NTMS4503NR2G

Mfr. #:: NTMS4503NR2G
제조사:: ON Semiconductor
설명:: MOSFET N-CH 28V 9A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NTMS4503NR2G 데이터 시트
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HTML Datasheet:: NTMS4503NR2G Datasheet NTMS4503NR2G Datasheet (P4-P5)
ECAD Model:

제품 속성
속성 값

제조사: 켜짐

제품 카테고리: FET - 단일

Tags: NTMS4503NR2, NTMS4503NR, NTMS4503, NTMS45, NTMS4, NTMS, NTM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMS4503NR2G 설명

***ure Electronics: N-Channel 28 V 8 mOhm 930 mW Surface Mount Power Mosfet - SOIC-8

***emi: Power MOSFET 28V 14A 7 mOhm Single N-Channel SO-8

***ical: Trans MOSFET N-CH 28V 14A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:14A; Drain Source Voltage, Vds:28V; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ure Electronics: N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ

***et Europe: Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R

***emi: N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.

*** Electronics: Trans MOSFET N-CH 30V 11A 8-Pin DSO T/R

***i-Key: MOSFET N-CH 30V 11A 8DSO

***ponent Stockers USA: SMALL SIGNAL FET

***emi: Power MOSFET 30V 23A 6 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 23A 30V 4.6MO

***ical: Trans MOSFET N-CH 30V 14A 8-Pin SO-FL T/R

***r Electronics: Small Signal Field-Effect Transistor, 9.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):4.6mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
NTMS4503NR2G DISTI # NTMS4503NR2GOSTR-ND	ON Semiconductor	MOSFET N-CH 28V 9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NTMS4503NR2G DISTI # NTMS4503NR2GOSCT-ND	ON Semiconductor	MOSFET N-CH 28V 9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NTMS4503NR2G DISTI # 863-NTMS4503NR2G	ON Semiconductor	MOSFET 28V 14A N-Channel RoHS: Compliant	0
NTMS4503NR2 DISTI # 863-NTMS4503NR2	ON Semiconductor	MOSFET 28V 14A N-Channel RoHS: Not compliant	0
NTMS4503NR2G	ON Semiconductor	RoHS: Not Compliant	129	1000:$0.4300 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5300

영상	부분 #	설명
	Mfr.#: NTMS4503NSR2G OMO.#: OMO-NTMS4503NSR2G	MOSFET NFET S08 28V 14A 7MOHM
	Mfr.#: NTMS4503NR2 OMO.#: OMO-NTMS4503NR2	MOSFET 28V 14A N-Channel
	Mfr.#: NTMS4502NR2G OMO.#: OMO-NTMS4502NR2G-1190	신규 및 오리지널
	Mfr.#: NTMS4503N OMO.#: OMO-NTMS4503N-1190	신규 및 오리지널
	Mfr.#: NTMS4503NR OMO.#: OMO-NTMS4503NR-1190	신규 및 오리지널
	Mfr.#: NTMS4503NR2 OMO.#: OMO-NTMS4503NR2-ON-SEMICONDUCTOR	MOSFET N-CH 28V 9A 8-SOIC
	Mfr.#: NTMS4503NR2G OMO.#: OMO-NTMS4503NR2G-ON-SEMICONDUCTOR	MOSFET N-CH 28V 9A 8-SOIC
	Mfr.#: NTMS4503NR2G-001 OMO.#: OMO-NTMS4503NR2G-001-1190	신규 및 오리지널
	Mfr.#: NTMS4503NRZ OMO.#: OMO-NTMS4503NRZ-1190	신규 및 오리지널
	Mfr.#: NTMS4503NSR2G OMO.#: OMO-NTMS4503NSR2G-ON-SEMICONDUCTOR	MOSFET N-CH 28V 14A 8SO

NTMS4503NR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes