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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSP613PL6327HUSA1 DISTI # BSP613PL6327HUSA1TR-ND | Infineon Technologies AG | MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP613PL6327HUSA1 DISTI # BSP613PL6327HUSA1CT-ND | Infineon Technologies AG | MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP613PL6327HUSA1 DISTI # BSP613PL6327HUSA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP613P L6327 DISTI # 726-BSP613PL6327 | Infineon Technologies AG | MOSFET P-Ch -60V 2.9A SOT-223-3 RoHS: Compliant | 0 | |
| BSP613PL6327 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 15 |
|
| BSP613PL6327 | Siemens | 2.9 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 240 |
|
| BSP613PL6327 | Infineon Technologies AG | 2.9 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 160 |
|
| BSP613PL6327HUSA1 | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 60V, 0.13OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 500 | |
| BSP613PL6327 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1000 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSP613P H6327 OMO.#: OMO-BSP613P-H6327 |
MOSFET P-Ch -60V -2.9A SOT-223-3 |
|
|
Mfr.#: BSP613PH6327XTSA1 OMO.#: OMO-BSP613PH6327XTSA1 |
MOSFET P-Ch -60V -2.9A SOT-223-3 |
|
Mfr.#: BSP613P |
MOSFET P-CH 60V 2.9A SOT-223 |
|
Mfr.#: BSP613P E6327 OMO.#: OMO-BSP613P-E6327-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP613P H6327 OMO.#: OMO-BSP613P-H6327-1190 |
MOSFET P-Ch -60V -2.9A SOT-223-3 |
|
|
Mfr.#: BSP613P H6327XTSA OMO.#: OMO-BSP613P-H6327XTSA-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP613P L6327 OMO.#: OMO-BSP613P-L6327-1190 |
MOSFET P-Ch -60V 2.9A SOT-223-3 |
|
|
Mfr.#: BSP613PH6327 OMO.#: OMO-BSP613PH6327-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP613PH6327XTSA1 |
MOSFET P-CH 60V 2.9A SOT-223 |
|
|
Mfr.#: BSP613PE6327 OMO.#: OMO-BSP613PE6327-1190 |
신규 및 오리지널 |
