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IXYN82N120C3H1

IXYN82N120C3H1
Mfr. #:
IXYN82N120C3H1
제조사:
Littelfuse
설명:
IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXYN82N120C3H1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN82N120C3H1 DatasheetIXYN82N120C3H1 Datasheet (P4-P6)IXYN82N120C3H1 Datasheet (P7)
ECAD Model:
추가 정보:
IXYN82N120C3H1 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
SOT-227B-4
장착 스타일:
SMD/SMT
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2.75 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
105 A
Pd - 전력 손실:
500 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
IXYN82N120
포장:
튜브
연속 수집가 현재 IC 최대:
105 A
상표:
익시스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
10
하위 카테고리:
IGBT
상표명:
XPT
단위 무게:
1.058219 oz
Tags
IXYN8, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
***ical
Trans IGBT Chip N-CH 1200V 105A 500000mW Automotive 4-Pin SOT-227B
***i-Key
IGBT MODULE 1200V 105A SOT227B
***ark
Igbt, N-Ch, 1.2Kv, 105A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:105A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, N-CH, 1.2KV, 105A, SOT-227B; Transistor Polarity:N Channel; DC Collector Current:105A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SOT-227B; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:XPT GenX3 Series; SVHC:No SVHC (12-Jan-2017)
***nell
IGBT, CA-N, 1,2KV, 105A, SOT-227B; Polarità Transistor:Canale N; Corrente di Collettore CC:105A; Tensione Saturaz Collettore-Emettitore Vce(on):3.2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:SOT-227B; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:XPT GenX3 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXYN82N120C3H1
DISTI # 23829664		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 105A 4-Pin SOT-227B
RoHS: Compliant		220
  • 10:$29.5733
IXYN82N120C3H1
DISTI # IXYN82N120C3H1-ND		IXYS CorporationIGBT MODULE 1200V 105A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		136In Stock
  • 250:$27.5500
  • 100:$30.0200
  • 30:$32.3000
  • 10:$35.1500
  • 1:$38.0000
IXYN82N120C3H1
DISTI # 747-IXYN82N120C3H1		IXYS CorporationIGBT Transistors XPT IGBT C3-Class 1200V/105A,Copack
RoHS: Compliant		37
  • 1:$38.0000
  • 5:$36.1000
  • 10:$35.1500
  • 25:$32.3000
  • 50:$31.5200
  • 100:$30.0200
  • 200:$27.5500
IXYN82N120C3H1IXYS CorporationGenX3 XPT IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
RoHS: Compliant		370Tube
  • 1:$28.1600
  • 2:$26.7700
  • 5:$25.0200
  • 10:$23.7800
  • 25:$21.1200
IXYN82N120C3H1
DISTI # 8047622		IXYS CorporationIGBT 1200V 105A XPT GENX3 DIODE SOT227B, EA3
  • 1:£27.4900
  • 2:£27.3600
  • 5:£27.2200
  • 10:£24.4600
  • 30:£23.3600
IXYN82N120C3H1
DISTI # 2674802		IXYS CorporationIGBT, N-CH, 1.2KV, 105A, SOT-227B
RoHS: Compliant		0
  • 1:£28.7500
  • 5:£27.3100
  • 10:£24.4400
  • 50:£23.8400
  • 100:£20.8400
IXYN82N120C3H1
DISTI # XSFT00000023520		IXYS CorporationGENX3 XPT IGBT 1200 V 105 A CHASSIS MOUNTHIGH-SPEED IGBT - SOT-227B
RoHS: Compliant		280
  • 10:$35.6400
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유효성
재고:
Available
주문 시:
4000
수량 입력:
IXYN82N120C3H1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$38.00
US$38.00
5
US$36.10
US$180.50
10
US$35.15
US$351.50
25
US$32.30
US$807.50
50
US$31.52
US$1 576.00
100
US$30.02
US$3 002.00
200
US$27.55
US$5 510.00
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