SIZ300DT-T1-GE3

Mfr. #:: SIZ300DT-T1-GE3
제조사:: Vishay
설명:: MOSFET 2N-CH 30V 11A POWERPAIR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIZ300DT-T1-GE3 데이터 시트
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추가 정보:: SIZ300DT-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIZ300DT-GE3

장착 스타일: SMD/SMT

패키지 케이스: 8-PowerWDFN

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-PowerPairR

구성: 듀얼

FET형: 2 N-Channel (Half Bridge)

파워맥스: 16.7W, 31W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 400pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 11A, 28A

Rds-On-Max-Id-Vgs: 24 mOhm @ 9.8A, 10V

Vgs-th-Max-Id: 2.4V @ 250μA

Gate-Charge-Qg-Vgs: 12nC @ 10V

Pd 전력 손실: 3.7 W 4.2 W

가을철: 10 ns 40 ns

상승 시간: 45 ns 80 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 9.8 A

Vds-드레인-소스-고장-전압: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.4 V

Rds-On-Drain-Source-Resistance: 20 mOhms 9 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 7.4 nC 14.2 nC

순방향 트랜스컨덕턴스-최소: 30 S

Tags: SIZ30, SiZ3, SiZ

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ300DT-T1-GE3 설명

***ical: Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R

***et: Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR T/R

***nell: MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8

***i-Key: MOSFET 2N-CH 30V 11A POWERPAIR

***: DUAL N-CHANNEL 30-V (D-S)

***ark: MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:16.7W; Operating Temperature Range:-55°C to +150°C; No. of Pins:8; Continuous Drain Current Id, N Channel:11A;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:16.7W

SIZ300DT-T1-GE3 추가 정보

Dual N-Channel TrenchFET® Power MOSFETs: Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More

Market price

부분 #	제조	설명	재고	가격
SIZ300DT-T1-GE3 DISTI # V72:2272_09216119	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R RoHS: Compliant	1916	1000:$0.4758 500:$0.5568 250:$0.6273 100:$0.6290 25:$0.7704 10:$0.7734 1:$0.8968
SIZ300DT-T1-GE3 DISTI # SIZ300DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 11A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	284In Stock	1000:$0.5506 500:$0.6975 100:$0.8994 10:$1.1380 1:$1.2800
SIZ300DT-T1-GE3 DISTI # SIZ300DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 11A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	284In Stock	1000:$0.5506 500:$0.6975 100:$0.8994 10:$1.1380 1:$1.2800
SIZ300DT-T1-GE3 DISTI # SIZ300DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 11A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4990
SIZ300DT-T1-GE3 DISTI # 27088796	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R RoHS: Compliant	1916	1000:$0.4758 500:$0.5568 250:$0.6273 100:$0.6290 25:$0.7704 16:$0.7734
SIZ300DT-T1-GE3 DISTI # SIZ300DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ300DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4709 6000:$0.4569 12000:$0.4389 18000:$0.4259 30000:$0.4149
SIZ300DT-T1-GE3 DISTI # 91T5908	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 11A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$1.1400 25:$0.9340 50:$0.8260 100:$0.7170 250:$0.6670 500:$0.6160 1000:$0.5410
SIZ300DT-T1-GE3 DISTI # 91T5909	Vishay Intertechnologies	MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.5580 1000:$0.5350 2000:$0.4860 4000:$0.4380 6000:$0.4220 10000:$0.4120
SIZ300DT-T1-GE3 DISTI # 781-SIZ300DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V RoHS: Compliant	2946	1:$1.1400 10:$0.9340 100:$0.7170 500:$0.6160 1000:$0.5410 3000:$0.5400
SIZ300DT-T1-GE3	Vishay Siliconix		1286
SIZ300DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V RoHS: Compliant	Americas -
SIZ300DT-T1-GE3 DISTI # C1S803603830999	Vishay Intertechnologies	MOSFETs	1916	250:$0.6273 100:$0.6290 25:$0.7704 10:$0.7734

영상	부분 #	설명
	Mfr.#: SIZ300DT-T1-GE3 OMO.#: OMO-SIZ300DT-T1-GE3	MOSFET RECOMMENDED ALT 78-SIZ342DT-T1-GE3
	Mfr.#: SIZ300DT (Z300) OMO.#: OMO-SIZ300DT-Z300--1190	신규 및 오리지널
	Mfr.#: SIZ300DT-T1-GE3 OMO.#: OMO-SIZ300DT-T1-GE3-VISHAY	MOSFET 2N-CH 30V 11A POWERPAIR
	Mfr.#: SIZ300DT-TI-GE3 OMO.#: OMO-SIZ300DT-TI-GE3-1190	신규 및 오리지널

SIZ300DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes