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IRLML2803TRPBF DatasheetIRLML2803TRPBF Datasheet (P4-P6)IRLML2803TRPBF Datasheet (P7-P9)

IRLML2803TRPBF

Mfr. #:
IRLML2803TRPBF
제조사:
Infineon Technologies
설명:
MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRLML2803TRPBF 데이터 시트
ECAD Model:
재고:
112
주문 시:
2095
수량 입력:
IRLML2803TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
수량
단가
내선 가격
1
US$0.37
US$0.37
10
US$0.28
US$2.83
100
US$0.15
US$15.40
1000
US$0.12
US$115.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SOT-23-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
1.2 A
Rds On - 드레인 소스 저항:
400 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
3.3 nC
Pd - 전력 손실:
540 mW
구성:
하나의
포장:
키:
1.1 mm
길이:
2.9 mm
제품:
MOSFET 소신호
트랜지스터 유형:
1 N-Channel
너비:
1.3 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001572964
단위 무게:
0.000282 oz
Tags
IRLML2803TRP, IRLML2803T, IRLML28, IRLML2, IRLML, IRLM, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-20V
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***essParts.Net
INTERNATIONAL RECTIFIER IRLML2803TRPBF / MOSFET N-CH 30V 1.2A SOT-23 IN
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 540 mW
***fin
Transistor NPN Mos IRLML2803 INTERNATIONAL RECTIFIER Ampere=1.2 V=30 SOt23
***el Electronic
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: DC Switches; Load Switch
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:1.2A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:Micro3 ;RoHS Compliant: Yes
***nell
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.85A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.4W; Power, Pd:0.4W; Quantity, Reel:3000; SMD Marking:1B; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.5V; Width, External:3.05mm; Width, Tape:8mm
*** Electronics
INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.6Ohm;ID -0.76A;Micro3;PD 540mW;VGS +/-20V
*** Source Electronics
Trans MOSFET P-CH Si 30V 0.76A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 760MA SOT-23
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***Yang
Trans MOSFET P-CH 30V 0.76A 3-Pin Micro T/R - Product that comes on tape, but is not reeled
***ure Electronics
Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET® Power Mosfet - SOT-23
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
P Channel Mosfet, -30V, 610Ma, Sot-23; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:610Ma; On Resistance Rds(On):0.6Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET | Target Applications: DC Switches; Load Switch
***emi
P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ
***-Wing Technology
ON SEMICONDUCTOR - FDN352AP - MOSFET Transistor, P Channel, -1.3 A, -30 V, 0.18 ohm, -10 V, -2 V
***enic
30V 1.3A 500mW 180m´Î@10V1.3A 2.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ure Electronics
FDN352AP Series 30 V 1.3 A 180 mOhm Single P-Ch. PowerTrench® MOSFET-SSOT-3
***rchild Semiconductor
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 25 / Fall Time ns = 2 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***ernational Rectifier
-30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
***icontronic
Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, P-CH, -30V, -0.76A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -760mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V
***emi
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ
*** Source Electronics
MOSFET P-CH 30V 0.9A SSOT3 / Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R
***enic
30V 900mA 500mW 300m´Î@10V1A 2.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:900mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS352P; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-2.5V
***rchild Semiconductor
These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
***emi
N-Channel Logic Level PowerTrench® MOSFET 30V, 1.4A, 160mΩ
*** Source Electronics
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.4A SSOT3
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:NDS351AN; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS351AN; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***et
Trans MOSFET N-CH 30V 1.1A 3-Pin TO-236AB T/R
***peria
PMV185XN - 30 V, single N-channel Trench MOSFET
***-Wing Technology
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 1.1A Ta 325mW Ta 1.275W Tc 30V -55C~150C TJ
*** Americas
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
부분 # 제조 설명 재고 가격
IRLML2803TRPBF
DISTI # V36:1790_13889580
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant
24000
  • 3000:$0.0940
IRLML2803TRPBF
DISTI # V72:2272_13889580
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant
2296
  • 1000:$0.1093
  • 500:$0.1185
  • 250:$0.1317
  • 100:$0.1463
  • 25:$0.2420
  • 10:$0.2688
  • 1:$0.3610
IRLML2803TRPBF
DISTI # IRLML2803PBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 1.2A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
66782In Stock
  • 1000:$0.1110
  • 500:$0.1443
  • 100:$0.2443
  • 10:$0.3720
  • 1:$0.5300
IRLML2803TRPBF
DISTI # IRLML2803PBFDKR-ND
Infineon Technologies AGMOSFET N-CH 30V 1.2A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
66782In Stock
  • 1000:$0.1110
  • 500:$0.1443
  • 100:$0.2443
  • 10:$0.3720
  • 1:$0.5300
IRLML2803TRPBF
