FCB11N60TM

Mfr. #:: FCB11N60TM
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET HIGH POWER
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FCB11N60TM 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 11 A

Rds On - 드레인 소스 저항:: 380 mOhms

Vgs - 게이트 소스 전압:: 30 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 125 W

구성:: 하나의

채널 모드:: 상승

상표명:: 슈퍼펫

포장:: 릴

키:: 4.83 mm

길이:: 10.67 mm

시리즈:: FCB11N60

트랜지스터 유형:: 1 N-Channel

너비:: 9.65 mm

상표:: 온세미컨덕터 / 페어차일드

가을 시간:: 56 ns

상품 유형:: MOSFET

상승 시간:: 98 ns

공장 팩 수량:: 800

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 119 ns

일반적인 켜기 지연 시간:: 34 ns

단위 무게:: 0.046296 oz

Tags: FCB11N, FCB11, FCB1, FCB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCB11N60TM 설명

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK

*** Source Electronics: MOSFET N-CH 600V 11A D2PAK / Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***ment14 APAC: MOSFET, N CH, 600V, 11A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:33A

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ure Electronics: N-Channel 500 V 11 A 380 mOhm 150 W Surface Mount Power Mosfet - D2PAK

***icroelectronics: N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET

***et: Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 500V, 14A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:D2-PAK; Power Dissipation Pd:150W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET

***ure Electronics: N-Channel 550 V 0.35 Ohm Surface Mount MDmesh MosFet - D2PAK

***et: Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R

***enic: 550V 12A 160W 350m´Î@10V6A 5V@50Ã×A N Channel TO-263-3(D2PAK) MOSFETs ROHS

***ment14 APAC: MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:550V; On Resistance

***r Electronics: Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -65°C

***icroelectronics: N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Res Thin Film 1206 20K Ohm 0.1% 0.125W(1/8W) ±25ppm/C Molded SMD Paper T/R

***r Electronics: Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 650V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

***(Formerly Allied Electronics): IRFS9N60APBF N-channel MOSFET Transistor; 9.2 A; 600 V; 3-Pin D2PAK

***ure Electronics: Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK

***ure Electronics: IRFS11N50A Series 500 V 7 A 0.52 Ohms Surface Mount Power Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N, 500V, 11A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.52ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Di

***ure Electronics: Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.85Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No

***roFlash: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Market price

부분 #	제조	설명	재고	가격
FCB11N60TM DISTI # V72:2272_06339821	ON Semiconductor	SF1 600V 380MOHM E D2PAK	775	500:$1.4060 250:$1.5404 100:$1.5565 25:$1.9590 10:$1.9980 1:$2.5863
FCB11N60TM DISTI # V36:1790_06339821	ON Semiconductor	SF1 600V 380MOHM E D2PAK	0	800000:$0.9787 400000:$0.9805 80000:$1.0900 8000:$1.2620 800:$1.2900
FCB11N60TM DISTI # FCB11N60TMCT-ND	ON Semiconductor	MOSFET N-CH 600V 11A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	790In Stock	100:$1.8602 10:$2.3140 1:$2.5800
FCB11N60TM DISTI # FCB11N60TMDKR-ND	ON Semiconductor	MOSFET N-CH 600V 11A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	790In Stock	100:$1.8602 10:$2.3140 1:$2.5800
FCB11N60TM DISTI # FCB11N60TMTR-ND	ON Semiconductor	MOSFET N-CH 600V 11A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	5600:$1.1022 2400:$1.1446 1600:$1.2294 800:$1.4838
FCB11N60TM DISTI # 33628371	ON Semiconductor	SF1 600V 380MOHM E D2PAK	775	6:$2.5863
FCB11N60TM DISTI # FCB11N60TM	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FCB11N60TM) Min Qty: 261 Container: Bulk	Americas - 0	2610:$1.0900 261:$1.1900 522:$1.1900 783:$1.1900 1305:$1.1900
FCB11N60TM DISTI # FCB11N60TM	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€0.9359 4800:€1.0029 3200:€1.0799 1600:€1.1699 800:€1.4039
FCB11N60TM DISTI # FCB11N60TM	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB11N60TM) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$0.9959 4800:$1.0219 3200:$1.0349 1600:$1.0479 800:$1.0549
FCB11N60TM DISTI # FCB11N60TM	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0	40000:$1.3238 20000:$1.3458 8000:$1.3922 4000:$1.4420 2400:$1.4954 1600:$1.5529 800:$1.6150
FCB11N60TM DISTI # 31K6744	ON Semiconductor	N CHANNEL MOSFET, 600V, 11A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes	0	9600:$1.1300 2400:$1.1700 800:$1.2800 1:$1.2900
FCB11N60TM DISTI # 512-FCB11N60TM	ON Semiconductor	MOSFET HIGH POWER RoHS: Compliant	1100	1:$2.3700 10:$2.0100 100:$1.6100 500:$1.4100 800:$1.1700 2400:$1.1600
FCB11N60TM	ON Semiconductor	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	7	1000:$1.1800 500:$1.2500 100:$1.3000 25:$1.3500 1:$1.4600
FCB11N60TM DISTI # 6710337P	ON Semiconductor	MOSFET N-CHANNEL 600V 11A D2PAK, RL	2233	200:£1.5800 100:£1.6300 50:£1.7300 10:£1.9000
FCB11N60TM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	800

관련 상품

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	Mfr.#: CRCW08051M00FKEAC OMO.#: OMO-CRCW08051M00FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 1M0 1% ET1
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유효성

재고:: Available
주문 시:: 1984
수량 입력:

FCB11N60TM의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$2.37~~; ~~US$2.37~~

10: ~~US$2.01~~; ~~US$20.10~~

100: ~~US$1.61~~; ~~US$161.00~~

500: ~~US$1.41~~; ~~US$705.00~~

시작

FCB11N 6
FCB11 9
FCB1 27
FCB 654

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FCB11N60TM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes