SI4564DY-T1-GE3

Mfr. #:: SI4564DY-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 40V Vds 16V Vgs SO-8 N&P PAIR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4564DY-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4564DY-T1-GE3 Datasheet SI4564DY-T1-GE3 Datasheet (P4-P6)SI4564DY-T1-GE3 Datasheet (P7-P9)SI4564DY-T1-GE3 Datasheet (P10-P12)
ECAD Model:
추가 정보:: SI4564DY-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널, P-채널

Vds - 드레인 소스 항복 전압:: 40 V

Id - 연속 드레인 전류:: 10 A, 9.2 A

Rds On - 드레인 소스 저항:: 17.5 mOhms, 21 mOhms

Vgs th - 게이트 소스 임계 전압:: 800 mV, 1.2 V

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 20.5 nC, 41.5 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 3.1 W, 3.2 W

구성:: 듀얼

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

시리즈:: SI4

트랜지스터 유형:: 1 N-Channel, 1 P-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 27 S, 25 S

가을 시간:: 9 ns, 14 ns

상품 유형:: MOSFET

상승 시간:: 10 ns, 9 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 18 ns, 50 ns

일반적인 켜기 지연 시간:: 7 ns, 9 ns

부품 번호 별칭:: SI4542DY-T1-E3-S

단위 무게:: 0.017870 oz

Tags: SI456, SI45, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4564DY-T1-GE3 설명

***ied Electronics & Automation: SI4564DY-T1-GE3 Dual N/P-channel MOSFET Transistor, 7.2 A, 8 A, 40 V, 8-Pin SOIC

*** Source Electronics: Trans MOSFET N/P-CH 40V 10A/9.2A 8-Pin SOIC N T/R / MOSFET N/P-CH 40V 10A 8SOIC

***ure Electronics: Dual N&P-Channel 40 V 0.0175/0.021 O Surface Mount Mosfet - SOIC-8

SI4564DY-T1-GE3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

부분 #	제조	설명	재고	가격
SI4564DY-T1-GE3 DISTI # V36:1790_09215573	Vishay Intertechnologies	Trans MOSFET N/P-CH 40V 8A/7.2A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.6545 1250000:$0.6583 250000:$1.0360 25000:$1.7300 2500:$1.8480
SI4564DY-T1-GE3 DISTI # V72:2272_09215573	Vishay Intertechnologies	Trans MOSFET N/P-CH 40V 8A/7.2A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4564DY-T1-GE3 DISTI # SI4564DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 40V 10A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.5376 5000:$0.5586 2500:$0.5880
SI4564DY-T1-GE3 DISTI # SI4564DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 40V 10A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.6489 500:$0.8219 100:$0.9950 10:$1.2760 1:$1.4300
SI4564DY-T1-GE3 DISTI # SI4564DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 40V 10A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.6489 500:$0.8219 100:$0.9950 10:$1.2760 1:$1.4300
SI4564DY-T1-GE3 DISTI # SI4564DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 40V 8A/7.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4564DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	25000:$0.4629 15000:$0.4758 10000:$0.4893 5000:$0.5100 2500:$0.5256
SI4564DY-T1-GE3 DISTI # SI4564DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 40V 8A/7.2A 8-Pin SOIC N T/R (Alt: SI4564DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4564DY-T1-GE3 DISTI # SI4564DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 40V 8A/7.2A 8-Pin SOIC N T/R (Alt: SI4564DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.4229 15000:€0.4419 10000:€0.4999 5000:€0.6159 2500:€0.8589
SI4564DY-T1-GE3 DISTI # 05W6946	Vishay Intertechnologies	Trans MOSFET N/P-CH 40V 8A/7.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 05W6946) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	500:$0.7610 250:$0.8230 100:$0.8840 50:$0.9760 25:$1.0700 10:$1.1600 1:$1.4000
SI4564DY-T1-GE3 DISTI # 86R3889	Vishay Intertechnologies	MOSFET, NP-CH, 40V, 10/-9.2A, SOIC-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0145ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	10000:$0.5080 6000:$0.5200 4000:$0.5400 2000:$0.6000 1000:$0.6600 1:$0.6880
SI4564DY-T1-GE3 DISTI # 05W6946	Vishay Intertechnologies	MOSFET, NP CHANNEL, 40V, 10/-9.2A, SOIC-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:800mVRoHS Compliant: Yes	2345	500:$1.1400 250:$1.3000 100:$1.4500 50:$1.5800 25:$1.7000 10:$1.8100 1:$2.0600
SI4564DY-T1-GE3 DISTI # 64T4069	Vishay Intertechnologies	Dual MOSFET, N and P Channel, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV RoHS Compliant: Yes	676	500:$0.8340 250:$0.8930 100:$0.9510 50:$1.0400 25:$1.1300 10:$1.2200 1:$1.4500
SI4564DY-T1-GE3 DISTI # 70459543	Vishay Siliconix	SI4564DY-T1-GE3 Dual N/P-channel MOSFETTransistor,7.2 A,8 A,40 V,8-Pin SOIC RoHS: Compliant	0	2500:$0.6170
SI4564DY-T1-GE3 DISTI # 781-SI4564DY-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 16V Vgs SO-8 N&P PAIR RoHS: Compliant	5552	1:$1.3900 10:$1.1500 100:$0.8830 500:$0.7600 1000:$0.5990 2500:$0.5590 5000:$0.5310 10000:$0.5120
SI4564DY-T1-GE3 DISTI # 8123230	Vishay Intertechnologies	TRANS MOSFET N/P-CH 40V 8A/7.2A, PK	240	2500:£0.4720 1500:£0.4820 500:£0.5680 100:£0.6610 10:£0.8990
SI4564DY-T1-GE3 DISTI # 2056723	Vishay Intertechnologies	MOSFET, NP CH, W/DIODE, 40V, SO8 RoHS: Compliant	5529	1000:$0.9710 500:$1.2300 100:$1.4900 10:$1.9100 1:$2.1400
SI4564DY-T1-GE3 DISTI # 2056723RL	Vishay Intertechnologies	MOSFET, NP CH, W/DIODE, 40V, SO8 RoHS: Compliant	0	1000:$0.9710 500:$1.2300 100:$1.4900 10:$1.9100 1:$2.1400
SI4564DY-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 16V Vgs SO-8 N&P PAIR	Americas - 12500
SI4564DY-T1-GE3 DISTI # 2056723	Vishay Intertechnologies	MOSFET, NP CH, W/DIODE, 40V, SO8	3097	500:£0.6850 250:£0.7840 100:£0.8830 10:£1.1600 1:£1.4400

관련 상품

영상	부분 #	설명
	Mfr.#: M41T62LC6F OMO.#: OMO-M41T62LC6F	Real Time Clock Serial real-time clocks with alarm
	Mfr.#: PESD5Z12,115 OMO.#: OMO-PESD5Z12-115	TVS Diodes / ESD Suppressors DIODE ARRAY ESD
	Mfr.#: SI4554DY-T1-GE3 OMO.#: OMO-SI4554DY-T1-GE3	MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
	Mfr.#: BQ771806DPJR OMO.#: OMO-BQ771806DPJR	Battery Management OVP=4.35V, Hyst=300mV, Del=3s, CMOS AH
	Mfr.#: TPS2500DRCR OMO.#: OMO-TPS2500DRCR	Power Switch ICs - Power Distribution Integr USB Pwr Sw w/ Boost Converter
	Mfr.#: MMA8452QR1 OMO.#: OMO-MMA8452QR1	Accelerometers LOW G 3-AXIS 12BT EX VLT
	Mfr.#: CSTNE8M00G550000R0 OMO.#: OMO-CSTNE8M00G550000R0	Resonators 8.0000MHz 33pF SMD CHP Resntr
	Mfr.#: SI4554DY-T1-GE3 OMO.#: OMO-SI4554DY-T1-GE3-VISHAY	MOSFET N/P-CH 40V 8A 8SO
	Mfr.#: M41T62LC6F OMO.#: OMO-M41T62LC6F-STMICROELECTRONICS	IC RTC CLK/CALENDAR I2C 8LCC
	Mfr.#: LIS2DW12TR OMO.#: OMO-LIS2DW12TR-STMICROELECTRONICS	ACCEL 2-16G I2C/SPI 12LGA

유효성

재고:: Available
주문 시:: 1989
수량 입력:

SI4564DY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.39~~; ~~US$1.39~~

10: ~~US$1.15~~; ~~US$11.50~~

100: ~~US$0.88~~; ~~US$88.30~~

500: ~~US$0.76~~; ~~US$380.00~~

1000: ~~US$0.60~~; ~~US$599.00~~

시작

SI456 25
SI45 151
SI4 2994

최신 제품

Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
SiC43x 3 V to 24 V microBUCK®

Vishay’s SiC43x family features minimum external components with two resistors to set soft start, switching frequency, ILIMIT, and operating mode.
SIHJ6N65E, SIHJ7N65E, and SIHJ8N60E E Series MOSFE

Vishay has extended the offering of 600 V and 650 V E series power MOSFETs with three n-channel devices in the compact PowerPAK SO-8L package.
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
Compare SI4564DY-T1-GE3

SI4561DYT1E3 vs SI4561DYT1GE3 vs SI4562
N-Channel 8 V (D-S) MOSFETs

Vishay's TrenchFET® MOSFETs have an industry low on-resistance of 20 mΩ at 4.5 V, used in applications where low on-resistance is more critical than space.

More Newest Products

SI4564DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes