IGW30N65L5XKSA1

IGW30N65L5XKSA1
Mfr. #:
IGW30N65L5XKSA1
제조사:
Infineon Technologies
설명:
IGBT Transistors 650V IGBT Trenchstop 5
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IGW30N65L5XKSA1 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
IGW30N65L5XKSA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
IGBT - 싱글
시리즈
TrenchStop 5
포장
튜브
부분 별칭
IGW30N65L5 SP001174472
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
PG-TO247-3
구성
하나의
파워맥스
227W
역복구-시간-trr
-
전류 수집기 Ic-Max
85A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT형
-
전류 수집기 펄스 Icm
120A
Vce-on-Max-Vge-Ic
1.35V @ 15V, 30A
스위칭 에너지
470μJ (on), 1.35mJ (off)
게이트 차지
168nC
Td-on-off-25°C
33ns/308ns
시험조건
400V, 30A, 10 Ohm, 15V
Pd 전력 손실
227 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 40 C
컬렉터-이미터-전압-VCEO-최대
650 V
컬렉터-이미터-포화-전압
1.05 V
연속 수집기 전류 at-25-C
85 A
게이트 이미 터 누설 전류
100 nA
최대 게이트 이미 터 전압
20 V
Tags
IGW30N6, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
부분 # 제조 설명 재고 가격
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1IN-ND
Infineon Technologies AGIGBT 650V 30A TRENCHSTOP TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1200:$2.7254
  • 720:$3.1736
  • 240:$3.6735
  • 10:$4.4150
  • 1:$4.8800
IGW30N65L5XKSA1
DISTI # SP001174472
Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001174472)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 240
  • 1:€2.2900
  • 10:€2.0900
  • 25:€1.9900
  • 50:€1.8900
  • 100:€1.8900
  • 500:€1.7900
  • 1000:€1.6900
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N65L5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$2.2900
  • 480:$2.1900
  • 960:$2.0900
  • 1440:$2.0900
  • 2400:$1.9900
IGW30N65L5XKSA1
DISTI # 12AC9665
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes1192
  • 500:$3.1500
  • 250:$3.4700
  • 100:$3.6400
  • 50:$3.8100
  • 25:$3.9800
  • 10:$4.1500
  • 1:$4.8100
IGW30N65L5XKSA1
DISTI # 726-IGW30N65L5XKSA1
Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant
0
  • 1:$4.3400
  • 10:$3.6900
  • 100:$3.2000
  • 250:$3.0300
  • 500:$2.7200
IGW30N65L5XKSA1
DISTI # XSKDRABS0023696
Infineon Technologies AG 
RoHS: Compliant
720
  • 720:$2.7800
  • 240:$2.9800
IGW30N65L5XKSA1
DISTI # 2709992
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant
1190
  • 100:£2.9400
  • 10:£3.3800
  • 1:£3.9800
IGW30N65L5XKSA1
DISTI # 2709992
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant
1192
  • 1200:$3.8500
  • 720:$4.5700
  • 240:$5.3600
  • 10:$6.5400
  • 1:$7.2900
영상 부분 # 설명
IGW30N65L5XKSA1

Mfr.#: IGW30N65L5XKSA1

OMO.#: OMO-IGW30N65L5XKSA1

IGBT Transistors 650V IGBT Trenchstop 5
IGW30N60TPXKSA1

Mfr.#: IGW30N60TPXKSA1

OMO.#: OMO-IGW30N60TPXKSA1-INFINEON-TECHNOLOGIES

IGBT 600V 53A TO247-3
IGW30N60

Mfr.#: IGW30N60

OMO.#: OMO-IGW30N60-1190

신규 및 오리지널
IGW30N60H3  G30H603

Mfr.#: IGW30N60H3 G30H603

OMO.#: OMO-IGW30N60H3-G30H603-1190

신규 및 오리지널
IGW30N60H3 , 2SC5182

Mfr.#: IGW30N60H3 , 2SC5182

OMO.#: OMO-IGW30N60H3-2SC5182-1190

신규 및 오리지널
IGW30N60H3FKSA1

Mfr.#: IGW30N60H3FKSA1

OMO.#: OMO-IGW30N60H3FKSA1-INFINEON-TECHNOLOGIES

IGBT 600V 60A 187W TO247-3
IGW30N60TFKSA1

Mfr.#: IGW30N60TFKSA1

OMO.#: OMO-IGW30N60TFKSA1-INFINEON-TECHNOLOGIES

IGBT 600V 60A 187W TO247-3
IGW30N60TS

Mfr.#: IGW30N60TS

OMO.#: OMO-IGW30N60TS-1190

신규 및 오리지널
IGW30N60TXK

Mfr.#: IGW30N60TXK

OMO.#: OMO-IGW30N60TXK-1190

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW30N60TFKSA1)
IGW30N60H3

Mfr.#: IGW30N60H3

OMO.#: OMO-IGW30N60H3-126

IGBT Transistors 600V HI SPEED SW IGBT
유효성
재고:
Available
주문 시:
4000
수량 입력:
IGW30N65L5XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.98
US$2.98
10
US$2.84
US$28.36
100
US$2.69
US$268.65
500
US$2.54
US$1 268.65
1000
US$2.39
US$2 388.00
시작
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