MUN5113T3G

Mfr. #:: MUN5113T3G
제조사:: ON Semiconductor
설명:: Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MUN5113T3G 데이터 시트
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HTML Datasheet:: MUN5113T3G Datasheet MUN5113T3G Datasheet (P4-P6)MUN5113T3G Datasheet (P7-P9)MUN5113T3G Datasheet (P10-P12)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - 사전 바이어스

RoHS:: Y

구성:: 하나의

트랜지스터 극성:: PNP

일반적인 입력 저항:: 47 kOhms

일반적인 저항 비율:: 1

장착 스타일:: SMD/SMT

패키지/케이스:: SC-70-3

DC 수집기/기본 이득 hfe 최소:: 80

컬렉터-이미터 전압 VCEO 최대:: 50 V

지속적인 수집가 전류:: 0.1 A

피크 DC 수집기 전류:: 100 mA

Pd - 전력 손실:: 202 mW

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: MUN5113

포장:: 릴

DC 전류 이득 hFE 최대:: 80

키:: 0.85 mm

길이:: 2.1 mm

너비:: 1.24 mm

상표:: 온세미컨덕터

상품 유형:: BJT - 양극성 트랜지스터 - 사전 바이어스

공장 팩 수량:: 10000

하위 카테고리:: 트랜지스터

단위 무게:: 0.000219 oz

Tags: MUN5113T, MUN5113, MUN511, MUN51, MUN5, MUN

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MUN5113T3G 설명

***Semiconductor: PNP Bipolar Digital Transistor (BRT)

***ical: Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SC-70 T/R

***et Europe: Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R

***i-Key: TRANS PREBIAS PNP 202MW SC70-3

***ark: Brt Transistor, 50V, 47K/47Kohm, Sc70; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes

***th Star Micro: This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

Market price

부분 #	제조	설명	재고	가격
MUN5113T3G DISTI # 26735847	ON Semiconductor	Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R RoHS: Compliant	40000	40000:$0.0150
MUN5113T3G DISTI # MUN5113T3G-ND	ON Semiconductor	TRANS PREBIAS PNP 202MW SC70-3 RoHS: Compliant Min Qty: 20000 Container: Tape & Reel (TR)	Temporarily Out of Stock	20000:$0.0214
MUN5113T3G DISTI # MUN5113T3G	ON Semiconductor	Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R (Alt: MUN5113T3G) RoHS: Compliant Min Qty: 10000 Container: Tape and Reel	Europe - 30000	10000:€0.0220 20000:€0.0171 40000:€0.0140 60000:€0.0118 100000:€0.0110
MUN5113T3G DISTI # 26K4674	ON Semiconductor	BRT TRANSISTOR, 50V, 47K/47KOHM, SC70,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:47kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:1(Ratio),No. of Pins:3 PinRoHS Compliant: Yes	0	1:$0.0210
MUN5113T1G DISTI # 863-MUN5113T1G	ON Semiconductor	Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V RoHS: Compliant	31894	1:$0.1600 10:$0.1370 100:$0.0490 1000:$0.0320 3000:$0.0250 9000:$0.0220 24000:$0.0200 45000:$0.0170
MUN5113T3G DISTI # 863-MUN5113T3G	ON Semiconductor	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP RoHS: Compliant	0	1:$0.1500 10:$0.1320 100:$0.0470 1000:$0.0310 2500:$0.0240 10000:$0.0210 20000:$0.0190 50000:$0.0170 100000:$0.0140
MUN5113T3G	ON Semiconductor	RoHS: Not Compliant	150000	100:$0.0100 500:$0.0100 1000:$0.0100 1:$0.0200 25:$0.0200

관련 상품

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