OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

VN2410L-G-P013

VN2410L-G-P013
Mfr. #:
VN2410L-G-P013
제조사:
Microchip Technology
설명:
MOSFET N-CH Enhancmnt Mode MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
VN2410L-G-P013 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
VN2410L-G-P013 추가 정보 VN2410L-G-P013 Product Details
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-92-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
240 V
Id - 연속 드레인 전류:
190 mA
Rds On - 드레인 소스 저항:
10 Ohms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
1 W
구성:
하나의
채널 모드:
상승
포장:
탄약 팩
제품:
MOSFET 소신호
트랜지스터 유형:
1 N-Channel
상표:
마이크로칩 기술
가을 시간:
24 ns
상품 유형:
MOSFET
상승 시간:
8 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
23 ns
일반적인 켜기 지연 시간:
8 ns
단위 무게:
0.016000 oz
Tags
VN2410L-G, VN2410L, VN241, VN24, VN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R
***roFlash
Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***hard Electronics
Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ark
P CH DMOS FET, -100V, 230mA, TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:230mA; Drain Source Voltage, Vds:-100V; On Resistance, Rds(on):8ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-3.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V
***et Europe
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET
***roFlash
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET P-CH 240V 0.2A Automotive 3-Pin E-Line
***ure Electronics
P-Channel 240 V 1 A 750 mW Vertical DMOS FET - TO-92
***ark
Mosfet Bvdss: 101V~250V Ep3sc T&R 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET P-Channel 240V 0.2A E-Line
***nell
MOSFET, P, LOGIC, E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: -240V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power D
***S
French Electronic Distributor since 1988
***ukat
P-Ch -240V -0,2A 0,75W 9R E-Line
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***icroelectronics
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
***et
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack
*** Electronic Components
MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
***r Electronics
Small Signal Field-Effect Transistor
***el Electronic
CAP CER 2200PF 250V C0G RADIAL
부분 # 제조 설명 재고 가격
VN2410L-G-P013
DISTI # VN2410L-G-P013-ND		Microchip Technology IncMOSFET N-CH 240V 0.19A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)		Temporarily Out of Stock
  • 2000:$0.7416
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncTrans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R - Ammo Pack (Alt: VN2410L-G-P013)
RoHS: Compliant
Min Qty: 2000
Container: Ammo Pack		Americas - 0
  • 2000:$0.5109
  • 4000:$0.4939
  • 8000:$0.4779
  • 12000:$0.4629
  • 20000:$0.4559
VN2410L-G-P013
DISTI # 70483926		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,240V,10 Ohm3 TO-92AMMO
RoHS: Compliant		0
  • 2000:$1.0500
VN2410L-G-P013
DISTI # 689-VN2410L-G-P013		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		894
  • 1:$0.9800
  • 10:$0.9650
  • 25:$0.8140
  • 100:$0.7420
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE240V10 Ohm
RoHS: Compliant		0
  • 1000:$0.6000
  • 100:$0.7200
  • 26:$0.7900
  • 1:$0.9500
영상 부분 # 설명
VN2410L-G-P013

Mfr.#: VN2410L-G-P013

OMO.#: OMO-VN2410L-G-P013

 MOSFET N-CH Enhancmnt Mode MOSFET
VN2410L-G

Mfr.#: VN2410L-G

OMO.#: OMO-VN2410L-G

 MOSFET 240V 10Ohm
VN2410L-AT

Mfr.#: VN2410L-AT

OMO.#: OMO-VN2410L-AT-1190

 신규 및 오리지널
VN2410LS

Mfr.#: VN2410LS

OMO.#: OMO-VN2410LS-1190

 신규 및 오리지널
VN2410LZL1

Mfr.#: VN2410LZL1

OMO.#: OMO-VN2410LZL1-1190

 신규 및 오리지널
VN2410LZL1G

Mfr.#: VN2410LZL1G

OMO.#: OMO-VN2410LZL1G-ON-SEMICONDUCTOR

 MOSFET N-CH 240V 200MA TO-92
VN2410L___G

Mfr.#: VN2410L___G

OMO.#: OMO-VN2410L-G-1190

 신규 및 오리지널
VN2410L

Mfr.#: VN2410L

OMO.#: OMO-VN2410L-1190

 MOSFET 240V 200mA N-Channel
VN2410L-G P005

Mfr.#: VN2410L-G P005

OMO.#: OMO-VN2410L-G-P005-317

 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2410L-G P002

Mfr.#: VN2410L-G P002

OMO.#: OMO-VN2410L-G-P002-317

 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
유효성
재고:
894
주문 시:
2877
수량 입력:
VN2410L-G-P013의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.97
US$0.97
10
US$0.96
US$9.64
25
US$0.81
US$20.33
100
US$0.74
US$74.10
250
US$0.65
US$163.00
500
US$0.56
US$278.00
1000
US$0.51
US$506.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
Top