:$1.6300
            • 10:$1.3900
            • 100:$1.0700
            • 500:$0.9400
            • 1000:$0.7430
            • 2500:$0.6670
            IPD180N10N3GBTMA1
            DISTI # 2617464
            Infineon Technologies AGMOSFET, N-CH, 100V, 43A, TO-252-3
            RoHS: Compliant
            0
            • 1:$1.4900
            • 10:$1.2300
            • 100:$0.9930
            • 250:$0.8880
            • 500:$0.7870
            • 1000:$0.7320
            영상 부분 # 설명
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1

            MOSFET MV POWER MOS
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1

            MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G

            MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 100V 43A TO252-3
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES

            MV POWER MOS
            IPD180N10N3GATMA1-CUT TAPE

            Mfr.#: IPD180N10N3GATMA1-CUT TAPE

            OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190

            신규 및 오리지널
            IPD180N10N

            Mfr.#: IPD180N10N

            OMO.#: OMO-IPD180N10N-1190

            신규 및 오리지널
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G-1190

            MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GATMA1 , 2SD2

            Mfr.#: IPD180N10N3GATMA1 , 2SD2

            OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190

            신규 및 오리지널
            IPD180N10N3G

            Mfr.#: IPD180N10N3G

            OMO.#: OMO-IPD180N10N3G-124

            Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            유효성
            재고:
            Available
            주문 시:
            4500
            수량 입력:
            IPD180N10N의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
            참고 가격(USD)
            수량
            단가
            내선 가격
            1
            US$0.00
            US$0.00
            10
            US$0.00
            US$0.00
            100
            US$0.00
            US$0.00
            500
            US$0.00
            US$0.00
            1000
            US$0.00
            US$0.00
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