DISTI # IRLML2803PBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 1.2A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
66000In Stock
  • 3000:$0.0970
IRLML2803TRPBF
DISTI # 31273826
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant
21000
  • 3000:$0.0940
IRLML2803TRPBF
DISTI # 31261803
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant
2296
  • 1000:$0.1093
  • 500:$0.1185
  • 250:$0.1317
  • 100:$0.1463
  • 89:$0.2420
IRLML2803TRPBF
DISTI # IRLML2803TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R - Cut TR (SOS) (Alt: IRLML2803TRPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape
Americas - 27
  • 1:$0.2689
  • 30:$0.2219
  • 75:$0.1629
  • 150:$0.1339
  • 375:$0.1329
  • 750:$0.1179
  • 1500:$0.1069
IRLML2803TRPBF
DISTI # IRLML2803TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R (Alt: IRLML2803TRPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 3000
  • 3000:$0.0766
  • 6000:$0.0734
  • 9000:$0.0725
  • 15000:$0.0696
  • 30000:$0.0687
  • 75000:$0.0670
  • 150000:$0.0654
IRLML2803TRPBF
DISTI # SP001572964
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R (Alt: SP001572964)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 165985
  • 3000:€0.0769
  • 6000:€0.0749
  • 12000:€0.0729
  • 18000:€0.0729
  • 30000:€0.0729
IRLML2803TRPBF
DISTI # IRLML2803TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML2803TRPBF)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.0899
  • 6000:$0.0869
  • 12000:$0.0829
  • 18000:$0.0809
  • 30000:$0.0789
IRLML2803TRPBF-1
DISTI # IRLML2803TRPBF-1
Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R (Alt: IRLML2803TRPBF-1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    IRLML2803TRPBF-1
    DISTI # IRLML2803TRPBF-1
    Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRLML2803TRPBF-1)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
      IRLML2803TRPBF
      DISTI # 97K2352
      Infineon Technologies AGN CHANNEL MOSFET, 30V, 1.2A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:850mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes202
      • 1:$0.5830
      • 10:$0.4090
      • 25:$0.3620
      • 50:$0.3160
      • 100:$0.2680
      • 250:$0.2130
      • 500:$0.1580
      • 1000:$0.1220
      IRLML2803TRPBF.
      DISTI # 26AC0679
      Infineon Technologies AGN CHANNEL MOSFET, 30V, 1.2A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:850mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes0
      • 1:$0.0960
      • 6000:$0.0930
      • 12000:$0.0890
      • 18000:$0.0860
      • 30000:$0.0820
      • 60000:$0.0790
      IRLML2803TRPBF
      DISTI # 70017105
      Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 0.25Ohm,ID 1.2A,Micro3,PD 540mW,VGS +/-20V
      RoHS: Compliant
      3010
      • 1:$0.2400
      • 10:$0.2100
      • 100:$0.1800
      • 500:$0.1600
      • 1000:$0.1400
      IRLML2803TRPBFInfineon Technologies AGSingle N-Channel 30 V 0.4 Ohm 5 nC HEXFET Power Mosfet - MICRO-3
      RoHS: Compliant
      5335Cut Tape/Mini-Reel
      • 1:$0.1150
      • 250:$0.1010
      • 500:$0.0990
      • 750:$0.0980
      • 1500:$0.0950
      IRLML2803TRPBFInfineon Technologies AGSingle N-Channel 30 V 0.4 Ohm 5 nC HEXFET Power Mosfet - MICRO-3
      RoHS: Compliant
      303000Reel
      • 3000:$0.0851
      • 6000:$0.0806
      • 12000:$0.0787
      IRLML2803TRPBFInternational RectifierSmall Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
      RoHS: Compliant
      374
      • 500:$0.0800
      • 1000:$0.0800
      • 25:$0.0900
      • 100:$0.0900
      • 1:$0.1000
      IRLML2803TRPBF
      DISTI # 942-IRLML2803TRPBF
      Infineon Technologies AGMOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl
      RoHS: Compliant
      28324
      • 1:$0.3800
      • 10:$0.2830
      • 100:$0.1540
      • 1000:$0.1150
      • 3000:$0.0990
      IRLML2803TRPBFIandR1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB11
      • 10:$0.4480
      • 1:$0.5600
      IRLML2803TRPBFInternational Rectifier1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB2146
      • 1539:$0.4550
      • 309:$0.5200
      • 1:$1.3000
      IRLML2803TRPBFInternational Rectifier1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB61
      • 19:$0.8250
      • 5:$1.1000
      • 1:$1.3750
      IRLML2803TRPBFInternational Rectifier1200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB14
      • 3:$1.6800
      • 1:$2.2400
      IRLML2803TRPBFInternational Rectifier 205
        IRLML2803TRPBFInternational Rectifier 4531
          IRLML2803TRPBF
          DISTI # 302022P
          Infineon Technologies AGMOSFET N-CHANNEL 30V 1.2A SOT23, RL28595
          • 50:£0.2100
          • 150:£0.1160
          • 750:£0.1020
          • 1500:£0.0880
          IRLML2803TRPBF
          DISTI # 302022
          Infineon Technologies AGMOSFET N-CHANNEL 30V 1.2A SOT23, PK2150
          • 5:£0.4000
          • 50:£0.2100
          • 150:£0.1160
          • 750:£0.1020
          • 1500:£0.0880
          IRLML2803TRPBF
          DISTI # IRLML2803TRPBF
          Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,1.2A,0.4W,SOT2311958
          • 5:$0.1569
          • 25:$0.1171
          • 100:$0.0957
          • 500:$0.0823
          • 3000:$0.0754
          IRLML2803TRPBF
          DISTI # TMOSS6807
          Infineon Technologies AGN-CH 30V 1.2A 250mOhm Micro3
          RoHS: Compliant
          Stock DE - 0Stock US - 0
          • 3000:$0.1125
          • 6000:$0.1061
          • 12000:$0.0997
          • 18000:$0.0900
          • 36000:$0.0868
          IRLML2803TRPBF
          DISTI # IRLML2803PBF
          Infineon Technologies AGN-LogL 30V 1,2A 0,54W 0,25R SOT23
          RoHS: Compliant
          103900
          • 100:€0.1265
          • 500:€0.0865
          • 3000:€0.0765
          • 6000:€0.0735
          IRLML2803TRPBFInternational Rectifier 
          RoHS: Compliant
          Europe - 2695
            IRLML2803TRPBFInternational RectifierINSTOCK3050
              IRLML2803TRPBFInfineon Technologies AGINSTOCK4410
                IRLML2803TRPBFInternational RectifierINSTOCK5033
                  IRLML2803TRPBF
                  DISTI # 9102701
                  Infineon Technologies AGMOSFET, N, LOGIC, SOT-23
                  RoHS: Compliant
                  1919
                  • 5:£0.2420
                  • 25:£0.2160
                  • 100:£0.1190
                  • 250:£0.1150
                  • 500:£0.1050
                  IRLML2803TRPBF
                  DISTI # C1S327400100357
                  Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
                  RoHS: Compliant
                  5560
                  • 100:$0.1370
                  • 50:$0.1670
                  • 25:$0.2060
                  IRLML2803TRPBF
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                  Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
                  RoHS: Compliant
                  2296
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                  • 100:$0.1463
                  • 25:$0.2420
                  IRLML2803TRPBF
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                  Infineon Technologies AGTrans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
                  RoHS: Compliant
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                  • 6000:$0.1060
                  • 3000:$0.1150
                  IRLML2803TRPBFInfineon Technologies AG30V,250m,1.2A,N-Channel Power MOSFET4800
                  • 1:$0.1300
                  • 100:$0.1100
                  • 500:$0.1000
                  • 1000:$0.1000
                  IRLML2803TRPBF
                  DISTI # 9102701RL
                  Infineon Technologies AGMOSFET, N, LOGIC, SOT-23
                  RoHS: Compliant
                  0
                  • 1:$0.8400
                  • 10:$0.5900
                  • 100:$0.3870
                  • 500:$0.2290
                  • 1000:$0.1760
                  IRLML2803TRPBF
                  DISTI # 1562522
                  Infineon Technologies AGMOSFET, N REEL 3K
                  RoHS: Compliant
                  0
                  • 1:$494.3500
                  IRLML2803TRPBF
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                  Infineon Technologies AGMOSFET, N, LOGIC, SOT-23
                  RoHS: Compliant
                  8509
                  • 1:$0.8400
                  • 10:$0.5900
                  • 100:$0.3870
                  • 500:$0.2290
                  • 1000:$0.1760
                  IRLML2803TRPBF.
                  DISTI # 9537678
                  Infineon Technologies AG 
                  RoHS: Compliant
                  6620
                  • 1:$0.6020
                  • 10:$0.4480
                  • 100:$0.2440
                  • 1000:$0.1820
                  • 3000:$0.1570
                  IRLML2803TRPBF
                  DISTI # XSKDRABV0030632
                  INF 
                  RoHS: Compliant
                  59029
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                  • 59029:$0.1053
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                  DISTI # XSFP00000002732
                  Infineon Technologies AG 
                  RoHS: Compliant
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                  • 229718:$0.2091
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                  • 10:$0.6700
                  • 50:$0.4500
                  • 100:$0.3400
                  • 500:$0.2900
                  • 1000:$0.2600
                  영상 부분 # 설명
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                  Mfr.#: AD9826KRSZ

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                  OMO.#: OMO-IRLML6302TRPBF

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                  Mfr.#: ATMEGA328P-AU

                  OMO.#: OMO-ATMEGA328P-AU

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                  Mfr.#: GRM21BR61E106KA73L

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                  Mfr.#: MLZ2012M4R7WT000

                  OMO.#: OMO-MLZ2012M4R7WT000

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                  Mfr.#: ERJ-6GEYJ104V

                  OMO.#: OMO-ERJ-6GEYJ104V

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                  OMO.#: OMO-IRLML5103TRPBF-INFINEON-TECHNOLOGIES

                  신규 및 오리지널
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