APT30GP60JDQ1

APT30GP60JDQ1
Mfr. #:
APT30GP60JDQ1
제조사:
Microchip / Microsemi
설명:
IGBT Modules FG, IGBT-COMBI, 600V, 30A, SOT-227
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
APT30GP60JDQ1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT30GP60JDQ1 DatasheetAPT30GP60JDQ1 Datasheet (P4-P6)APT30GP60JDQ1 Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
IGBT 모듈
RoHS:
Y
제품:
IGBT 실리콘 모듈
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
2.2 V
25C에서 연속 수집기 전류:
67 A
게이트-이미터 누설 전류:
100 nA
Pd - 전력 손실:
245 W
패키지/케이스:
ISOTOP-4
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
포장:
튜브
상표:
마이크로칩 / 마이크로세미
장착 스타일:
SMD/SMT
최대 게이트 이미터 전압:
20 V
상품 유형:
IGBT 모듈
공장 팩 수량:
1
하위 카테고리:
IGBT
Tags
APT30GP, APT30G, APT30, APT3, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT Module N-Channel 600V 67A 20V SOT-227 Screw Mount
***i-Key
IGBT MODULE 600V 67A 245W ISOTOP
***ark
IGBT PT MOS 7 COMBI 600 V 40 A ISOTOP 4 SOT-227 TUBE ROHS COMPLIANT: YES
***et
Trans IGBT Chip N-CH 600V 86A 4-Pin SOT-227
*** Stop Electro
Insulated Gate Bipolar Transistor, 86A I(C), 600V V(BR)CES, N-Channel
***el Electronic
IGBT MODULE 600V 86A 284W ISOTOP
***ow.cn
Trans IGBT Module N-CH 600V 86A 284000mW
***ure Electronics
APT150GN60J Series 600 V 220 A Trench and Field Stop IGBT - SOT-227
***rochip
IGBT Fieldstop Low Frequency Single 600 V 150 A SOT-227
***et
Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227
*** Stop Electro
Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel
***el Electronic
IGBT MOD 600V 220A 536W ISOTOP
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***ure Electronics
APT150GN60JDQ Series 600 V 220 A Trench and Field Stop IGBT - SOT-227
***rochip
IGBT Fieldstop Low Frequency Combi 600 V 150 A SOT-227
***et
Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227
***icontronic
Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel
***el Electronic
IGBT MOD 600V 220A 536W ISOTOP
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Electronics
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
***i-Key
IGBT MOD 600V 280A 940W SOT227B
***ource
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***el Electronic
Trans IGBT Chip N-CH 600V 96A 4-Pin SOT-227 Rail
***et
PWR IGBT 39A,600V,SMPS N-CH W/DIODE TO-227
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 900V 115A 500000mW 4-Pin SOT-227B
***el Electronic
IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
***i-Key
IGBT MOD 900V 115A 500W SOT227B
***ure Electronics
900V, 70a, 2.7Vce, SOT-227B, miniBLOC
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 115 / Collector-Emitter Voltage (Vceo) V = 900 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 500 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
부분 # 제조 설명 재고 가격
APT30GP60JDQ1
DISTI # APT30GP60JDQ1-ND
Microsemi CorporationIGBT 600V 67A 245W SOT227
RoHS: Compliant
Min Qty: 19
Container: Tube
Limited Supply - Call
  • 19:$25.7763
APT30GP60JDQ1
DISTI # APT30GP60JDQ1
Microchip Technology IncIGBT Module N-Channel 600V 67A 20V SOT-227 Screw Mount - Rail/Tube (Alt: APT30GP60JDQ1)
RoHS: Compliant
Min Qty: 19
Container: Tube
Americas - 0
  • 190:$17.2900
  • 95:$17.5900
  • 57:$18.0900
  • 38:$18.6900
  • 19:$19.3900
APT30GP60JDQ1
DISTI # 494-APT30GP60JDQ1
Microchip Technology IncIGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
RoHS: Compliant
0
    영상 부분 # 설명
    APT30GT60BRG

    Mfr.#: APT30GT60BRG

    OMO.#: OMO-APT30GT60BRG

    IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
    APT30GT60BRDQ2G

    Mfr.#: APT30GT60BRDQ2G

    OMO.#: OMO-APT30GT60BRDQ2G

    IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
    APT30GP60B2DLG

    Mfr.#: APT30GP60B2DLG

    OMO.#: OMO-APT30GP60B2DLG

    IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
    APT30GF60JU3

    Mfr.#: APT30GF60JU3

    OMO.#: OMO-APT30GF60JU3

    IGBT Modules Power Module - IGBT
    APT30GF60JU3

    Mfr.#: APT30GF60JU3

    OMO.#: OMO-APT30GF60JU3-MICROSEMI

    IGBT Modules
    APT30GP60BC

    Mfr.#: APT30GP60BC

    OMO.#: OMO-APT30GP60BC-1190

    신규 및 오리지널
    APT30GP60BDQ2

    Mfr.#: APT30GP60BDQ2

    OMO.#: OMO-APT30GP60BDQ2-1190

    신규 및 오리지널
    APT30GP60BSC

    Mfr.#: APT30GP60BSC

    OMO.#: OMO-APT30GP60BSC-1190

    신규 및 오리지널
    APT30GP60JDF1

    Mfr.#: APT30GP60JDF1

    OMO.#: OMO-APT30GP60JDF1-1190

    신규 및 오리지널
    APT30GT60BRD2G

    Mfr.#: APT30GT60BRD2G

    OMO.#: OMO-APT30GT60BRD2G-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    3500
    수량 입력:
    APT30GP60JDQ1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    19
    US$25.27
    US$480.13
    25
    US$23.22
    US$580.50
    50
    US$22.52
    US$1 126.00
    100
    US$21.45
    US$2 145.00
    250
    US$19.71
    US$4 927.50
    500
    US$18.16
    US$9 080.00
    시작
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