SIR404DP-T1-GE3

Mfr. #:: SIR404DP-T1-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 20V 60A 104W 1.6mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIR404DP-T1-GE3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

시리즈: SIRxxxDP

포장: 릴

부분 별칭: SIR404DP-GE3

단위 무게: 0.017870 oz

장착 스타일: SMD/SMT

패키지 케이스: SO-PowerPAK-8

기술: 시

채널 수: 1 Channel

구성: 싱글 쿼드 드레인 트리플 소스

트랜지스터형: 1 N-Channel

Pd 전력 손실: 6.25 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 26 ns

상승 시간: 20 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 45.6 A

Vds-드레인-소스-고장-전압: 20 V

Rds-On-Drain-Source-Resistance: 1.6 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 123 ns

일반 켜기 지연 시간: 35 ns

채널 모드: 상승

Tags: SIR404, SIR40, SIR4, SIR

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Quality Guarantees

We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR404DP-T1-GE3 설명

*** Source Electronics: Trans MOSFET N-CH 20V 60A 8-Pin PowerPAK SO T/R / MOSFET N-CH 20V 60A PPAK SO-8

***ure Electronics: Single N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:45.6A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
SIR404DP-T1-GE3 DISTI # V72:2272_09215728	Vishay Intertechnologies	Trans MOSFET N-CH 20V 45.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	2855	1000:$0.8483 500:$1.0026 250:$1.1262 100:$1.1384 25:$1.4058 10:$1.4221 1:$1.6516
SIR404DP-T1-GE3 DISTI # SIR404DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7964In Stock	1000:$1.0678 500:$1.2888 100:$1.6570 10:$2.0620 1:$2.2800
SIR404DP-T1-GE3 DISTI # SIR404DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7964In Stock	1000:$1.0678 500:$1.2888 100:$1.6570 10:$2.0620 1:$2.2800
SIR404DP-T1-GE3 DISTI # SIR404DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.9653
SIR404DP-T1-GE3 DISTI # 27527362	Vishay Intertechnologies	Trans MOSFET N-CH 20V 45.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	2855	1000:$0.8483 500:$1.0026 250:$1.1262 100:$1.1384 25:$1.4058 10:$1.4221 8:$1.6516
SIR404DP-T1-GE3 DISTI # SIR404DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 45.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR404DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.9459 6000:$0.9179 12000:$0.8799 18000:$0.8559 30000:$0.8329
SIR404DP-T1-GE3 DISTI # 15R4877	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET	0	1:$0.9650 3000:$0.9650
SIR404DP-T1-GE3. DISTI # 26AC3304	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:45.6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power Dissipation Pd:104W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.9650 3000:$0.9650
SIR404DP-T1-GE3 DISTI # 781-SIR404DP-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant	20631	1:$2.0200 10:$1.6800 100:$1.3000 500:$1.1400 1000:$0.9430 3000:$0.8780 6000:$0.8460 9000:$0.8450
SIR404DP-T1-GE3 DISTI # C1S803601532880	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2855	250:$1.1262 100:$1.1384 25:$1.4058 10:$1.4221

영상	부분 #	설명
	Mfr.#: SIR404DP-T1-GE3 OMO.#: OMO-SIR404DP-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK SO-8
	Mfr.#: SIR404DP-T1-GE3 OMO.#: OMO-SIR404DP-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 60A 104W 1.6mohm @ 10V
	Mfr.#: SIR404DP OMO.#: OMO-SIR404DP-1190	신규 및 오리지널
	Mfr.#: SIR404DP-T1-E3 OMO.#: OMO-SIR404DP-T1-E3-1190	신규 및 오리지널

SIR404DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes