SI7456CDP-T1-GE3

Name: Vishay - SI7456CDP-T1-GE3
Brand: Vishay
SKU: OMO-2919513
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI7456CDP-T1-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 100V 27.5A 35.7W
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI7456CDP-T1-GE3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

포장: 릴

단위 무게: 0.017870 oz

장착 스타일: SMD/SMT

상표명: TrenchFET

패키지 케이스: SO-8

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 35.7 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 27.5 A

Vds-드레인-소스-고장-전압: 100 V

Rds-On-Drain-Source-Resistance: 31.5 mOhms

트랜지스터 극성: N-채널

Tags: SI7456, SI745, SI74, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7456CDP-T1-GE3 설명

***ical: Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 100V 27.5A PPAK SO-8

***: 100V, 25 MOHMS@10V

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0195Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:5W; No. Of Pins:8Pins Rohs Compliant: Yes

***nell: MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:19500µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:10.3A; Power Dissipation:5W

***ment14 APAC: MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V

Market price

부분 #	제조	설명	재고	가격
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 27.5A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8019
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 27.5A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8871 500:$1.0707 100:$1.3766 10:$1.7130 1:$1.9000
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 27.5A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8871 500:$1.0707 100:$1.3766 10:$1.7130 1:$1.9000
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7456CDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7859 6000:$0.7619 12000:$0.7309 18000:$0.7109 30000:$0.6919
SI7456CDP-T1-GE3 DISTI # 86R3925	Vishay Intertechnologies	MOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V	0	1:$0.7890 3000:$0.7830 6000:$0.7460
SI7456CDP-T1-GE3. DISTI # 30AC0199	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.7890 3000:$0.7830 6000:$0.7460
SI7456CDP-T1-GE3 DISTI # 78-SI7456CDP-T1-GE3	Vishay Intertechnologies	MOSFET 100V 27.5A 35.7W RoHS: Compliant	0	1:$1.6800 10:$1.4000 100:$1.0800 500:$0.9460 1000:$0.9010 3000:$0.9000
SI7456CDP-T1-GE3	Vishay Intertechnologies	MOSFET 100V 27.5A 35.7W	Americas -

SI7456CDP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes